| Effective Passivation of Exfoliated Black Phosphorus Transistors against Ambient Degradation JD Wood, SA Wells, D Jariwala, KS Chen, EK Cho, VK Sangwan, X Liu, ... Nano letters 14 (12), 6964–6970, 2014 | 1636 | 2014 |
| Covalent functionalization and passivation of exfoliated black phosphorus via aryl diazonium chemistry CR Ryder, JD Wood, SA Wells, Y Yang, D Jariwala, TJ Marks, GC Schatz, ... Nature chemistry 8 (6), 597-602, 2016 | 809 | 2016 |
| Solvent exfoliation of electronic-grade, two-dimensional black phosphorus J Kang, JD Wood, SA Wells, JH Lee, X Liu, KS Chen, MC Hersam ACS nano 9 (4), 3596-3604, 2015 | 787 | 2015 |
| Ultrahigh sensitivity and layer-dependent sensing performance of phosphorene-based gas sensors S Cui, H Pu, SA Wells, Z Wen, S Mao, J Chang, MC Hersam, J Chen Nature communications 6 (1), 8632, 2015 | 714 | 2015 |
| Chemically tailoring semiconducting two-dimensional transition metal dichalcogenides and black phosphorus CR Ryder, JD Wood, SA Wells, MC Hersam ACS nano 10 (4), 3900-3917, 2016 | 288 | 2016 |
| Stable aqueous dispersions of optically and electronically active phosphorene J Kang, SA Wells, JD Wood, JH Lee, X Liu, CR Ryder, J Zhu, JR Guest, ... Proceedings of the National Academy of Sciences 113 (42), 11688-11693, 2016 | 263 | 2016 |
| Probing out-of-plane charge transport in black phosphorus with graphene-contacted vertical field-effect transistors J Kang, D Jariwala, CR Ryder, SA Wells, Y Choi, E Hwang, JH Cho, ... Nano letters 16 (4), 2580-2585, 2016 | 142 | 2016 |
| Solution‐based processing of optoelectronically active indium selenide J Kang, SA Wells, VK Sangwan, D Lam, X Liu, J Luxa, Z Sofer, ... Advanced Materials 30 (38), 1802990, 2018 | 113 | 2018 |
| Resolving the in‐plane anisotropic properties of black phosphorus X Liu, CR Ryder, SA Wells, MC Hersam Small Methods 1 (6), 1700143, 2017 | 109 | 2017 |
| Scanning Probe Nanopatterning and Layer-by-Layer Thinning of Black Phosphorus. X Liu, KS Chen, SA Wells, I Balla, J Zhu, JD Wood, MC Hersam Advanced Materials (Deerfield Beach, Fla.) 29 (1), 2016 | 100 | 2016 |
| Suppressing ambient degradation of exfoliated InSe nanosheet devices via seeded atomic layer deposition encapsulation SA Wells, A Henning, JT Gish, VK Sangwan, LJ Lauhon, MC Hersam Nano letters 18 (12), 7876-7882, 2018 | 84 | 2018 |
| Fabrication of Releasable Single‐Crystal Silicon–Metal Oxide Field‐Effect Devices and Their Deterministic Assembly on Foreign Substrates HJ Chung, T Kim, HS Kim, SA Wells, S Jo, N Ahmed, YH Jung, SM Won, ... Advanced Functional Materials 21 (16), 3029-3036, 2011 | 68 | 2011 |
| Semi-quantitative design of black phosphorous field-effect transistor sensors for heavy metal ion detection in aqueous media J Chang, H Pu, SA Wells, K Shi, X Guo, G Zhou, X Sui, R Ren, S Mao, ... Molecular Systems Design & Engineering 4 (3), 491-502, 2019 | 31 | 2019 |
| Molecular-scale characterization of photoinduced charge separation in mixed-dimensional InSe–organic van der Waals heterostructures S Li, C Zhong, A Henning, VK Sangwan, Q Zhou, X Liu, MS Rahn, ... ACS nano 14 (3), 3509-3518, 2020 | 24 | 2020 |
| Intrinsic carrier multiplication in layered Bi2O2Se avalanche photodiodes with gain bandwidth product exceeding 1 GHz VK Sangwan, J Kang, D Lam, JT Gish, SA Wells, J Luxa, JP Male, ... Nano Research 14, 1961-1966, 2021 | 23 | 2021 |
| All-electrical determination of crystal orientation in anisotropic two-dimensional materials L Peng, SA Wells, CR Ryder, MC Hersam, M Grayson Physical review letters 120 (8), 086801, 2018 | 23 | 2018 |
| Extrinsic polarization-controlled optical anisotropy in plasmon-black phosphorus coupled system Z Liu, SA Wells, S Butun, E Palacios, MC Hersam, K Aydin Nanotechnology 29 (28), 285202, 2018 | 18 | 2018 |
| Low-voltage 2D material field-effect transistors enabled by ion gel capacitive coupling Y Choi, J Kang, D Jariwala, SA Wells, MS Kang, TJ Marks, MC Hersam, ... Chemistry of Materials 29 (9), 4008-4013, 2017 | 16 | 2017 |
| Amorphous to Crystal Phase Change Memory Effect with Two-Fold Bandgap Difference in Semiconducting K2Bi8Se13 SM Islam, VK Sangwan, D Bruce Buchholz, SA Wells, L Peng, L Zeng, ... Journal of the American Chemical Society 143 (16), 6221-6228, 2021 | 12 | 2021 |
| Phase stability and optoelectronic properties of the bixbyite phase in the gallium–indium–tin–oxide system A Dolgonos, SA Wells, KR Poeppelmeier, TO Mason Journal of the American Ceramic Society 98 (2), 669-674, 2015 | 8 | 2015 |
Mark HersamNorthwestern UniversityEmail verificata su northwestern.edu