Thermal conductivity in metallic nanostructures at high temperature: Electrons, phonons, and the Wiedemann-Franz law N Stojanovic, DHS Maithripala, JM Berg, M Holtz
Physical Review B—Condensed Matter and Materials Physics 82 (7), 075418, 2010
302 2010 High quality GaN grown on Si (111) by gas source molecular beam epitaxy with ammonia SA Nikishin, NN Faleev, VG Antipov, S Francoeur, L Grave de Peralta, ...
Applied physics letters 75 (14), 2073-2075, 1999
298 1999 Structural, electrical, and terahertz transmission properties of VO2 thin films grown on c-, r-, and m-plane sapphire substrates Y Zhao, J Hwan Lee, Y Zhu, M Nazari, C Chen, H Wang, A Bernussi, ...
Journal of Applied Physics 111 (5), 2012
243 2012 Structural and optical properties of carbondoped AlN substrates grown by hydride vapor phase epitaxy using AlN substrates prepared by physical vapor transport T Prokofyeva, M Seon, J Vanbuskirk, M Holtz
Phys. Rev. B 63, 125313, 2001
192 2001 Enhanced signal-to-background ratios in voltammetric measurements made at diamond thin-film electrochemical interfaces JW Strojek, MC Granger, GM Swain, T Dallas, MW Holtz
Analytical chemistry 68 (13), 2031-2037, 1996
176 1996 Raman spectroscopy of carbon materials JR Dennison, M Holtz, G Swain
Spectroscopy 11 (8), 1996
174 1996 Tunable dual-band terahertz metamaterial bandpass filters Y Zhu, S Vegesna, Y Zhao, V Kuryatkov, M Holtz, Z Fan, M Saed, ...
Optics letters 38 (14), 2382-2384, 2013
145 2013 Visible and ultraviolet Raman scattering studies of M Holtz, WM Duncan, S Zollner, R Liu
Journal of Applied Physics 88 (5), 2523-2528, 2000
134 2000 Raman studies of nitrogen incorporation in T Prokofyeva, T Sauncy, M Seon, M Holtz, Y Qiu, S Nikishin, H Temkin
Applied physics letters 73 (10), 1409-1411, 1998
133 1998 Microfabrication and characterization of Teflon AF-coated liquid core waveguide channels in silicon A Datta, IY Eom, A Dhar, P Kuban, R Manor, I Ahmad, S Gangopadhyay, ...
IEEE Sensors Journal 3 (6), 788-795, 2003
132 2003 Dependence of the stress–temperature coefficient on dislocation density in epitaxial GaN grown on I Ahmad, M Holtz, NN Faleev, H Temkin
Journal of applied physics 95 (4), 1692-1697, 2004
131 2004 Effect of substrate orientation on terahertz optical transmission through VO2 thin films and application to functional antireflection coatings Y Zhu, Y Zhao, M Holtz, Z Fan, AA Bernussi
JOSA B 29 (9), 2373-2378, 2012
122 2012 Influence of defects on structural and electrical properties of VO2 thin films C Chen, Y Zhao, X Pan, V Kuryatkov, A Bernussi, M Holtz, Z Fan
Journal of Applied Physics 110 (2), 2011
120 2011 Si-doped AlxGa1− xN (0.56⩽×⩽ 1) layers grown by molecular beam epitaxy with ammonia B Borisov, V Kuryatkov, Y Kudryavtsev, R Asomoza, S Nikishin, DY Song, ...
Applied physics letters 87 (13), 2005
120 2005 Vibrational properties of AlN grown on (111)-oriented silicon T Prokofyeva, M Seon, J Vanbuskirk, M Holtz
Phys. Rev. B 63, 125313, 2001
120 2001 A two-stage discrete peristaltic micropump JM Berg, R Anderson, M Anaya, B Lahlouh, M Holtz, T Dallas
Sensors and Actuators A: Physical 104 (1), 6-10, 2003
111 2003 AlN/AlGaInN superlattice light-emitting diodes at 280 nm G Kipshidze, V Kuryatkov, K Zhu, B Borisov, M Holtz, S Nikishin, H Temkin
Journal of applied physics 93 (3), 1363-1366, 2003
111 2003 AlGaInN-based ultraviolet light-emitting diodes grown on Si (111) G Kipshidze, V Kuryatkov, B Borisov, M Holtz, S Nikishin, H Temkin
Applied Physics Letters 80 (20), 3682-3684, 2002
109 2002 VO2 multidomain heteroepitaxial growth and terahertz transmission modulation C Chen, Y Zhu, Y Zhao, JH Lee, H Wang, A Bernussi, M Holtz, Z Fan
Applied Physics Letters 97 (21), 2010
103 2010 Self-heating study of an AlGaN∕ GaN-based heterostructure field-effect transistor using ultraviolet micro-Raman scattering I Ahmad, V Kasisomayajula, M Holtz, JM Berg, SR Kurtz, CP Tigges, ...
Applied Physics Letters 86 (17), 2005
100 2005 
Sergey NikishinProfessor of Electrical Engineering, Texas Tech UniversityEmail verificata su ttu.edu