Articoli con mandati relativi all'accesso pubblico - Faiz ArithUlteriori informazioni
Non disponibili pubblicamente: 3
High-Mobility SiC MOSFETs Using a Thin-SiO2/Al2O3 Gate Stack
J Urresti, F Arith, K Vassilevski, AK Tiwari, S Olsen, NG Wright, AG O'Neill
Materials Science Forum 924, 494-497, 2018
Mandati: UK Engineering and Physical Sciences Research Council
High Mobility 4H-SiC MOSFET
A O’Neill, F Arith, J Urresti, K Vasilevskiy, N Wright, S Olsen
2018 14th IEEE International Conference on Solid-State and Integrated …, 2018
Mandati: UK Engineering and Physical Sciences Research Council
High Mobility 4H-SiC MOSFET Using a Thin SiO2/Al2O3 Gate Stack
F Arith, J Urrcsti, K Vasilevskiy, S Oisenl, N Wright, A O'Neill
2018 48th European Solid-State Device Research Conference (ESSDERC), 30-33, 2018
Mandati: UK Engineering and Physical Sciences Research Council
Disponibili pubblicamente: 2
Increased Mobility in Enhancement Mode 4H-SiC MOSFET Using a Thin SiO2 / Al2O3 Gate Stack
F Arith, J Urresti, K Vasilevskiy, S Olsen, N Wright, A O’Neill
IEEE Electron Device Letters 39 (4), 564-567, 2018
Mandati: UK Engineering and Physical Sciences Research Council
Design and Analysis of High Mobility Enhancement-Mode 4H-SiC MOSFETs Using a Thin-SiO2/Al2O3 Gate-Stack
J Urresti, F Arith, S Olsen, N Wright, A O’Neill
IEEE Transactions on Electron Devices 66 (4), 1710-1716, 2019
Mandati: UK Engineering and Physical Sciences Research Council
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