| A leaky‐integrate‐and‐fire neuron analog realized with a Mott insulator P Stoliar, J Tranchant, B Corraze, E Janod, MP Besland, F Tesler, ... Advanced Functional Materials 27 (11), 1604740, 2017 | 273 | 2017 |
| Resistive switching in Mott insulators and correlated systems E Janod, J Tranchant, B Corraze, M Querré, P Stoliar, M Rozenberg, ... Advanced Functional Materials 25 (40), 6287-6305, 2015 | 203 | 2015 |
| Thermal conductivity of aluminium nitride thin films prepared by reactive magnetron sputtering C Duquenne, MP Besland, PY Tessier, E Gautron, Y Scudeller, D Averty Journal of Physics D: Applied Physics 45 (1), 015301, 2011 | 132 | 2011 |
| Impedance and electric modulus study of amorphous TiTaO thin films: highlight of the interphase effect A Rouahi, A Kahouli, F Challali, MP Besland, C Vallée, B Yangui, ... Journal of Physics D: Applied Physics 46 (6), 065308, 2013 | 90 | 2013 |
| Reactive ion etching of sol–gel-processed SnO2 transparent conducting oxide as a new material for organic light emitting diodes D Vaufrey, MB Khalifa, MP Besland, C Sandu, MG Blanchin, ... Synthetic Metals 127 (1-3), 207-211, 2002 | 62 | 2002 |
| How a dc electric field drives Mott insulators out of equilibrium P Diener, E Janod, B Corraze, M Querré, C Adda, M Guilloux-Viry, ... Physical Review Letters 121 (1), 016601, 2018 | 61 | 2018 |
| Effect of RF sputtering power and vacuum annealing on the properties of AZO thin films prepared from ceramic target in confocal configuration F Challali, D Mendil, T Touam, T Chauveau, V Bockelée, AG Sanchez, ... Materials Science in Semiconductor Processing 118, 105217, 2020 | 59 | 2020 |
| TEM and XPS studies on CdS/CIGS interfaces J Han, C Liao, L Cha, T Jiang, H Xie, K Zhao, MP Besland Journal of Physics and Chemistry of Solids 75 (12), 1279-1283, 2014 | 57 | 2014 |
| Thickness and substrate effects on AlN thin film growth at room temperature B Abdallah, C Duquenne, MP Besland, E Gautron, PY Jouan, PY Tessier, ... The European Physical Journal Applied Physics 43 (03), 309-313, 2008 | 53 | 2008 |
| Impact of magnetron configuration on plasma and film properties of sputtered aluminum nitride thin films C Duquenne, PY Tessier, MP Besland, B Angleraud, PY Jouan, R Aubry, ... Journal of Applied Physics 104 (6), 2008 | 51 | 2008 |
| Preparation and characterization of ZnS/CdS bi-layer for CdTe solar cell application J Han, G Fu, V Krishnakumar, C Liao, W Jaegermann, MP Besland Journal of physics and chemistry of solids 74 (12), 1879-1883, 2013 | 47 | 2013 |
| Electrical and optical characteristics of indium tin oxide thin films deposited by cathodic sputtering for top emitting organic electroluminescent devices D Vaufrey, MB Khalifa, MP Besland, J Tardy, C Sandu, MG Blanchin, ... Materials Science and Engineering: C 21 (1-2), 265-271, 2002 | 45 | 2002 |
| Passivation of InP using In(PO3)3‐condensed phosphates: From oxide growth properties to metal‐insulator‐semiconductor field‐effect‐transistor devices Y Robach, MP Besland, J Joseph, G Hollinger, P Viktorovitch, P Ferret, ... Journal of applied physics 71 (6), 2981-2992, 1992 | 45 | 1992 |
| Membrane filter S Galaj, MP Besland, A Wicker, J Gillot, R Soria US Patent 4,946,592, 1990 | 45 | 1990 |
| Evidence for a new passivating indium rich phosphate prepared by ultraviolet/ozone oxidation of InP G Hollinger, D Gallet, M Gendry, MP Besland, J Joseph Applied physics letters 59 (13), 1617-1619, 1991 | 44 | 1991 |
| Different threshold and bipolar resistive switching mechanisms in reactively sputtered amorphous undoped and Cr-doped vanadium oxide thin films JAJ Rupp, M Querré, A Kindsmüller, MP Besland, E Janod, R Dittmann, ... Journal of Applied Physics 123 (4), 2018 | 42 | 2018 |
| Mott insulators: A large class of materials for Leaky Integrate and Fire (LIF) artificial neuron C Adda, B Corraze, P Stoliar, P Diener, J Tranchant, A Filatre-Furcate, ... Journal of Applied Physics 124 (15), 2018 | 38 | 2018 |
| Silicon nitride thin films deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition M Lapeyrade, MP Besland, C Meva’a, A Sibai, G Hollinger Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 17 (2 …, 1999 | 38 | 1999 |
| Effect of surface preparation and interfacial layer on the quality of SiO2/GaN interfaces EA Alam, I Cortes, MP Besland, A Goullet, L Lajaunie, P Regreny, ... Journal of Applied Physics 109 (8), 2011 | 37 | 2011 |
| Comparison of lanthanum substituted bismuth titanate (BLT) thin films deposited by sputtering and pulsed laser deposition MP Besland, D Aissa, PRJ Barroy, S Lafane, PY Tessier, B Angleraud, ... Thin solid films 495 (1), 86-91, 2006 | 37 | 2006 |
Etienne JanodInstitut des Materiaux Jean RouxelEmail verificata su cnrs-imn.fr