The PSA−/lo prostate cancer cell population harbors self-renewing long-term tumor-propagating cells that resist castration J Qin, X Liu, B Laffin, X Chen, G Choy, CR Jeter, T Calhoun-Davis, H Li, ...
Cell stem cell 10 (5), 556-569, 2012
366 2012 Vibrational properties and structure of undoped and Al-doped ZnO films deposited by RF magnetron sputtering M Tzolov, N Tzenov, D Dimova-Malinovska, M Kalitzova, C Pizzuto, ...
Thin solid films 379 (1-2), 28-36, 2000
296 2000 High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide R Nagy, M Niethammer, M Widmann, YC Chen, P Udvarhelyi, C Bonato, ...
Nature communications 10 (1), 1-8, 2019
276 2019 Growth of SiC by “Hot‐Wall” CVD and HTCVD O Kordina, C Hallin, A Henry, JP Bergman, I Ivanov, A Ellison, NT Son, ...
physica status solidi (b) 202 (1), 321-334, 1997
196 1997 High temperature chemical vapor deposition of SiC O Kordina, C Hallin, A Ellison, AS Bakin, IG Ivanov, A Henry, R Yakimova, ...
Applied physics letters 69 (10), 1456-1458, 1996
185 1996 Annealing effects on optical properties of low temperature grown ZnO nanorod arrays LL Yang, QX Zhao, M Willander, JH Yang, I Ivanov
Journal of Applied Physics 105 (5), 2009
183 2009 Developing silicon carbide for quantum spintronics NT Son, CP Anderson, A Bourassa, KC Miao, C Babin, M Widmann, ...
Applied Physics Letters 116 (19), 2020
177 2020 Reactive magnetron sputter deposition of CNx films on Si (001) substrates: film growth, microstructure and mechanical properties H Sjöström, I Ivanov, M Johansson, L Hultman, JE Sundgren, ...
Thin Solid Films 246 (1-2), 103-109, 1994
173 1994 Quantum properties of dichroic silicon vacancies in silicon carbide R Nagy, M Widmann, M Niethammer, DBR Dasari, I Gerhardt, ÖO Soykal, ...
Physical Review Applied 9 (3), 034022, 2018
151 2018 Nitrogen doping concentration as determined by photoluminescence in 4H–and 6H–SiC IG Ivanov, C Hallin, A Henry, O Kordina, E Janzén
Journal of applied physics 80 (6), 3504-3508, 1996
119 1996 Properties of molecular-beam epitaxy-grown GaNAs from optical spectroscopy G Pozina, I Ivanov, B Monemar, JV Thordson, TG Andersson
Journal of applied physics 84 (7), 3830-3835, 1998
118 1998 Properties of the T Egilsson, JP Bergman, IG Ivanov, A Henry, E Janzén
Physical Review B 59 (3), 1956, 1999
114 1999 Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC S Kamiyama, T Maeda, Y Nakamura, M Iwaya, H Amano, I Akasaki, ...
Journal of applied physics 99 (9), 2006
111 2006 Correlation between the antisite pair and the A Gali, P Deák, E Rauls, NT Son, IG Ivanov, FHC Carlsson, E Janzén, ...
Physical Review B 67 (15), 155203, 2003
99 2003 Growth of thick GaN layers with hydride vapour phase epitaxy B Monemar, H Larsson, C Hemmingsson, IG Ivanov, D Gogova
Journal of crystal growth 281 (1), 17-31, 2005
92 2005 Electrical charge state manipulation of single silicon vacancies in a silicon carbide quantum optoelectronic device M Widmann, M Niethammer, DY Fedyanin, IA Khramtsov, T Rendler, ...
Nano letters 19 (10), 7173-7180, 2019
88 2019 Liquid phase epitaxial growth of SiC M Syväjärvi, R Yakimova, HH Radamson, NT Son, Q Wahab, IG Ivanov, ...
Journal of Crystal Growth 197 (1-2), 147-154, 1999
85 1999 Photoluminescence of electron-irradiated T Egilsson, A Henry, IG Ivanov, JL Lindström, E Janzén
Physical Review B 59 (12), 8008, 1999
84 1999 Extensional rheology of polypropylene melts from the Rheotens test S Muke, I Ivanov, N Kao, SN Bhattacharya
Journal of non-newtonian fluid mechanics 101 (1-3), 77-93, 2001
83 2001 Ionization energies of phosphorus and nitrogen donors and aluminum acceptors in IG Ivanov, A Henry, E Janzén
Physical Review B—Condensed Matter and Materials Physics 71 (24), 241201, 2005
79 2005 