Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect T Takeuchi, C Wetzel, S Yamaguchi, H Sakai, H Amano, I Akasaki, ...
Applied physics letters 73 (12), 1691-1693, 1998
827 1998 Micropump and sample-injector for integrated chemical analyzing systems S Shoji, S Nakagawa, M Esashi
Sensors and Actuators A: Physical 21 (1-3), 189-192, 1990
212 1990 Widely tunable electroabsorption-modulated sampled-grating DBR laser transmitter YA Akulova, GA Fish, PC Koh, CL Schow, P Kozodoy, AP Dahl, ...
IEEE Journal of Selected Topics in Quantum Electronics 8 (6), 1349-1357, 2002
170 2002 Nitride semiconductor light emitting device having a silver p-Contact Y Kondoh, S Watanabe, Y Kaneko, S Nakagawa, N Yamada
US Patent 6,194,743, 2001
146 2001 1.55-/spl mu/m InP-lattice-matched VCSELs with AlGaAsSb-AlAsSb DBRs S Nakagawa, E Hall, G Almuneau, JK Kim, DA Buell, H Kroemer, ...
IEEE Journal of Selected Topics in Quantum Electronics 7 (2), 224-230, 2001
101 2001 A micro chemical analyzing system integrated on a silicon wafer S Nakagawa, S Shoji, M Esashi
IEEE Proceedings on Micro Electro Mechanical Systems, An Investigation of …, 1990
94 1990 III-nitride semiconductor light emitting device having a silver p-contact Y Kondoh, S Watanabe, Y Kaneko, S Nakagawa, N Yamada
US Patent 7,262,436, 2007
76 2007 88 C, continuous-wave operation of apertured, intracavity contacted, 1.55 μm vertical-cavity surface-emitting lasers S Nakagawa, E Hall, G Almuneau, JK Kim, DA Buell, H Kroemer, ...
Applied Physics Letters 78 (10), 1337-1339, 2001
73 2001 Semiconductor light emitting device having a silver p-contact Y Kondoh, S Watanabe, Y Kaneko, S Nakagawa, N Yamada
US Patent 6,900,472, 2005
63 2005 Second‐harmonic generation from GaAs/AlAs vertical cavity S Nakagawa, N Yamada, N Mikoshiba, DE Mars
Applied physics letters 66 (17), 2159-2161, 1995
59 1995 Room-temperature, CW operation of lattice-matched long-wavelength VCSELs E Hall, S Nakagawa, G Almuneau, JK Kim, LA Coldren
Electronics Letters 36 (17), 1, 2000
57 2000 Blue vertical-cavity surface-emitting lasers based on second-harmonic generation grown on (311) B and (411) A GaAs substrates Y Kaneko, S Nakagawa, Y Ichimura, N Yamada, DE Mars, T Takeuchi
Journal of Applied Physics 87 (4), 1597-1603, 2000
53 2000 Near-room-temperature continuous-wave operation of multiple-active-region 1.55 JK Kim, S Nakagawa, E Hall, LA Coldren
Applied Physics Letters 77 (20), 3137-3139, 2000
50 2000 Improved electrical and thermal properties of InP-AlGaAsSb Bragg mirrors for long-wavelength vertical-cavity lasers G Almuneau, E Hall, T Mukaihara, S Nakagawa, C Luo, DR Clarke, ...
IEEE Photonics Technology Letters 12 (10), 1322-1324, 2000
46 2000 1.5 mW/Gbps low power optical interconnect transmitter exploiting high-efficiency VCSEL and CMOS driver S Nakagawa, D Kuchta, C Schow, R John, LA Coldren, YC Chang
Optical Fiber Communication Conference, OThS3, 2008
44 2008 Energy-efficient 1060-nm optical link operating up to 28 Gb/s JB Héroux, T Kise, M Funabashi, T Aoki, CL Schow, AV Rylyakov, ...
Journal of Lightwave Technology 33 (4), 733-740, 2015
39 2015 Selectively etched undercut apertures in AlAsSb-based VCSELs E Hall, S Nakagawa, G Almuneau, JK Kim, LA Coldren
IEEE Photonics Technology Letters 13 (2), 97-99, 2001
39 2001 Wavelength monitor using hybrid approach DM Baney, N Yamada, S Watanabe, S Nakagawa, Y Ichimura
US Patent 6,486,984, 2002
37 2002 InGaAs/GaAs vertical-cavity surface-emitting lasers on (311) B GaAs substrate Y Kaneko, S Nakagawa, T Takeuchi, DE Mars, N Yamada, N Mikoshiba
Electronics Letters 31 (10), 805-806, 1995
37 1995 Molecular beam epitaxial growth of monolithic 1.55 μm vertical cavity surface emitting lasers with AlGaAsSb/AlAsSb Bragg mirrors G Almuneau, E Hall, S Nakagawa, JK Kim, D Lofgreen, O Sjölund, C Luo, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2000
36 2000