| Bulk AlN growth by physical vapour transport C Hartmann, A Dittmar, J Wollweber, M Bickermann Semiconductor Science and Technology 29 (8), 084002, 2014 | 124 | 2014 |
| Performance characteristics of UV-C AlGaN based lasers grown on sapphire and bulk AlN substrates M Martens, F Mehnke, C Kuhn, C Reich, V Kueller, A Knauer, C Netzel, ... Photonics Technology Letters 26 (4), 342-345, 2014 | 120 | 2014 |
| Preparation of deep UV transparent AlN substrates with high structural perfection for optoelectronic devices C Hartmann, J Wollweber, S Sintonen, A Dittmar, L Kirste, S Kollowa, ... CrystEngComm 18, 3488-3497, 2016 | 85 | 2016 |
| Preparation of bulk AlN seeds by spontaneous nucleation of freestanding crystals C Hartmann, J Wollweber, A Dittmar, K Irmscher, A Kwasniewski, ... Japanese Journal of Applied Physics 52 (8S), 08JA06, 2013 | 83 | 2013 |
| Ultraviolet luminescence in AlN T Schulz, M Albrecht, K Irmscher, C Hartmann, J Wollweber, R Fornari physica status solidi (b) 248 (6), 1513-1518, 2011 | 75 | 2011 |
| Thermal conductivity of single-crystalline AlN R Rounds, B Sarkar, A Klump, C Hartmann, T Nagashima, R Kirste, ... Applied Physics Express 11 (7), 071001, 2018 | 74 | 2018 |
| Identification of a tri-carbon defect and its relation to the ultraviolet absorption in aluminum nitride K Irmscher, C Hartmann, C Guguschev, M Pietsch, J Wollweber, ... Journal of Applied Physics 114 (12), 2013 | 56 | 2013 |
| Status and Prospects of AlN Templates on Sapphire for Ultraviolet Light‐Emitting Diodes S Hagedorn, S Walde, A Knauer, N Susilo, D Pacak, L Cancellara, ... physica status solidi (a), 1901022, 2020 | 47 | 2020 |
| Homoepitaxial seeding and growth of bulk AlN by sublimation C Hartmann, J Wollweber, C Seitz, M Albrecht, R Fornari Journal of crystal growth 310 (5), 930-934, 2008 | 45 | 2008 |
| Favourable growth conditions for the preparation of bulk AlN single crystals by PVT C Hartmann, L Matiwe, J Wollweber, I Gamov, K Irmscher, M Bickermann, ... CrystEngComm, 2020 | 38 | 2020 |
| The influence of point defects on the thermal conductivity of AlN crystals R Rounds, B Sarkar, D Alden, Q Guo, A Klump, C Hartmann, ... Journal of Applied Physics 123, 185107, 2018 | 37 | 2018 |
| SiC seed polarity-dependent bulk AlN growth under the influence of residual oxygen C Hartmann, M Albrecht, J Wollweber, J Schuppang, U Juda, ... Journal of crystal growth 344 (1), 19-26, 2012 | 34 | 2012 |
| Compensating defects in Si-doped AlN bulk crystals K Irmscher, T Schulz, M Albrecht, C Hartmann, J Wollweber, R Fornari Physica B: Condensed Matter 401, 323-326, 2007 | 23 | 2007 |
| n‐type conductivity in sublimation‐grown AlN bulk crystals T Schulz, K Irmscher, M Albrecht, C Hartmann, J Wollweber, R Fornari physica status solidi (RRL)–Rapid Research Letters 1 (4), 147-149, 2007 | 23 | 2007 |
| Growth of bulk AlN single crystals with low oxygen content taking into account thermal and kinetic effects of oxygen-related gaseous species C Guguschev, A Dittmar, E Moukhina, C Hartmann, S Golka, J Wollweber, ... Journal of crystal growth 360, 185-188, 2012 | 22 | 2012 |
| High‐temperature Annealing and Patterned AlN/sapphire Interfaces S Hagedorn, A Mogilatenko, S Walde, D Pacak, J Weinrich, C Hartmann, ... physica status solidi (b), 2021 | 20 | 2021 |
| AlN overgrowth of nano-pillar-patterned sapphire with different offcut angle by metalorganic vapor phase epitaxy S Walde, S Hagedorn, PM Coulon, A Mogilatenko, C Netzel, J Weinrich, ... Journal of Crystal Growth 531, 125343, 2020 | 20 | 2020 |
| Electromechanical losses in carbon-and oxygen-containing bulk AlN single crystals I Kogut, C Hartmann, I Gamov, Y Suhak, M Schulz, S Schröder, ... Solid State Ionics 343, 115072, 2019 | 16 | 2019 |
| Carbon pair defects in aluminum nitride I Gamov, C Hartmann, J Wollweber, A Dittmar, T Straubinger, ... Journal of Applied Physics 126, 215102, 2019 | 16 | 2019 |
| Boron as an anti-surfactant in sublimation growth of AlN single crystals M Albrecht, J Wollweber, M Rossberg, M Schmidbauer, C Hartmann, ... Applied physics letters 88 (21), 2006 | 16 | 2006 |
Andrea DittmarForschungEmail verificata su ikz-berlin.de