| Ultrahigh efficiencies in vertical epitaxial heterostructure architectures S Fafard, MCA York, F Proulx, CE Valdivia, MM Wilkins, R Arès, V Aimez, ... Applied Physics Letters 108 (7), 2016 | 121 | 2016 |
| High-photovoltage GaAs vertical epitaxial monolithic heterostructures with 20 thin p/n junctions and a conversion efficiency of 60% S Fafard, F Proulx, MCA York, LS Richard, PO Provost, R Arès, V Aimez, ... Applied Physics Letters 109 (13), 2016 | 101 | 2016 |
| Extremely high aspect ratio GaAs and GaAs/AlGaAs nanowaveguides fabricated using chlorine ICP etching with N2-promoted passivation M Volatier, D Duchesne, R Morandotti, R Ares, V Aimez Nanotechnology 21 (13), 134014, 2010 | 100 | 2010 |
| Performance comparison of AlGaAs, GaAs and InGaP tunnel junctions for concentrated multijunction solar cells JF Wheeldon, CE Valdivia, AW Walker, G Kolhatkar, A Jaouad, A Turala, ... Progress in Photovoltaics: Research and Applications 19 (4), 442-452, 2011 | 98 | 2011 |
| Uprooting defects to enable high-performance III–V optoelectronic devices on silicon YA Bioud, A Boucherif, M Myronov, A Soltani, G Patriarche, N Braidy, ... Nature communications 10 (1), 4322, 2019 | 74 | 2019 |
| Second harmonic generation in AlGaAs photonic wires using low power continuous wave light D Duchesne, KA Rutkowska, M Volatier, F Légaré, S Delprat, M Chaker, ... Optics express 19 (13), 12408-12417, 2011 | 69 | 2011 |
| Mesoporous germanium morphology transformation for lift-off process and substrate re-use A Boucherif, G Beaudin, V Aimez, R Ares Applied Physics Letters 102 (1), 2013 | 63 | 2013 |
| Low loss directional coupling between highly dissimilar optical waveguides for high refractive index integrated photonic circuits E Grondin, G Beaudin, V Aimez, R Ares, PG Charette US Patent 8,787,712, 2014 | 61 | 2014 |
| Fast growth synthesis of mesoporous germanium films by high frequency bipolar electrochemical etching YA Bioud, A Boucherif, A Belarouci, E Paradis, S Fafard, V Aimez, ... Electrochimica Acta 232, 422-430, 2017 | 56 | 2017 |
| Chemical composition of nanoporous layer formed by electrochemical etching of p-Type GaAs YA Bioud, A Boucherif, A Belarouci, E Paradis, D Drouin, R Arès Nanoscale research letters 11, 1-8, 2016 | 55 | 2016 |
| Antireflection coating design for triple-junction III–V/Ge high-efficiency solar cells using low absorption PECVD silicon nitride R Homier, A Jaouad, A Turala, CE Valdivia, D Masson, SG Wallace, ... IEEE Journal of Photovoltaics 2 (3), 393-397, 2012 | 55 | 2012 |
| Mesoporous Germanium formed by bipolar electrochemical etching S Tutashkonko, A Boucherif, T Nychyporuk, A Kaminski-Cachopo, R Arès, ... Electrochimica Acta 88, 256-262, 2013 | 49 | 2013 |
| Five-volt vertically-stacked, single-cell GaAs photonic power converter CE Valdivia, MM Wilkins, B Bouzazi, A Jaouad, V Aimez, R Arès, ... Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IV …, 2015 | 47 | 2015 |
| Observation of one-and two-dimensional discrete surface spatial solitons S Suntsov, KG Makris, GA Siviloglou, R Iwanow, R Schiek, ... Journal of Nonlinear Optical Physics & Materials 16 (04), 401-426, 2007 | 47 | 2007 |
| Nonlinear scattering and trapping by local photonic potentials Y Linzon, R Morandotti, M Volatier, V Aimez, R Ares, S Bar-Ad Physical review letters 99 (13), 133901, 2007 | 43 | 2007 |
| Approaching the Shockley-Queisser limit: General assessment of the main limiting mechanisms in photovoltaic cells A Vossier, F Gualdi, A Dollet, R Ares, V Aimez Journal of Applied Physics 117 (1), 2015 | 42 | 2015 |
| Calibrated scanning spreading resistance microscopy profiling of carriers in III–V structures RP Lu, KL Kavanagh, SJ Dixon-Warren, A Kuhl, AJ SpringThorpe, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2001 | 42 | 2001 |
| Optical modes at the interface between two dissimilar discrete meta-materials S Suntsov, KG Makris, DN Christodoulides, GI Stegeman, R Morandotti, ... Optics Express 15 (8), 4663-4670, 2007 | 41 | 2007 |
| Measurement of strong photon recycling in ultra‐thin GaAs n/p junctions monolithically integrated in high‐photovoltage vertical epitaxial heterostructure architectures with … F Proulx, MCA York, PO Provost, R Arès, V Aimez, DP Masson, S Fafard physica status solidi (RRL)–Rapid Research Letters 11 (2), 1600385, 2017 | 40 | 2017 |
| Optimized pre-treatment process for MOS-GaN devices passivation A Chakroun, H Maher, E Al Alam, A Souifi, V Aimez, R Arès, A Jaouad IEEE Electron Device Letters 35 (3), 318-320, 2014 | 40 | 2014 |
Vincent AimezProfesseur, Université de SherbrookeEmail verificata su USherbrooke.ca