Recommended methods to study resistive switching devices M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ...
Advanced Electronic Materials 5 (1), 1800143, 2019
656 2019 Three-dimensional observation of the conductive filament in nanoscaled resistive memory devices U Celano, L Goux, A Belmonte, K Opsomer, A Franquet, A Schulze, ...
Nano letters 14 (5), 2401-2406, 2014
376 2014 Intrinsic switching variability in HfO2 RRAM A Fantini, L Goux, R Degraeve, DJ Wouters, N Raghavan, G Kar, ...
2013 5th IEEE International Memory Workshop, 30-33, 2013
266 2013 Improvement of data retention in HfO2 /Hf 1T1R RRAM cell under low operating current YY Chen, M Komura, R Degraeve, B Govoreanu, L Goux, A Fantini, ...
2013 IEEE International Electron Devices Meeting, 10.1. 1-10.1. 4, 2013
147 2013 Causes and consequences of the stochastic aspect of filamentary RRAM R Degraeve, A Fantini, N Raghavan, L Goux, S Clima, B Govoreanu, ...
Microelectronic Engineering 147, 171-175, 2015
137 2015 Capacitor-less, long-retention (> 400s) DRAM cell paving the way towards low-power and high-density monolithic 3D DRAM A Belmonte, H Oh, N Rassoul, GL Donadio, J Mitard, H Dekkers, ...
2020 IEEE International Electron Devices Meeting (IEDM), 28.2. 1-28.2. 4, 2020
133 2020 A Thermally Stable and High-Performance 90-nm A Belmonte, W Kim, BT Chan, N Heylen, A Fantini, M Houssa, M Jurczak, ...
IEEE transactions on electron devices 60 (11), 3690-3695, 2013
85 2013 Understanding the dual nature of the filament dissolution in conductive bridging devices U Celano, L Goux, A Belmonte, K Opsomer, R Degraeve, C Detavernier, ...
The journal of physical chemistry letters 6 (10), 1919-1924, 2015
69 2015 Tailoring IGZO-TFT architecture for capacitorless DRAM, demonstrating > 103 s retention, >1011 cycles endurance and Lg scalability down to 14nm A Belmonte, H Oh, S Subhechha, N Rassoul, H Hody, H Dekkers, ...
2021 IEEE International Electron Devices Meeting (IEDM), 10.6. 1-10.6. 4, 2021
60 2021 Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories U Celano, G Giammaria, L Goux, A Belmonte, M Jurczak, W Vandervorst
Nanoscale 8 (29), 13915-13923, 2016
57 2016 Hourglass concept for RRAM: a dynamic and statistical device model R Degraeve, A Fantini, N Raghavan, L Goux, S Clima, YY Chen, ...
Proceedings of the 21th International Symposium on the Physical and Failure …, 2014
55 2014 First demonstration of sub-12 nm Lg gate last IGZO-TFTs with oxygen tunnel architecture for front gate devices S Subhechha, N Rassoul, A Belmonte, R Delhougne, K Banerjee, ...
2021 Symposium on VLSI Technology, 1-2, 2021
54 2021 RRAMs based on anionic and cationic switching: a short overview S Clima, K Sankaran, YY Chen, A Fantini, U Celano, A Belmonte, L Zhang, ...
physica status solidi (RRL)–Rapid Research Letters 8 (6), 501-511, 2014
54 2014 90nm W\Al2 O3 \TiW\Cu 1T1R CBRAM cell showing low-power, fast and disturb-free operation A Belmonte, W Kim, BT Chan, N Heylen, A Fantini, M Houssa, M Jurczak, ...
2013 5th IEEE International Memory Workshop, 26-29, 2013
47 2013 Tailoring switching and endurance / retention reliability characteristics of HfO2 / Hf RRAM with Ti, Al, Si dopants YY Chen, R Roelofs, A Redolfi, R Degraeve, D Crotti, A Fantini, S Clima, ...
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014
45 2014 Influence of carbon alloying on the thermal stability and resistive switching behavior of copper-telluride based CBRAM cells W Devulder, K Opsomer, F Seidel, A Belmonte, R Muller, B De Schutter, ...
ACS applied materials & interfaces 5 (15), 6984-6989, 2013
45 2013 A Sensitivity Map-Based Approach to Profile Defects in MIM Capacitors From A Padovani, B Kaczer, M Pešić, A Belmonte, M Popovici, L Nyns, D Linten, ...
IEEE Transactions on Electron Devices 66 (4), 1892-1898, 2019
42 2019 Conductive-AFM tomography for 3D filament observation in resistive switching devices U Celano, L Goux, A Belmonte, A Schulze, K Opsomer, C Detavernier, ...
2013 IEEE International Electron Devices Meeting, 21.6. 1-21.6. 4, 2013
42 2013 Origin of the current discretization in deep reset states of an Al2O3/Cu-based conductive-bridging memory, and impact on state level and variability A Belmonte, R Degraeve, A Fantini, W Kim, M Houssa, M Jurczak, L Goux
Applied Physics Letters 104 (23), 2014
38 2014 Understanding and modelling the PBTI reliability of thin-film IGZO transistors A Chasin, J Franco, K Triantopoulos, H Dekkers, N Rassoul, A Belmonte, ...
2021 IEEE International Electron Devices Meeting (IEDM), 31.1. 1-31.1. 4, 2021
37 2021