Recombination activity of contaminated dislocations in silicon: A model describing electron-beam-induced current contrast behavior V Kveder, M Kittler, W Schröter
Physical Review B 63 (11), 115208, 2001
341 2001 Room-temperature silicon light-emitting diodes based on dislocation luminescence V Kveder, M Badylevich, E Steinman, A Izotov, M Seibt, W Schröter
Applied Physics Letters 84 (12), 2106-2108, 2004
255 2004 On the energy spectrum of dislocations in silicon VV Kveder, YA Osipyan, W Schröter, G Zoth
physica status solidi (a) 72 (2), 701-713, 1982
212 * 1982 Dislocation-related electroluminescence at room temperature in plastically deformed silicon VV Kveder, EA Steinman, SA Shevchenko, HG Grimmeiss
Physical Review B 51 (16), 10520, 1995
177 1995 Electronic states at dislocations and metal silicide precipitates in crystalline silicon and their role in solar cell materials M Seibt, R Khalil, V Kveder, W Schröter
Applied Physics A 96, 235-253, 2009
125 2009 Silicon light‐emitting diodes based on dislocation‐related luminescence V Kveder, M Badylevich, W Schröter, M Seibt, E Steinman, A Izotov
physica status solidi (a) 202 (5), 901-910, 2005
101 2005 Gettering in silicon photovoltaics: current state and future perspectives M Seibt, A Sattler, C Rudolf, O Voß, V Kveder, W Schröter
physica status solidi (a) 203 (4), 696-713, 2006
78 2006 Investigation of the energy spectrum and kinetic phenomena in dislocated Si crystals (I) VA Grazhulis, VV Kveder, V Yu. Mukhina
Physica status solidi (a) 43 (2), 407-415, 1977
72 1977 Structural and electrical properties of metal impurities at dislocations in silicon M Seibt, V Kveder, W Schröter, O Voß
physica status solidi (a) 202 (5), 911-920, 2005
66 2005 Spin‐resonant change of unlocking stress for dislocations in silicon MV Badylevich, VV Kveder, VI Orlov, YA Ossipyan
physica status solidi (c) 2 (6), 1869-1872, 2005
65 2005 Atomic structure and electronic states of nickel and copper silicides in silicon W Schröter, V Kveder, M Seibt, H Ewe, H Hedemann, F Riedel, A Sattler
Materials Science and Engineering: B 72 (2-3), 80-86, 2000
62 2000 Simulation of Al and phosphorus diffusion gettering in Si V Kveder, W Schröter, A Sattler, M Seibt
Materials Science and Engineering: B 71 (1-3), 175-181, 2000
59 2000 Dislocations in silicon and D-band luminescence for infrared light emitters VV Kveder, M Kittler
Materials Science Forum 590, 29-56, 2008
52 2008 Measurements of energy spectra of extended defects W Schröter, H Hedemann, V Kveder, F Riedel
Journal of Physics: Condensed Matter 14 (48), 13047, 2002
50 2002 Nonstoichiometry and electrocoloration due to injection of S Bredikhin, S Scharner, M Klingler, V Kveder, B Red’kin, W Weppner
Journal of Applied Physics 88 (10), 5687-5694, 2000
45 2000 Электронные свойства дислокаций в полупроводниках ЮА Осипьян, СИ Бредихин, ВВ Кведер, НВ Классен, ВД Негрий, ...
М.: Эдиториал УРСС 320, 3, 2000
44 2000 Hydrogen effect on the optical activity of dislocations in silicon introduced at room temperature T Sekiguchi, VV Kveder, K Sumino
Journal of Applied Physics 76 (12), 7882-7888, 1994
39 1994 Electronic properties of dislocations in semiconductors YA Osip’yan, SI Bredikhin, VV Kveder, NV Klassen, VD Negriœ, ...
Editorial URSS, Moscow, 152-310, 2000
38 2000 Electronic states associated with dislocations in p -type silicon studied by means of electric-dipole spin resonance and deep-level transient spectroscopy V Kveder, T Sekiguchi, K Sumino
Physical review B 51 (23), 16721, 1995
37 1995 Yu. A. Osip’yan, and AI Shalynin VV Kveder, AE Koshelev, T Mchedlidze
Zh. Éksp. Teor. Fiz 83 (2), 699, 1982
36 1982