Stability, reliability, and robustness of GaN power devices: A review JP Kozak, R Zhang, M Porter, Q Song, J Liu, B Wang, R Wang, W Saito, ... IEEE Transactions on Power Electronics 38 (7), 8442-8471, 2023 | 163 | 2023 |
True breakdown voltage and overvoltage margin of GaN power HEMTs in hard switching JP Kozak, R Zhang, Q Song, J Liu, W Saito, Y Zhang IEEE Electron Device Letters 42 (4), 505-508, 2021 | 70 | 2021 |
Dynamic breakdown voltage of GaN power HEMTs R Zhang, JP Kozak, Q Song, M Xiao, J Liu, Y Zhang 2020 IEEE International Electron Devices Meeting (IEDM), 23.3. 1-23.3. 4, 2020 | 68 | 2020 |
Robustness of cascode GaN HEMTs in unclamped inductive switching Q Song, R Zhang, JP Kozak, J Liu, Q Li, Y Zhang IEEE Transactions on Power Electronics 37 (4), 4148-4160, 2021 | 56 | 2021 |
Degradation and recovery of GaN HEMTs in overvoltage hard switching near breakdown voltage JP Kozak, Q Song, R Zhang, Y Ma, J Liu, Q Li, W Saito, Y Zhang IEEE Transactions on Power Electronics 38 (1), 435-446, 2022 | 34 | 2022 |
Dynamic gate breakdown of p-gate GaN HEMTs in inductive power switching B Wang, R Zhang, H Wang, Q He, Q Song, Q Li, F Udrea, Y Zhang IEEE Electron Device Letters 44 (2), 217-220, 2022 | 26 | 2022 |
Chip size minimization for wide and ultrawide bandgap power devices B Wang, M Xiao, Z Zhang, Y Wang, Y Qin, Q Song, GQ Lu, K Ngo, ... IEEE Transactions on Electron Devices 70 (2), 633-639, 2023 | 21 | 2023 |
Output capacitance loss of GaN HEMTs in steady-state switching Q Song, R Zhang, Q Li, Y Zhang IEEE Transactions on Power Electronics 39 (5), 5547-5557, 2023 | 20 | 2023 |
Robust avalanche in 1.7 kV vertical GaN diodes with a single-implant bevel edge termination M Xiao, Y Wang, R Zhang, Q Song, M Porter, E Carlson, K Cheng, K Ngo, ... IEEE Electron Device Letters, 2023 | 19 | 2023 |
Failure mechanisms of cascode GaN HEMTs under overvoltage and surge energy events Q Song, R Zhang, JP Kozak, J Liu, Q Li, Y Zhang 2021 IEEE International Reliability Physics Symposium (IRPS), 1-7, 2021 | 19 | 2021 |
Evaluation of 650V, 100A direct-drive GaN power switch for electric vehicle powertrain applications Q Song, JP Kozak, M Xiao, Y Ma, B Wang, R Zhang, R Volkov, K Smith, ... 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2021 | 16 | 2021 |
Robustness of cascode GaN HEMTs under repetitive overvoltage and surge energy stresses Q Song, R Zhang, JP Kozak, J Liu, Q Li, Y Zhang 2021 IEEE Applied Power Electronics Conference and Exposition (APEC), 363-369, 2021 | 16 | 2021 |
Robustness of GaN gate injection transistors under repetitive surge energy and overvoltage JP Kozak, Q Song, R Zhang, J Liu, Y Zhang 2021 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2021 | 16 | 2021 |
2 kV, 0.7 mΩ•cm2 Vertical Ga2O3 Superjunction Schottky Rectifier with Dynamic Robustness Y Qin, M Porter, M Xiao, Z Du, H Zhang, Y Ma, J Spencer, B Wang, ... 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | 15 | 2023 |
Hard-switched overvoltage robustness of p-gate GaN HEMTs at increasing temperatures JP Kozak, R Zhang, J Liu, Q Song, M Xiao, Y Zhang 2020 IEEE Energy Conversion Congress and Exposition (ECCE), 677-682, 2020 | 13 | 2020 |
Origin of soft-switching output capacitance loss in cascode GaN HEMTs at high frequencies Q Song, R Zhang, Q Li, Y Zhang IEEE Transactions on Power Electronics, 2023 | 12 | 2023 |
Dynamic RON Free 1.2 kV Vertical GaN JFET X Yang, R Zhang, B Wang, Q Song, A Walker, S Pidaparthi, C Drowley, ... IEEE, 2024 | 11 | 2024 |
Overvoltage robustness of p-Gate GaN HEMTs in high frequency switching up to megahertz R Zhang, Q Song, Q Li, Y Zhang IEEE Transactions on Power Electronics 38 (5), 6063-6072, 2023 | 11 | 2023 |
A simple and accurate method to characterize output capacitance losses of GaN HEMTs Q Song, R Zhang, Q Li, Y Zhang 2022 IEEE Energy Conversion Congress and Exposition (ECCE), 1-6, 2022 | 11 | 2022 |
Overvoltage ruggedness and dynamic breakdown voltage of p-gate GaN HEMTs in high-frequency switching up to megahertz R Zhang, Q Song, Q Li, Y Zhang 2022 IEEE Applied Power Electronics Conference and Exposition (APEC), 175-180, 2022 | 9 | 2022 |