| Few-Layer MoS2 p-Type Devices Enabled by Selective Doping Using Low Energy Phosphorus Implantation A Nipane, D Karmakar, N Kaushik, S Karande, S Lodha ACS nano 10 (2), 2128-2137, 2016 | 403 | 2016 |
| Schottky barrier heights for Au and Pd contacts to MoS2 N Kaushik, A Nipane, F Basheer, S Dubey, S Grover, MM Deshmukh, ... Applied Physics Letters 105 (11), 2014 | 300 | 2014 |
| Interfacial n-Doping Using an Ultrathin TiO2 Layer for Contact Resistance Reduction in MoS2 N Kaushik, D Karmakar, A Nipane, S Karande, S Lodha ACS applied materials & interfaces 8 (1), 256-263, 2016 | 153 | 2016 |
| Reversible hysteresis inversion in MoS2 field effect transistors N Kaushik, DMA Mackenzie, K Thakar, N Goyal, B Mukherjee, P Boggild, ... npj 2D Materials and Applications 1 (1), 34, 2017 | 112 | 2017 |
| Multilayer ReS2 Photodetectors with Gate Tunability for High Responsivity and High-Speed Applications K Thakar, B Mukherjee, S Grover, N Kaushik, M Deshmukh, S Lodha ACS applied materials & interfaces 10 (42), 36512-36522, 2018 | 102 | 2018 |
| Exciton Emission Intensity Modulation of Monolayer MoS2 via Au Plasmon Coupling B Mukherjee, N Kaushik, RPN Tripathi, AM Joseph, PK Mohapatra, ... Scientific reports 7 (1), 41175, 2017 | 61 | 2017 |
| Thickness tunable transport in alloyed WSSe field effect transistors SD Karande, N Kaushik, DS Narang, D Late, S Lodha Applied Physics Letters 109 (14), 2016 | 38 | 2016 |
| Enhanced stability and performance of few-layer black phosphorus transistors by electron beam irradiation N Goyal, N Kaushik, H Jawa, S Lodha Nanoscale 10 (24), 11616-11623, 2018 | 31 | 2018 |
| Low-Frequency Noise in Supported and Suspended MoS2Transistors N Kaushik, S Ghosh, S Lodha IEEE Transactions on Electron Devices 65 (10), 4135-4140, 2018 | 22 | 2018 |
| Performance projections for two-dimensional materials in radio-frequency applications S Singh, K Thakar, N Kaushik, B Muralidharan, S Lodha Physical Review Applied 10 (1), 014022, 2018 | 13 | 2018 |
| Evaluating Au and Pd contacts in mono and multilayer MoS2 transistors N Kaushik, A Nipane, F Basheer, S Dubey, S Grover, M Deshmukh, ... 72nd Device Research Conference, 195-196, 2014 | 13 | 2014 |
| P-type doping of MoS2 with phosphorus using a plasma immersion ion implantation (PIII) process A Nipane, N Kaushik, S Karande, D Karmakar, S Lodha 2015 73rd Annual Device Research Conference (DRC), 191-192, 2015 | 6 | 2015 |
| Microelectronic devices with vertically recessed channel structures and discrete, spaced inter-slit structures, and related methods and systems H Liu, Y Litao, A Fayrushin, N Kaushik, J Li, C Howder US Patent App. 17/158,888, 2022 | 4 | 2022 |
| Suspended ReS2 FET for improved photocurrent-time response B Mukherjee, K Thakar, N Kaushik, S Lodha 2017 75th Annual Device Research Conference (DRC), 1-2, 2017 | 4 | 2017 |
| Metal Contacts to MoS2 N Kaushik, S Grover, MM Deshmukh, S Lodha 2D Inorganic Materials beyond Graphene, 317-347, 2018 | 3 | 2018 |
| combinatorial effect of d-aminoacids and tetracycline against Pseudomonas aeruginosa biofilm H Jayalekshmi, C Harikrishnan, S Sali, N Kaushik, N Victus, R Anoop, ... Int J Pharm Pharmaceut Sci 8, 216-220, 2016 | 3 | 2016 |
| Contact resistance reduction in MoS2 FETs using ultra-thin TiO2 interfacial layers N Kaushik, A Nipane, S Karande, S Lodha 2015 73rd Annual Device Research Conference (DRC), 211-212, 2015 | 3 | 2015 |
| Methods of forming apparatuses including air gaps between conductive lines and related apparatuses, memory devices, and electronic systems S Gupta, DR Economy, RJ Hill, KA Ritter, N Kaushik US Patent 11,456,208, 2022 | 2 | 2022 |
| Semiconductor structure formation at differential depths VNK Neelapala, DC Pandey, N Kaushik US Patent 11,515,311, 2022 | 1 | 2022 |
| Low power and enhanced noise margins sram using novel asymmetric FinFETs N Kaushik, D Kaur, BK Kaushik 2012 International Conference on Communication Systems and Network …, 2012 | 1 | 2012 |
Saurabh LodhaP. K. Kelkar Chair Professor, Electrical Engineering, IIT BombayEmail verificata su ee.iitb.ac.in