| Transistors based on two-dimensional materials for future integrated circuits S Das, A Sebastian, E Pop, CJ McClellan, AD Franklin, T Grasser, ... Nature Electronics 4 (11), 786-799, 2021 | 649 | 2021 |
| Stochastic charge trapping in oxides: From random telegraph noise to bias temperature instabilities T Grasser Microelectronics Reliability 52 (1), 39-70, 2012 | 600 | 2012 |
| The paradigm shift in understanding the bias temperature instability: From reaction–diffusion to switching oxide traps T Grasser, B Kaczer, W Goes, H Reisinger, T Aichinger, P Hehenberger, ... IEEE Transactions on Electron Devices 58 (11), 3652-3666, 2011 | 541 | 2011 |
| Insulators for 2D nanoelectronics: the gap to bridge YY Illarionov, T Knobloch, M Jech, M Lanza, D Akinwande, MI Vexler, ... Nature communications 11 (1), 3385, 2020 | 428 | 2020 |
| Origin of NBTI variability in deeply scaled pFETs B Kaczer, T Grasser, PJ Roussel, J Franco, R Degraeve, LA Ragnarsson, ... 2010 IEEE International Reliability Physics Symposium, 26-32, 2010 | 383 | 2010 |
| A review of hydrodynamic and energy-transport models for semiconductor device simulation T Grasser, TW Tang, H Kosina, S Selberherr Proceedings of the IEEE 91 (2), 251-274, 2003 | 375 | 2003 |
| The time dependent defect spectroscopy (TDDS) for the characterization of the bias temperature instability T Grasser, H Reisinger, PJ Wagner, F Schanovsky, W Gös, B Kaczer 2010 IEEE international reliability physics symposium, 16-25, 2010 | 358 | 2010 |
| Ubiquitous relaxation in BTI stressing—New evaluation and insights B Kaczer, T Grasser, J Roussel, J Martin-Martinez, R O'Connor, ... 2008 IEEE International Reliability Physics Symposium, 20-27, 2008 | 311 | 2008 |
| A two-stage model for negative bias temperature instability T Grasser, B Kaczer, W Goes, T Aichinger, P Hehenberger, M Nelhiebel 2009 IEEE international reliability physics symposium, 33-44, 2009 | 300 | 2009 |
| The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials T Knobloch, YY Illarionov, F Ducry, C Schleich, S Wachter, K Watanabe, ... Nature Electronics 4 (2), 98-108, 2021 | 287 | 2021 |
| The statistical analysis of individual defects constituting NBTI and its implications for modeling DC-and AC-stress H Reisinger, T Grasser, W Gustin, C Schlünder 2010 IEEE International Reliability Physics Symposium, 7-15, 2010 | 270 | 2010 |
| Ultrathin calcium fluoride insulators for two-dimensional field-effect transistors YY Illarionov, AG Banshchikov, DK Polyushkin, S Wachter, T Knobloch, ... Nature Electronics 2 (6), 230-235, 2019 | 252 | 2019 |
| The role of charge trapping in MoS2/SiO2 and MoS2/hBN field-effect transistors YY Illarionov, G Rzepa, M Waltl, T Knobloch, A Grill, MM Furchi, T Mueller, ... 2D Materials 3 (3), 035004, 2016 | 241 | 2016 |
| Analytic modeling of the bias temperature instability using capture/emission time maps T Grasser, PJ Wagner, H Reisinger, T Aichinger, G Pobegen, M Nelhiebel, ... 2011 International Electron Devices Meeting, 27.4. 1-27.4. 4, 2011 | 220 | 2011 |
| The universality of NBTI relaxation and its implications for modeling and characterization T Grasser, W Gos, V Sverdlov, B Kaczer 2007 IEEE International Reliability Physics Symposium Proceedings. 45th …, 2007 | 208 | 2007 |
| Long-term stability and reliability of black phosphorus field-effect transistors YY Illarionov, M Waltl, G Rzepa, JS Kim, S Kim, A Dodabalapur, ... ACS nano 10 (10), 9543-9549, 2016 | 196 | 2016 |
| Comphy—A compact-physics framework for unified modeling of BTI G Rzepa, J Franco, B O’Sullivan, A Subirats, M Simicic, G Hellings, ... Microelectronics Reliability 85, 49-65, 2018 | 192 | 2018 |
| Bias temperature instability for devices and circuits T Grasser Springer Science & Business Media, 2013 | 185 | 2013 |
| Review on SiC MOSFETs high-voltage device reliability focusing on threshold voltage instability K Puschkarsky, T Grasser, T Aichinger, W Gustin, H Reisinger IEEE Transactions on Electron Devices 66 (11), 4604-4616, 2019 | 184 | 2019 |
| Time-dependent defect spectroscopy for characterization of border traps in metal-oxide-semiconductor transistors T Grasser, H Reisinger, PJ Wagner, B Kaczer Physical Review B—Condensed Matter and Materials Physics 82 (24), 245318, 2010 | 181 | 2010 |
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