Jo Shien Ng

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JPR DavidUniversity of SheffieldEmail verificata su sheffield.ac.uk
Chee Hing TanThe University Of SheffieldEmail verificata su sheffield.ac.uk
Mark HopkinsonUniversity of SheffieldEmail verificata su sheffield.ac.uk
Andrey KrysaSenior Research Fellow, University of SheffieldEmail verificata su sheffield.ac.uk
Stephen J SweeneyProfessor of Photonics and Nanotechnology, James Watt School of Engineering, University of GlasgowEmail verificata su glasgow.ac.uk
Huiyun LiuProfessor of Semiconductor Photonics, University College LondonEmail verificata su ucl.ac.uk
Abdul Rahman MohmadInstitute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan MalaysiaEmail verificata su ukm.edu.my
Xiao MengLumentumEmail verificata su lumentum.com
Kristian GroomSenior Lecturer, The University of SheffieldEmail verificata su sheffield.ac.uk
Gerald BullerHeriot-Watt UniversityEmail verificata su hw.ac.uk
Robert D RichardsResearch Fellow, University of SheffieldEmail verificata su sheffield.ac.uk
Majeed M. HayatProfessor and Department Chair, Electrical & Computer Engineering, Marquette UniversityEmail verificata su marquette.edu
Pin Jern KerProfessor, School of Engineering & Technology, Sunway UniversityEmail verificata su sunway.edu.my
Duu-Sheng Ong 王笃生Multimedia University, University Malaya, University of Sheffield, Technical University of DarmstadtEmail verificata su mmu.edu.my
Nurul Fadzlin HasbullahEmail verificata su iium.edu.my
niccolò CalandriPolitecnico di MilanoEmail verificata su polimi.it
Jon WillmottProfessor of Metrology, University of SheffieldEmail verificata su sheffield.ac.uk
Georges El-HowayekUniversity of New MexicoEmail verificata su ece.unm.edu
Archie HolmesProfessor and Executive Vice Chancellor for Academic AffairsEmail verificata su utsystem.edu
shiyu xieCardiff University

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Jo Shien Ng

Professor of Semiconductor Devices, University of Sheffield

Email verificata su sheffield.ac.uk - Home page

semiconductor photodiodes avalanche breakdown single photon avalanche diode


Titolo Ordina per citazioni Ordina per anno Ordina per titolo	Citata da Citata da	Anno
Improved performance of 1.3 μm multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer HY Liu, IR Sellers, TJ Badcock, DJ Mowbray, MS Skolnick, KM Groom, ... Applied Physics Letters 85 (5), 704-706, 2004	340	2004
Design and performance of an InGaAs-InP single-photon avalanche diode detector S Pellegrini, RE Warburton, LJJ Tan, JS Ng, AB Krysa, K Groom, ... IEEE journal of quantum electronics 42 (4), 397-403, 2006	186	2006
Room-temperature 1.6 μm light emission from InAs∕ GaAs quantum dots with a thin GaAsSb cap layer HY Liu, MJ Steer, TJ Badcock, DJ Mowbray, MS Skolnick, F Suarez, ... Journal of applied physics 99 (4), 2006	131	2006
Impact ionization coefficients in 4H-SiC WS Loh, BK Ng, JS Ng, SI Soloviev, HY Cha, PM Sandvik, CM Johnson, ... IEEE Transactions on electron devices 55 (8), 1984-1990, 2008	111	2008
Excess avalanche noise in In0. 52Al0. 48As YL Goh, ARJ MARSHALL, DJ Massey, JS Ng, CH Tan, M Hopkinson IEEE journal of quantum electronics 43 (5-6), 503-507, 2007	107	2007
Localization effects and band gap of GaAsBi alloys AR Mohmad, F Bastiman, CJ Hunter, RD Richards, SJ Sweeney, JS Ng, ... physica status solidi (b) 251 (6), 1276-1281, 2014	106	2014
Temperature dependence of avalanche breakdown in InP and InAlAs LJJ Tan, DSG Ong, JS Ng, CH Tan, SK Jones, Y Qian, JPR David IEEE Journal of Quantum Electronics 46 (8), 1153-1157, 2010	101	2010
The effect of Bi composition to the optical quality of GaAs1− xBix AR Mohmad, F Bastiman, CJ Hunter, JS Ng, SJ Sweeney, JPR David Applied Physics Letters 99 (4), 2011	87	2011
Avalanche multiplication in InAlAs YL Goh, DJ Massey, ARJ Marshall, JS Ng, CH Tan, WK Ng, GJ Rees, ... IEEE Transactions on Electron Devices 54 (1), 11-16, 2006	85	2006
Avalanche noise characteristics in submicron InP diodes LJJ Tan, JS Ng, CH Tan, JPR David IEEE Journal of Quantum Electronics 44 (4), 378-382, 2008	84	2008
Effects of rapid thermal annealing on GaAs1-xBix alloys AR Mohmad, F Bastiman, CJ Hunter, R Richards, SJ Sweeney, JS Ng, ... Applied Physics Letters 101 (1), 2012	80	2012
Single-photon detection for long-range imaging and sensing RH Hadfield, J Leach, F Fleming, DJ Paul, CH Tan, JS Ng, RK Henderson, ... Optica 10 (9), 1124-1141, 2023	76	2023
Absorption Characteristics ofDiodes in the Near-Infrared CJ Hunter, F Bastiman, AR Mohmad, R Richards, JS Ng, SJ Sweeney, ... IEEE Photonics Technology Letters 24 (23), 2191-2194, 2012	73	2012
Non-stoichiometric GaAsBi/GaAs (100) molecular beam epitaxy growth F Bastiman, ARB Mohmad, JS Ng, JPR David, SJ Sweeney Journal of crystal growth 338 (1), 57-61, 2012	67	2012
Field dependence of impact ionization coefficients in In/sub 0.53/Ga/sub 0.47/As JS Ng, CH Tan, JPR David, G Hill, GJ Rees IEEE Transactions on Electron Devices 50 (4), 901-905, 2003	65	2003
Effect of dead space on avalanche speed [APDs] JS Ng, CH Tan, BK Ng, PJ Hambleton, JPR David, GJ Rees, AH You, ... IEEE Transactions on Electron Devices 49 (4), 544-549, 2002	59	2002
Improving optical properties of 1.55 μm GaInNAs/GaAs multiple quantum wells with Ga (In) NAs barrier and space layer HY Liu, M Hopkinson, P Navaretti, M Gutierrez, JS Ng, JPR David Applied physics letters 83 (24), 4951-4953, 2003	54	2003
InGaAs/AlGaAsSb avalanche photodiode with high gain-bandwidth product S Xie, X Zhou, S Zhang, DJ Thomson, X Chen, GT Reed, JS Ng, CH Tan Optics express 24 (21), 24242-24247, 2016	51	2016
Temperature dependence of AlGaAs soft X-ray detectors AM Barnett, DJ Bassford, JE Lees, JS Ng, CH Tan, JPR David Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2010	47	2010
Photoluminescence investigation of high quality GaAs1− xBix on GaAs AR Mohmad, F Bastiman, JS Ng, SJ Sweeney, JPR David Applied Physics Letters 98 (12), 2011	45	2011

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