Articoli con mandati relativi all'accesso pubblico - Zihao DengUlteriori informazioni
Non disponibile pubblicamente: 1
Nanophotonic control of thermal emission under extreme temperatures in air
S McSherry, M Webb, J Kaufman, Z Deng, A Davoodabadi, T Ma, ...
Nature Nanotechnology 17 (10), 1104-1110, 2022
Mandati: US National Science Foundation, US Department of Energy, US Department of …
Disponibili pubblicamente: 11
Alloy-free band gap tuning across the visible spectrum
RA Makin, K York, SM Durbin, N Senabulya, J Mathis, R Clarke, ...
Physical Review Letters 122 (25), 256403, 2019
Mandati: US National Science Foundation, US Department of Energy, Agence Nationale de …
Toward the predictive discovery of ambipolarly dopable ultra-wide-band-gap semiconductors: The case of rutile GeO2
S Chae, K Mengle, K Bushick, J Lee, N Sanders, Z Deng, Z Mi, ...
Applied Physics Letters 118 (26), 2021
Mandati: US National Science Foundation, US Department of Energy
Boron arsenide heterostructures: lattice-matched heterointerfaces and strain effects on band alignments and mobility
K Bushick, S Chae, Z Deng, JT Heron, E Kioupakis
npj Computational Materials 6 (1), 3, 2020
Mandati: US National Science Foundation, US Department of Energy
Semiconducting high-entropy chalcogenide alloys with ambi-ionic entropy stabilization and ambipolar doping
Z Deng, A Olvera, J Casamento, JS Lopez, L Williams, R Lu, G Shi, ...
Chemistry of Materials 32 (14), 6070–6077, 2020
Mandati: US National Science Foundation, US Department of Energy
Enhanced doping efficiency of ultrawide band gap semiconductors by metal-semiconductor junction assisted epitaxy
A Pandey, X Liu, Z Deng, WJ Shin, DA Laleyan, K Mashooq, ET Reid, ...
Physical Review Materials 3 (5), 053401, 2019
Mandati: US National Science Foundation, US Department of Energy
Controlling Defect Formation of Nanoscale AlN: Toward Efficient Current Conduction of Ultrawide‐Bandgap Semiconductors
Y Wu, DA Laleyan, Z Deng, C Ahn, AF Aiello, A Pandey, X Liu, P Wang, ...
Advanced Electronic Materials 6 (9), 2000337, 2020
Mandati: US National Science Foundation, US Department of Energy, US Department of …
High electron mobility of AlxGa1− xN evaluated by unfolding the DFT band structure
N Pant, Z Deng, E Kioupakis
Applied Physics Letters 117 (24), 2020
Mandati: US Department of Energy, Natural Sciences and Engineering Research Council …
Experimental and theoretical study of hole scattering in RF sputtered p-type Cu2O thin films
J Jo, Z Deng, N Sanders, E Kioupakis, RL Peterson
Applied Physics Letters 120 (11), 2022
Mandati: US Department of Energy
Cation-size mismatch as a predictive descriptor for structural distortion, configurational disorder, and valence-band splitting in II-IV-N2 semiconductors
M Kute, Z Deng, S Chae, E Kioupakis
Applied Physics Letters 119 (13), 2021
Mandati: US National Science Foundation, US Department of Energy
Semiconducting character of LaN: Magnitude of the bandgap and origin of the electrical conductivity
Z Deng, E Kioupakis
AIP Advances 11 (6), 2021
Mandati: US National Science Foundation, US Department of Energy
Geometric defects induced by strain relaxation in thin film oxide superlattices
M Webb, T Ma, AH Hunter, S McSherry, J Kaufman, Z Deng, WB Carter, ...
Journal of Applied Physics 132 (18), 2022
Mandati: US Department of Defense
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