| Semiconductor device and manufacturing method thereof T Okudaira, T Hayashi, H Fujiwara, Y Fujita, K Kobayashi US Patent 7,517,800, 2009 | 233 | 2009 |
| Dielectric Breakdown and Current Conduction of Oxide/Nitride/Oxide Multi‐Layer Structures K Kobayashi, H Miyatake, M Hirayama, T Higaki, H Abe Journal of the Electrochemical Society 139 (6), 1693, 1992 | 77 | 1992 |
| Model for the substrate hole current based on thermionic hole emission from the anode during Fowler–Nordheim electron tunneling in n‐channel metal‐oxide … K Kobayashi, A Teramoto, M Hirayama, Y Fujita Journal of applied physics 77 (7), 3277-3282, 1995 | 60 | 1995 |
| Impact of organic contaminants from the environment on electrical characteristics of thin gate oxides T Ogata, C Ban, A Ueyama, S Muranaka, T Hayashi, K Kobayashi, ... Japanese journal of applied physics 37 (5R), 2468, 1998 | 59 | 1998 |
| Silicon nitride film formation method Y Inaba, K Kobayashi US Patent 5,629,043, 1997 | 48 | 1997 |
| Electron Traps and Excess Current Induced by Hot‐Hole Injection into Thin SiO2 Films K Kobayashi, A Teramoto, Y Matsui, M Hirayama, A Yasuoka, ... Journal of the Electrochemical Society 143 (10), 3377, 1996 | 38* | 1996 |
| Mass Spectrometric and Kinetic Study of Low‐Pressure Chemical Vapor Deposition of Si3 N 4 Thin Films from SiH2Cl2 and NH 3 T Sorita, T Satake, H Adachi, T Ogata, K Kobayashi Journal of the Electrochemical Society 141 (12), 3505, 1994 | 36 | 1994 |
| Non-volatile semiconductor memory device and manufacturing method thereof K Kobayashi US Patent 5,500,816, 1996 | 35 | 1996 |
| Leakage current and paramagnetic defects in SiCN dielectrics for copper diffusion barriers K Kobayashi, H Yokoyama, M Endoh Applied surface science 254 (19), 6222-6225, 2008 | 33 | 2008 |
| Study of oxide breakdown under very low electric field A Teramoto, H Umeda, K Azamawari, K Kobayashi, K Shiga, J Komori, ... 1999 IEEE International Reliability Physics Symposium Proceedings. 37th …, 1999 | 29 | 1999 |
| Excess currents induced by hot-hole injection and FN stress in thin SiO/sub 2/films [flash memories] A Teramoto, K Kobayashi, Y Matsui, M Hirayama, A Yasuoka Proceedings of International Reliability Physics Symposium, 113-116, 1996 | 27 | 1996 |
| Origin of positive charge generated in thin SiO/sub 2/films during high-field electrical stress K Kobayashi, A Teramoto, H Miyoshi IEEE Transactions on Electron Devices 46 (5), 947-953, 1999 | 22 | 1999 |
| Time-dependent dielectric breakdown of SiO2 films in a wide electric field range A Teramoto, H Umeda, K Azamawari, K Kobayashi, K Shiga, J Komori, ... Microelectronics Reliability 41 (1), 47-52, 2001 | 20 | 2001 |
| Stress-induced current in nitride and oxidized nitride thin films MK Mazumder, K Kobayashi, J Mitsuhashi, H Koyama IEEE transactions on electron devices 41 (12), 2417-2422, 1994 | 18 | 1994 |
| Capacitor in semiconductor device K Kobayashi US Patent 5,017,982, 1991 | 17 | 1991 |
| Process for manufacturing stacked semiconductor devices K Kobayashi, T Nishimura, H Morita, S Nakao, H Oda, Y Inoue US Patent 4,987,092, 1991 | 17 | 1991 |
| Semiconductor memory device H Arima, K Kobayashi US Patent 4,866,493, 1989 | 17 | 1989 |
| Thermal annealing effect on ultraviolet-light-induced leakage current in low-pressure chemical vapor deposited silicon nitride films K Kobayashi, A Suzuki, K Ishikawa Thin Solid Films 550, 545-553, 2014 | 16 | 2014 |
| Excess currents induced by hot hole injection and FN electron injection in thin SiO/sub 2/films A Teramoto, K Kobayashi, Y Ohno, A Shigetomi IEEE Transactions on Electron Devices 48 (5), 868-873, 2001 | 15 | 2001 |
| Angle resolved X-ray photoelectron spectroscopic study of ultrathin oxynitrides K Kawase, J Tanimura, H Kurokawa, K Kobayashi, A Teramoto, T Ogata, ... Materials Science in Semiconductor Processing 2 (3), 225-231, 1999 | 15 | 1999 |
