Articoli con mandati relativi all'accesso pubblico - Akshay BalgarkashiUlteriori informazioni
Non disponibili pubblicamente: 14
Ultranarrow spectral response of InGaAs QDIPs through the optimization of strain-coupled stacks and capping layer composition
D Panda, A Balgarkashi, S Shetty, H Ghadi, B Tongbram, S Chakrabarti
Materials Science in Semiconductor Processing 60, 40-44, 2017
Mandati: Department of Science & Technology, India
Optimization of InAs quantum dots through growth interruption on InAs/GaAs quantum dot heterostructure
B Tongbram, A Ahmad, S Sengupta, A Mandal, J Singhal, A Balgarkashi, ...
Journal of Luminescence 192, 89-97, 2017
Mandati: Department of Science & Technology, India
Enhancement in peak detectivity and operating temperature of strain-coupled InAs/GaAs quantum dot infrared photodetectors by rapid thermal annealing
H Ghadi, S Shetty, S Adhikary, A Balgarkashi, A Manohar, S Chakrabarti
IEEE Transactions on Nanotechnology 14 (4), 668-672, 2015
Mandati: Department of Science & Technology, India
Vertical strain-induced dot size uniformity and thermal stability of InAs/GaAsN/GaAs coupled quantum dots
M Biswas, S Singh, A Balgarkashi, R Makkar, A Bhatnagar, S Sreedhara, ...
Journal of Alloys and Compounds 748, 601-607, 2018
Mandati: Department of Science & Technology, India
Defect annihilation-mediated enhanced activation energy of GaAs0. 979N0. 021-capped InAs/GaAs quantum dots by H− ion implantation
M Biswas, S Singh, A Balgarkashi, RL Makkar, A Bhatnagar, ...
Thin Solid Films 639, 73-77, 2017
Mandati: Department of Science & Technology, India
In0. 5Ga0. 5As bilayer quantum dot heterostructure for mid-infrared photodetection
D Panda, A Balgarkashi, SM Singh, S Shetty, H Rawool, S Chakrabarti
Infrared Physics & Technology 94, 263-266, 2018
Mandati: Department of Science & Technology, India
A detail investigation on quaternary and ternary capped strain coupled quantum dots based infrared photodetectors and effect of rapid thermal annealing temperature
H Ghadi, S Adhikary, S Shetty, A Balgarkashi, S Chakrabarti
Image Sensing Technologies: Materials, Devices, Systems, and Applications II …, 2015
Mandati: Department of Science & Technology, India
A low temperature investigation of the optical properties of coupled InAs quantum dots with GaAsN/GaAs spacers
A Balgarkashi, M Biswas, S Singh, D Das, A Bhatnagar, R Makkar, ...
Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XIV …, 2017
Mandati: Department of Science & Technology, India
Impact of rapid thermal annealing on dilute nitride (GaAsN) capped InAs/GaAs quantum dots exhibiting optical emission beyond~ 1.5 µm
M Biswas, A Balgarkashi, S Singh, N Shinde, RL Makkar, A Bhatnagar, ...
Nanophotonic Materials XIII 9919, 136-140, 2016
Mandati: Department of Science & Technology, India
Low-temperature photoluminescence studies in epitaxially-grown GaAsN/InAs/GaAsN quantum-dot-in-well structures emitting at 1.31 um
A Balgarkashi, M Biswas, S Singh, D Das, N Shinde, RL Makkar, ...
Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XIV …, 2017
Mandati: Department of Science & Technology, India
A low-temperature photoluminescence study of GaAs1-xNx/GaAs multiple quantum-wells
M Biswas, A Balgarkashi, S Singh, N Shinde, RL Makkar, A Bhatnagar, ...
Quantum Sensing and Nano Electronics and Photonics XIV 10111, 536-542, 2017
Mandati: Department of Science & Technology, India
A detailed investigation of the impact of varying number of dot layers in strain-coupled multistacked InAs/GaAs quantum dot heterostructures
D Panda, A Balgarkashi, S Shetty, H Ghadi, S Chakrabarti
Nanoengineering: Fabrication, Properties, Optics, and Devices XIII 9927, 198-202, 2016
Mandati: Department of Science & Technology, India
Growth strategy to achieve mono-modal quantum dot size distribution in InAs/GaAs multi stack coupled heterostructures
A Ahmad, D Panda, S Shetty, A Balgarkashi, S Chakrabarti
Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XIII …, 2016
Mandati: Department of Science & Technology, India
Effect of varying capping composition and number of strain-coupled stacks on In0. 5Ga0. 5As quantum dot infrared photodetectors
D Panda, S Shetty, A Balgarkashi, H Ghadi, N Sehara, S Chakrabarti
Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XIII …, 2016
Mandati: Department of Science & Technology, India
Disponibili pubblicamente: 14
Telecom-Wavelength Bottom-up Nanobeam Lasers on Silicon-on-Insulator
H Kim, WJ Lee, AC Farrell, A Balgarkashi, DL Huffaker
Nano Letters, DOI: 10.1021/acs.nanolett.7b01360, 2017
Mandati: US Department of Defense
III–V integration on Si (100): vertical nanospades
L Güniat, S Martí-Sánchez, O Garcia, M Boscardin, D Vindice, N Tappy, ...
ACS nano 13 (5), 5833-5840, 2019
Mandati: Swiss National Science Foundation, Banking Foundation "la Caixa", Government …
Optimization of dot layer periodicity through analysis of strain and electronic profile in vertically stacked InAs/GaAs Quantum dot heterostructure
D Panda, J Saha, A Balgarkashi, S Shetty, H Rawool, SM Singh, ...
Journal of Alloys and Compounds 736, 216-224, 2018
Mandati: Department of Science & Technology, India
Selective area epitaxy of GaAs: The unintuitive role of feature size and pitch
D Dede, F Glas, V Piazza, N Morgan, M Friedl, L Güniat, EN Dayi, ...
Nanotechnology 33 (48), 485604, 2022
Mandati: Swiss National Science Foundation
Single-Crystalline γ-Ga2S3 Nanotubes via Epitaxial Conversion of GaAs Nanowires
E Sutter, JS French, A Balgarkashi, N Tappy, A Fontcuberta i Morral, ...
Nano letters 19 (12), 8903-8910, 2019
Mandati: US National Science Foundation, US Department of Energy, Swiss National …
Optimizing dot-in-a-well infrared detector architecture for achieving high optical and device efficiency corroborated with theoretically simulated model
H Ghadi, J Patwari, P Murkute, D Das, PK Singh, S Dubey, M Bhatt, ...
Journal of Alloys and Compounds 751, 337-348, 2018
Mandati: Council of Scientific and Industrial Research, India, Department of Science …
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