| Transistors based on two-dimensional materials for future integrated circuits S Das, A Sebastian, E Pop, CJ McClellan, AD Franklin, T Grasser, ... Nature Electronics 4 (11), 786-799, 2021 | 649 | 2021 |
| Energy Dissipation in Monolayer MoS2 Electronics E Yalon, CJ McClellan, KKH Smithe, M Muñoz Rojo, RL Xu, ... Nano letters 17 (6), 3429-3433, 2017 | 239 | 2017 |
| Field Effect Transistors with Current Saturation and Voltage Gain in Ultrathin ReS2 CM Corbet, C McClellan, A Rai, SS Sonde, E Tutuc, SK Banerjee ACS nano 9 (1), 363-370, 2015 | 210 | 2015 |
| High Current Density in Monolayer MoS2 Doped by AlOx CJ McClellan, E Yalon, KKH Smithe, SV Suryavanshi, E Pop ACS nano 15 (1), 1587-1596, 2021 | 209 | 2021 |
| Temperature-Dependent Thermal Boundary Conductance of Monolayer MoS2 by Raman Thermometry E Yalon, B Aslan, KKH Smithe, CJ McClellan, SV Suryavanshi, F Xiong, ... ACS applied materials & interfaces 9 (49), 43013-43020, 2017 | 185 | 2017 |
| Rapid Flame Synthesis of Atomically Thin MoO3 down to Monolayer Thickness for Effective Hole Doping of WSe2 L Cai, CJ McClellan, AL Koh, H Li, E Yalon, E Pop, X Zheng Nano letters 17 (6), 3854-3861, 2017 | 170 | 2017 |
| An electrochemical thermal transistor A Sood, F Xiong, S Chen, H Wang, D Selli, J Zhang, CJ McClellan, J Sun, ... Nature communications 9 (1), 4510, 2018 | 147 | 2018 |
| Ultrahigh thermal isolation across heterogeneously layered two-dimensional materials S Vaziri, E Yalon, M Muñoz Rojo, SV Suryavanshi, H Zhang, ... Science advances 5 (8), eaax1325, 2019 | 139 | 2019 |
| Uncovering the Effects of Metal Contacts on Monolayer MoS2 K Schauble, D Zakhidov, E Yalon, S Deshmukh, RW Grady, KA Cooley, ... ACS nano 14 (11), 14798-14808, 2020 | 132 | 2020 |
| Fast Spiking of a Mott VO2–Carbon Nanotube Composite Device SM Bohaichuk, S Kumar, G Pitner, CJ McClellan, J Jeong, MG Samant, ... Nano letters 19 (10), 6751-6755, 2019 | 89 | 2019 |
| Reduction of hysteresis in MoS2 transistors using pulsed voltage measurements IM Datye, AJ Gabourie, CD English, KKH Smithe, CJ McClellan, NC Wang, ... 2D Materials 6 (1), 011004, 2018 | 72 | 2018 |
| Effective n-type doping of monolayer MoS2 by AlOx CJ McClellan, E Yalon, KKH Smithe, SV Suryavanshi, E Pop 2017 75th annual device research conference (DRC), 1-2, 2017 | 63 | 2017 |
| 3D Monolithic Stacked 1T1R cells using Monolayer MoS2 FET and hBN RRAM Fabricated at Low (150°C) Temperature CH Wang, C McClellan, Y Shi, X Zheng, V Chen, M Lanza, E Pop, ... 2018 IEEE International Electron Devices Meeting (IEDM), 22.5. 1-22.5. 4, 2018 | 57 | 2018 |
| High-Performance p–n Junction Transition Metal Dichalcogenide Photovoltaic Cells Enabled by MoOx Doping and Passivation K Nassiri Nazif, A Kumar, J Hong, N Lee, R Islam, CJ McClellan, O Karni, ... Nano letters 21 (8), 3443-3450, 2021 | 55 | 2021 |
| Unipolar n-type black phosphorus transistors with low work function contacts CH Wang, JAC Incorvia, CJ McClellan, AC Yu, MJ Mleczko, E Pop, ... Nano Letters 18 (5), 2822-2827, 2018 | 49 | 2018 |
| Spatial Separation of Carrier Spin by the Valley Hall Effect in Monolayer WSe2 Transistors E Barré, JAC Incorvia, SH Kim, CJ McClellan, E Pop, HSP Wong, ... Nano letters 19 (2), 770-774, 2019 | 47 | 2019 |
| Localized Triggering of the Insulator-Metal Transition in VO2 Using a Single Carbon Nanotube SM Bohaichuk, M Muñoz Rojo, G Pitner, CJ McClellan, F Lian, J Li, ... ACS nano 13 (10), 11070-11077, 2019 | 42 | 2019 |
| Nano Lett. L Cai, C McClellan, AL Koh, H Li, E Yalon, E Pop, X Zheng Nano Lett 17 (6), 3854-3861, 2017 | 31 | 2017 |
| Nonequilibrium Phonon Thermal Resistance at MoS2/Oxide and Graphene/Oxide Interfaces W Zheng, CJ McClellan, E Pop, YK Koh ACS Applied Materials & Interfaces 14 (19), 22372-22380, 2022 | 22 | 2022 |
| Oxidized titanium as a gate dielectric for graphene field effect transistors and its tunneling mechanisms CM Corbet, C McClellan, K Kim, S Sonde, E Tutuc, SK Banerjee ACS nano 8 (10), 10480-10485, 2014 | 19 | 2014 |
Eric PopPease-Ye Professor of Electrical Engineering, MSE, AP at Stanford & SLACEmail verificata su stanford.edu