| The influence of high energy electron irradiation on the Schottky barrier height and the Richardson constant of Ni/4H-SiC Schottky diodes E Omotoso, WE Meyer, FD Auret, AT Paradzah, M Diale, SMM Coelho, ... Materials Science in Semiconductor Processing 39, 112-118, 2015 | 75 | 2015 |
| Electrical characterization of 5.4 MeV alpha-particle irradiated 4H-SiC with low doping density AT Paradzah, FD Auret, MJ Legodi, E Omotoso, M Diale Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2015 | 34 | 2015 |
| Electrical characterization of deep levels created by bombarding nitrogen-doped 4H-SiC with alpha-particle irradiation E Omotoso, WE Meyer, FD Auret, AT Paradzah, MJ Legodi Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2016 | 32 | 2016 |
| Effects of 5.4 MeV alpha-particle irradiation on the electrical properties of nickel Schottky diodes on 4H–SiC E Omotoso, WE Meyer, FD Auret, AT Paradzah, M Diale, SMM Coelho, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2015 | 29 | 2015 |
| Electrical Characterization of High Energy Electron Irradiated Ni/4H-SiC Schottky Barrier Diodes AT Paradzah, E Omotoso, MJ Legodi, FD Auret, WE Meyer, M Diale Journal of Electronic Materials 45, 4177-4182, 2016 | 23 | 2016 |
| Electrical characterisation of deep level defects created by bombarding the n-type 4H-SiC with 1.8 MeV protons E Omotoso, AT Paradzah, PJJ van Rensburg, MJ Legodi, FD Auret, ... Surface and Coatings Technology 355, 2-6, 2018 | 12 | 2018 |
| Mono-doped and Co-doped nanostructured hematite for improved photoelectrochemical water splitting JS Nyarige, AT Paradzah, TPJ Krüger, M Diale Nanomaterials 12 (3), 366, 2022 | 9 | 2022 |
| Identification of exciton–exciton annihilation in hematite thin films AT Paradzah, KD Maabong, HMAM Elnour, A Singh, M Diale, TPJ Kruger The Journal of Physical Chemistry C 123 (30), 18676-18684, 2019 | 9 | 2019 |
| Determination of capture barrier energy of the E-center in palladium Schottky barrier diodes of antimony-doped germanium by varying the pulse width E Omotoso, AT Paradzah, E Igumbor, BA Taleatu, WE Meyer, FD Auret Materials Research Express 7 (2), 025901, 2020 | 7 | 2020 |
| Use of interfacial layers to prolong hole lifetimes in hematite probed by ultrafast transient absorption spectroscopy AT Paradzah, M Diale, K Maabong, TPJ Krüger Physica B: Condensed Matter 535, 138-142, 2018 | 7 | 2018 |
| Reduction of recombination rates due to volume increasing, annealing, and tetraethoxysilicate treatment in hematite thin films S Congolo, MJ Madito, AT Paradzah, AJ Harrison, H Elnour, TPJ Krüger, ... Applied Nanoscience 10, 1957-1967, 2020 | 4 | 2020 |
| Photoelectrochemical performance and ultrafast dynamics of photogenerated electrons and holes in highly titanium-doped hematite AT Paradzah, K Maabong-Tau, M Diale, TPJ Krüger Physical Chemistry Chemical Physics 22 (46), 27450-27457, 2020 | 3 | 2020 |
| Electrical characterization of electron irradiated and annealed lowly-doped 4H-SiC E Omotoso, AT Paradzah, MJ Legodi, M Diale, WE Meyer, FD Auret Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2017 | 3 | 2017 |
| Electrical Characterisation of Particle Irradiated 4H-SiC AT Paradzah University of Pretoria, 2014 | 1 | 2014 |
| IVT and DLTS characteristics of e-beam deposited W/Pd Schottky contacts on 4H-SiC AT Paradzah, MJ Legodi, FD Auret, MW Diale, WE Meyer | | |