Articoli con mandati relativi all'accesso pubblico - Pankaj SharmaUlteriori informazioni
Non disponibili pubblicamente: 4
Ferroelectric FET Analog Synapse for Acceleration of Deep Neural Network Training
M Jerry, PY Chen, J Zhang, P Sharma, K Ni, S Yu, S Datta
2017 IEEE International Electron Devices Meeting (IEDM), 6.2.1-6.2.4, 2017
Mandati: US National Science Foundation
Performance benchmarking of p-type In0.65Ga0.35As/GaAs0.4Sb0.6 and Ge/Ge0.93Sn0.07 hetero-junction tunnel FETs
R Pandey, C Schulte-Braucks, RN Sajjad, M Barth, RK Ghosh, B Grisafe, ...
2016 IEEE International Electron Devices Meeting (IEDM), 19.6.1-19.6.4., 2016
Mandati: US National Science Foundation, Federal Ministry of Education and Research …
Determination of minimum conductivity of graphene from contactless microwaves measurements
P Sharma, JS Gomez-Diaz, AM Ionescu, J Perruisseau-Carrier
2012 12th IEEE International Conference on Nanotechnology (IEEE-NANO), 1-4, 2012
Mandati: Swiss National Science Foundation
Nanoelectromechanical microwave switch based on graphene
P Sharma, JP Carrier, AM Ionescu
2013 14th International Conference on Ultimate Integration on Silicon (ULIS …, 2013
Mandati: Swiss National Science Foundation
Disponibili pubblicamente: 8
A ferroelectric field effect transistor based synaptic weight cell
M Jerry, S Dutta, A Kazemi, K Ni, J Zhang, PY Chen, P Sharma, S Yu, ...
Journal of Physics D: Applied Physics 51 (43), 434001, 2018
Mandati: US National Science Foundation, US Department of Defense
Non-contact characterization of graphene surface impedance at micro and millimeter waves
JS Gomez-Diaz, J Perruisseau-Carrier, P Sharma, A Ionescu
Journal of Applied Physics 111 (11), 2012
Mandati: Swiss National Science Foundation
Ferroelectric Transistor Model based on Self-Consistent Solution of 2D Poisson’s, Non- Equilibrium Green’s Function and Multi-Domain Landau Khalatnikov Equations
AK Saha, P Sharma, I Dabo, S Datta, SK Gupta
2017 IEEE International Electron Devices Meeting (IEDM), 13.5.1-13.5.4, 2017
Mandati: US National Science Foundation, US Department of Defense
Room-Temperature Negative Differential Resistance in Graphene Field Effect Transistors: Experiments and Theory
P Sharma, LS Bernard, A Bazigos, A Magrez, AM Ionescu
ACS nano, 2014
Mandati: European Commission
Electromagnetic performance of RF NEMS graphene capacitive switches
P Sharma, J Perruisseau-Carrier, C Moldovan, AM Ionescu
Nanotechnology, IEEE Transactions on 13 (1), 70-79, 2014
Mandati: Swiss National Science Foundation
Fabrication, Characterization, and Analysis of Ge/GeSn Heterojunction p-Type Tunnel Transistors
C Schulte-Braucks, R Pandey, RN Sajjad, M Barth, RK Ghosh, B Grisafe, ...
IEEE Transactions on Electron Devices, 1 - 9, 2017
Mandati: US National Science Foundation, European Commission, Federal Ministry of …
Graphene quantum capacitors for high frequency tunable analog applications
CF Moldovan, WA Vitale, P Sharma, M Tamagnone, JR Mosig, ...
Nano letters 16 (8), 4746-4753, 2016
Mandati: European Commission
Reflection amplifier based on graphene
P Sharma, LS Bernard, A Bazigos, A Magrez, L Forró, AM Ionescu
2016 46th European Solid-State Device Research Conference (ESSDERC), 55-58, 2016
Mandati: Swiss National Science Foundation
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