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Christopher M. Neumann
Christopher M. Neumann
Intel
Email verificata su intel.com
Titolo
Citata da
Citata da
Anno
Phase-Change Memory—Towards a Storage-Class Memory
SW Fong, CM Neumann, HSP Wong
IEEE Transactions on Electron Devices 64 (11), 4374-4385, 2017
4332017
Energy Dissipation in Monolayer MoS2 Electronics
E Yalon, CJ McClellan, KKH Smithe, M Muñoz Rojo, RL Xu, ...
Nano Letters 17 (6), 3429–3433, 2017
2392017
Temperature-Dependent Thermal Boundary Conductance of Monolayer MoS2 by Raman Thermometry
E Yalon, B Aslan, KKH Smithe, CJ McClellan, SV Suryavanshi, F Xiong, ...
ACS applied materials & interfaces 9 (49), 43013-43020, 2017
1852017
Energy-Efficient Phase-Change Memory with Graphene as a Thermal Barrier
C Ahn, SW Fong, Y Kim, S Lee, A Sood, CM Neumann, M Asheghi, ...
Nano letters 15 (10), 6809-6814, 2015
1682015
Transport in nanoribbon interconnects obtained from graphene grown by chemical vapor deposition
A Behnam, AS Lyons, MH Bae, EK Chow, S Islam, CM Neumann, E Pop
Nano letters 12 (9), 4424-4430, 2012
1502012
Spatially resolved thermometry of resistive memory devices
E Yalon, S Deshmukh, MM Rojo, F Lian, CM Neumann, F Xiong, E Pop
Scientific Reports 7 (1), 15360, 2017
692017
Stanford memory trends
HSP Wong, C Ahn, J Cao, HY Chen, SW Fong, Z Jiang, C Neumann, ...
tech. report, 2016
602016
Engineering thermal and electrical interface properties of phase change memory with monolayer MoS2
CM Neumann, KL Okabe, E Yalon, RW Grady, HSP Wong, E Pop
Applied Physics Letters 114 (8), 2019
522019
Understanding the switching mechanism of interfacial phase change memory
KL Okabe, A Sood, E Yalon, CM Neumann, M Asheghi, E Pop, ...
Journal of Applied Physics 125 (18), 2019
462019
Towards ultimate scaling limits of phase-change memory
F Xiong, E Yalon, A Behnam, CM Neumann, KL Grosse, S Deshmukh, ...
2016 IEEE International Electron Devices Meeting (IEDM), 4.1. 1-4.1. 4, 2016
432016
Dual-Layer Dielectric Stack for Thermally Isolated Low-Energy Phase-Change Memory
SW Fong, CM Neumann, E Yalon, MM Rojo, E Pop, HSP Wong
IEEE Transactions on Electron Devices 64 (11), 4496-4502, 2017
392017
FeRAM using Anti-ferroelectric Capacitors for High-speed and High-density Embedded Memory
SC Chang, N Haratipour, S Shivaraman, C Neumann, S Atanasov, J Peck, ...
2021 IEEE International Electron Devices Meeting (IEDM), 33.2. 1-33.2. 4, 2021
352021
Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
CJ Brennan, CM Neumann, SA Vitale
Journal of Applied Physics 118 (4), 2015
222015
Hafnia-Based FeRAM: A Path Toward Ultra-High Density for Next-Generation High-Speed Embedded Memory
N Haratipour, SC Chang, S Shivaraman, C Neumann, YC Liao, ...
2022 International Electron Devices Meeting (IEDM), 6.7. 1-6.7. 4, 2022
212022
Uncovering Phase Change Memory Energy Limits by Sub‐Nanosecond Probing of Power Dissipation Dynamics
K Stern, N Wainstein, Y Keller, CM Neumann, E Pop, S Kvatinsky, E Yalon
Advanced Electronic Materials 7 (8), 2100217, 2021
162021
Graphene-based electromechanical thermal switches
ME Chen, MM Rojo, F Lian, J Koeln, A Sood, SM Bohaichuk, ...
2D Materials 8 (3), 035055, 2021
142021
Sub-Nanosecond Pulses Enable Partial Reset for Analog Phase Change Memory
K Stern, N Wainstein, Y Keller, CM Neumann, E Pop, S Kvatinsky, E Yalon
IEEE Electron Device Letters 42 (9), 1291-1294, 2021
132021
Molybdenum oxide on carbon nanotube: Doping stability and correlation with work function
RS Park, HJK Kim, G Pitner, C Neumann, S Mitra, HSP Wong
Journal of Applied Physics 128 (4), 2020
82020
Stateful Logic Using Phase Change Memory
B Hoffer, N Wainstein, CM Neumann, E Pop, E Yalon, S Kvatinsky
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 8 …, 2022
72022
Temperature-dependent thermal resistance of phase change memory
K Stern, Y Keller, CM Neumann, E Pop, E Yalon
Applied Physics Letters 120 (11), 2022
42022
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