Eilam Yalon

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Eric PopPease-Ye Professor of Electrical Engineering, MSE, AP at Stanford & SLACEmail verificata su stanford.edu
Connor J. McClellanStanford UniversityEmail verificata su stanford.edu
Dr. Miguel Muñoz Rojo - ERC granteeTenured permanent researcher (CSIC) & Associate Prof. (University of Twente)Email verificata su csic.es
Sanchit DeshmukhPhD, Stanford UniversityEmail verificata su alumni.stanford.edu
Christopher M. NeumannIntelEmail verificata su intel.com
Dan RitterProfessor of Electrical Engineering, Technion, IsraelEmail verificata su ee.technion.ac.il
Saurabh V. SuryavanshiSynopsysEmail verificata su suryavanshi.me
Nicolás WainsteinTechnion - Israel Institute of TechnologyEmail verificata su technion.ac.il
Feng XiongAssociate Professor, Department of Electrical and Computer Engineering, University of PittsburghEmail verificata su pitt.edu
Shahar KvatinskyTechnion - Israel Institute of TechnologyEmail verificata su ee.technion.ac.il
Sam VaziriStanford UniversityEmail verificata su stanford.edu
Alexander J GabourieDeepSim, Inc.Email verificata su deepsim.io
Connor BaileyStanford UniversityEmail verificata su stanford.edu
H.-S. Philip WongProfessor of Electrical Engineering, Stanford UniversityEmail verificata su stanford.edu
Emanuel BerTechnion - Israel Institute of TechnologyEmail verificata su campus.technion.ac.il
Tony F HeinzDepts. of Applied Physics, Photon Science, and, by courtesy, of Electrical Eng., SLAC, StanfordEmail verificata su stanford.edu
Ilan RiessPhysics Department TechnionEmail verificata su tx.technion.ac.il
Mario LanzaIEEE Fellow | Associate Professor at National University of SingaporeEmail verificata su kaust.edu.sa
Burak AslanAssistant Professor, Bogazici UniversityEmail verificata su boun.edu.tr
Lior KornblumViterbi Dept. of Electrical & Computer Engineering, Technion - Israel Institute of TechnologyEmail verificata su ee.technion.ac.il

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Eilam Yalon

Technion, Israel Institute of Technology

Email verificata su technion.ac.il - Home page

Nanoelectronics electron device physics energy-efficiency nanomaterials


Titolo Ordina per citazioni Ordina per anno Ordina per titolo	Citata da Citata da	Anno
Recommended methods to study resistive switching devices M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ... Advanced Electronic Materials 5 (1), 1800143, 2019	652	2019
Energy Dissipation in Monolayer MoS₂ Electronics E Yalon, CJ McClellan, KKH Smithe, M Muñoz Rojo, RL Xu, ... Nano letters 17 (6), 3429-3433, 2017	240	2017
High Current Density in Monolayer MoS₂ Doped by AlO_x CJ McClellan, E Yalon, KKH Smithe, SV Suryavanshi, E Pop ACS nano 15 (1), 1587-1596, 2021	210	2021
Temperature-Dependent Thermal Boundary Conductance of Monolayer MoS₂ by Raman Thermometry E Yalon, B Aslan, KKH Smithe, CJ McClellan, SV Suryavanshi, F Xiong, ... ACS applied materials & interfaces 9 (49), 43013-43020, 2017	185	2017
Rapid Flame Synthesis of Atomically Thin MoO₃ down to Monolayer Thickness for Effective Hole Doping of WSe₂ L Cai, CJ McClellan, AL Koh, H Li, E Yalon, E Pop, X Zheng Nano letters 17 (6), 3854-3861, 2017	171	2017
Ultrahigh thermal isolation across heterogeneously layered two-dimensional materials S Vaziri, E Yalon, M Muñoz Rojo, SV Suryavanshi, H Zhang, ... Science advances 5 (8), eaax1325, 2019	139	2019
Uncovering the Effects of Metal Contacts on Monolayer MoS₂ K Schauble, D Zakhidov, E Yalon, S Deshmukh, RW Grady, KA Cooley, ... ACS nano 14 (11), 14798-14808, 2020	132	2020
Engineering field effect transistors with 2D semiconducting channels: Status and prospects X Jing, Y Illarionov, E Yalon, P Zhou, T Grasser, Y Shi, M Lanza Advanced Functional Materials 30 (18), 1901971, 2020	97	2020
Nanoscale Heterogeneities in Monolayer MoSe₂ Revealed by Correlated Scanning Probe Microscopy and Tip-Enhanced Raman Spectroscopy KKH Smithe, AV Krayev, CS Bailey, HR Lee, E Yalon, B Aslan, ... ACS Applied Nano Materials 1 (2), 572-579, 2017	75	2017
Spatially resolved thermometry of resistive memory devices E Yalon, S Deshmukh, M Muñoz Rojo, F Lian, CM Neumann, F Xiong, ... Scientific reports 7 (1), 15360, 2017	69	2017
Effective n-type doping of monolayer MoS₂ by AlO_x CJ McClellan, E Yalon, KKH Smithe, SV Suryavanshi, E Pop 2017 75th annual device research conference (DRC), 1-2, 2017	63	2017
Radiofrequency switches based on emerging resistive memory technologies-a survey N Wainstein, G Adam, E Yalon, S Kvatinsky Proceedings of the IEEE 109 (1), 77-95, 2020	59	2020
Localized Heating and Switching in MoTe₂-Based Resistive Memory Devices IM Datye, MM Rojo, E Yalon, S Deshmukh, MJ Mleczko, E Pop Nano letters 20 (2), 1461-1467, 2020	56	2020
Engineering thermal and electrical interface properties of phase change memory with monolayer MoS2 CM Neumann, KL Okabe, E Yalon, RW Grady, HSP Wong, E Pop Applied Physics Letters 114 (8), 2019	52	2019
Detection of the insulating gap and conductive filament growth direction in resistive memories E Yalon, I Karpov, V Karpov, I Riess, D Kalaev, D Ritter Nanoscale 7 (37), 15434-15441, 2015	51	2015
Monolayer molybdenum disulfide switches for 6G communication systems M Kim, G Ducournau, S Skrzypczak, SJ Yang, P Szriftgiser, N Wainstein, ... Nature Electronics 5 (6), 367-373, 2022	50	2022
Thermometry of filamentary RRAM devices E Yalon, AA Sharma, M Skowronski, JA Bain, D Ritter, IV Karpov IEEE Transactions on Electron Devices 62 (9), 2972-2977, 2015	48	2015
Understanding the switching mechanism of interfacial phase change memory KL Okabe, A Sood, E Yalon, CM Neumann, M Asheghi, E Pop, ... Journal of Applied Physics 125 (18), 2019	46	2019
Towards ultimate scaling limits of phase-change memory F Xiong, E Yalon, A Behnam, CM Neumann, KL Grosse, S Deshmukh, ... 2016 IEEE International Electron Devices Meeting (IEDM), 4.1. 1-4.1. 4, 2016	43	2016
Resistive Switching inProbed by a Metal–Insulator–Semiconductor Bipolar Transistor E Yalon, A Gavrilov, S Cohen, D Mistele, B Meyler, J Salzman, D Ritter IEEE electron device letters 33 (1), 11-13, 2011	43	2011

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