PSP: An advanced surface-potential-based MOSFET model for circuit simulation G Gildenblat, X Li, W Wu, H Wang, A Jha, R Van Langevelde, GDJ Smit, ...
IEEE Transactions on Electron Devices 53 (9), 1979-1993, 2006
486 2006 Scaling of nano-Schottky-diodes GDJ Smit, S Rogge, TM Klapwijk
Applied Physics Letters 81 (20), 3852-3854, 2002
317 2002 Enhanced tunneling across nanometer-scale metal–semiconductor interfaces GDJ Smit, S Rogge, TM Klapwijk
Applied Physics Letters 80 (14), 2568-2570, 2002
163 2002 Best practices for compact modeling in Verilog-A CC McAndrew, GJ Coram, KK Gullapalli, JR Jones, LW Nagel, AS Roy, ...
IEEE Journal of the Electron Devices Society 3 (5), 383-396, 2015
127 2015 Experimental assessment of self-heating in SOI FinFETs AJ Scholten, GDJ Smit, RMT Pijper, LF Tiemeijer, HP Tuinhout, ...
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
97 2009 RF-noise modeling in advanced CMOS technologies GDJ Smit, AJ Scholten, RMT Pijper, LF Tiemeijer, R van der Toorn, ...
IEEE Transactions on Electron Devices 61 (2), 245-254, 2013
61 2013 Gate-induced ionization of single dopant atoms GDJ Smit, S Rogge, J Caro, TM Klapwijk
Physical Review B 68 (19), 193302, 2003
58 2003 A unified nonquasi-static MOSFET model for large-signal and small-signal simulations H Wang, X Li, W Wu, G Gildenblat, R Van Langevelde, GDJ Smit, ...
IEEE transactions on electron devices 53 (9), 2035-2043, 2006
55 2006 Introduction to PSP MOSFET model G Gildenblat, X Li, H Wang, W Wu, R Van Langevelde, AJ Scholten, ...
Proc. the MSM 2005 Int. Conf., Nanotech 2005, 2005
55 2005 Stark effect in shallow impurities in GDJ Smit, S Rogge, J Caro, TM Klapwijk
Physical Review B—Condensed Matter and Materials Physics 70 (3), 035206, 2004
55 2004 The new CMC standard compact MOS model PSP: Advantages for RF applications AJ Scholten, GDJ Smit, BA De Vries, LF Tiemeijer, JA Croon, ...
IEEE Journal of Solid-State Circuits 44 (5), 1415-1424, 2009
52 2009 The physical background of JUNCAP2 AJ Scholten, GDJ Smit, M Durand, R Van Langevelde, DBM Klaassen
IEEE transactions on electron devices 53 (9), 2098-2107, 2006
50 2006 PSP-based scalable compact FinFET model GDJ Smit, AJ Scholten, G Curatola, R Van Langevelde, G Gildenblat, ...
Proc. Nanotech, 520-525, 2007
46 2007 Benchmark tests for MOSFET compact models with application to the PSP model X Li, W Wu, A Jha, G Gildenblat, R van Langevelde, GDJ Smit, ...
IEEE Transactions on Electron Devices 56 (2), 243-251, 2009
43 2009 The relation between degradation under DC and RF stress conditions AJ Scholten, D Stephens, GDJ Smit, GT Sasse, J Bisschop
IEEE Transactions on Electron Devices 58 (8), 2721-2728, 2011
42 2011 PSP-based compact FinFET model describing dc and RF measurements GDJ Smit, AJ Scholten, N Serra, RMT Pijper, R van Langevelde, ...
2006 International Electron Devices Meeting, 1-4, 2006
41 2006 Scaling of micro-fabricated nanometer-sized Schottky diodes GDJ Smit, MG Flokstra, S Rogge, TM Klapwijk
Microelectronic Engineering 64 (1-4), 429-433, 2002
35 2002 Symmetric linearization method for double-gate and surrounding-gate MOSFET models G Dessai, A Dey, G Gildenblat, GDJ Smit
Solid-state electronics 53 (5), 548-556, 2009
33 2009 Surface-potential-based compact model of bulk MOSFET G Gildenblat, W Wu, X Li, R van Langevelde, AJ Scholten, GDJ Smit, ...
Compact Modeling: Principles, Techniques and Applications, 3-40, 2010
31 2010 PSP-SOI: An advanced surface potential based compact model of partially depleted SOI MOSFETs for circuit simulations W Wu, X Li, G Gildenblat, GO Workman, S Veeraraghavan, CC McAndrew, ...
Solid-State Electronics 53 (1), 18-29, 2009
28 2009 
Jurriaan SchmitzMESA+ Institute for Nanotechnology, University of TwenteEmail verificata su utwente.nl