A systematic study of (NH4) 2S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0. 53Ga0. 47As/InP system for n-type and p-type In0. 53Ga0. 47As … É O’Connor, B Brennan, V Djara, K Cherkaoui, S Monaghan, ...
Journal of Applied Physics 109 (2), 2011
172 2011 Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures S Monaghan, PK Hurley, K Cherkaoui, MA Negara, A Schenk
Solid-State Electronics 53 (4), 438-444, 2009
168 2009 Navigation aids in the search for future high-k dielectrics: Physical and electrical trends O Engström, B Raeissi, S Hall, O Buiu, MC Lemme, HDB Gottlob, ...
Solid-State Electronics 51 (4), 622-626, 2007
168 2007 Temperature and frequency dependent electrical characterization of HfO2/InxGa1− xAs interfaces using capacitance-voltage and conductance methods É O’Connor, S Monaghan, RD Long, A O’Mahony, IM Povey, K Cherkaoui, ...
Applied Physics Letters 94 (10), 2009
128 2009 Electrical, structural, and chemical properties of HfO2 films formed by electron beam evaporation K Cherkaoui, S Monaghan, MA Negara, M Modreanu, PK Hurley, ...
Journal of Applied Physics 104 (6), 2008
88 2008 Insights into Multilevel Resistive Switching in Monolayer MoS2 S Bhattacharjee, E Caruso, N McEvoy, C Ó Coileáin, K O’Neill, L Ansari, ...
ACS applied materials & interfaces 12 (5), 6022-6029, 2020
81 2020 In situ H2S passivation of In0. 53Ga0. 47As∕ InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric E O’Connor, RD Long, K Cherkaoui, KK Thomas, F Chalvet, IM Povey, ...
Applied Physics Letters 92 (2), 2008
73 2008 An investigation of capacitance-voltage hysteresis in metal/high-k/In0. 53Ga0. 47As metal-oxide-semiconductor capacitors J Lin, YY Gomeniuk, S Monaghan, IM Povey, K Cherkaoui, É O'Connor, ...
Journal of Applied Physics 114 (14), 2013
70 2013 Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0. 53Ga0. 47As/InP capacitors following an optimized (NH4) 2S treatment É O’Connor, S Monaghan, K Cherkaoui, IM Povey, PK Hurley
Applied Physics Letters 99 (21), 2011
66 2011 Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0. 53Ga0. 47As capacitors with and without an Al2O3 interface control layer A O’Mahony, S Monaghan, G Provenzano, IM Povey, MG Nolan, ...
Applied Physics Letters 97 (5), 2010
66 2010 Impact of forming gas annealing on the performance of surface-channel In0. 53Ga0. 47As MOSFETs with an ALD Al2O3 gate dielectric V Djara, K Cherkaoui, M Schmidt, S Monaghan, É O'Connor, I Povey, ...
Institute of Electrical and Electronics Engineers (IEEE), 2012
65 2012 Interface Defects in HfO2, LaSiO x, and Gd2O3 High-k/Metal–Gate Structures on Silicon PK Hurley, K Cherkaoui, E O’connor, MC Lemme, HDB Gottlob, ...
Journal of the Electrochemical Society 155 (2), G13, 2007
64 2007 The Characterization and Passivation of Fixed Oxide Charges and Interface States in the PK Hurley, É O'Connor, V Djara, S Monaghan, IM Povey, RD Long, ...
IEEE Transactions on Device and Materials Reliability 13 (4), 429-443, 2013
57 2013 Impact of H2/N2 annealing on interface defect densities in Si (100)/SiO2/HfO2/TiN gate stacks M Schmidt, MC Lemme, H Kurz, T Witters, T Schram, K Cherkaoui, ...
Microelectronic engineering 80, 70-73, 2005
55 2005 Traps in undoped semi‐insulating InP obtained by high temperature annealing G Marrakchi, K Cherkaoui, A Karoui, G Hirt, G Müller
Journal of applied physics 79 (9), 6947-6950, 1996
48 1996 Junctionless nanowire transistors for 3d monolithic integration of cmos inverters P Hurley, K Cherkaoui, V Djara
US Patent App. 14/782,570, 2016
42 2016 Electron mobility in heavily doped junctionless nanowire SOI MOSFETs T Rudenko, A Nazarov, R Yu, S Barraud, K Cherkaoui, P Razavi, G Fagas
Microelectronic Engineering 109, 326-329, 2013
41 2013 Electrical analysis of three-stage passivated In0. 53Ga0. 47As capacitors with varying HfO2 thicknesses and incorporating an Al2O3 interface control layer S Monaghan, A O’Mahony, K Cherkaoui, É O’Connor, IM Povey, ...
Journal of Vacuum Science & Technology B 29 (1), 2011
41 2011 Properties of Cd1− xZnxTe crystals grown by high pressure Bridgman for nuclear detection P Fougeres, M Hage-Ali, JM Koebel, P Siffert, S Hassan, A Lusson, ...
Journal of crystal growth 184, 1313-1318, 1998
40 1998 Characterization of germanium/silicon p–n junction fabricated by low temperature direct wafer bonding and layer exfoliation F Gity, K Yeol Byun, KH Lee, K Cherkaoui, JM Hayes, AP Morrison, ...
Applied Physics Letters 100 (9), 2012
39 2012 
pk hurleyTyndall National Institute, University College CorkEmail verificata su tyndall.ie