Michael A Reshchikov

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Hadis MorkoçVirginia Commonwealth UniversityEmail verificata su vcu.edu
Vitaliy AvrutinVirginia Commonwealth UniversityEmail verificata su vcu.edu
Umit OzgurVirginia Commonwealth UniversityEmail verificata su vcu.edu
Ali TekeBalıkesir Üniversitesinde Fizik ProfesörüEmail verificata su balikesir.edu.tr
Denis DemchenkoAssistant Professor of Physics, Virginia Commonwealth UniversityEmail verificata su vcu.edu
Alison A. BaskiCal Poly PomonaEmail verificata su cpp.edu
Paolo VISCONTIDepartment of Innovation Engineering, University of SalentoEmail verificata su unisalento.it
F. Shadi Shahedipour-SandvikSUNY College of Nanoscale Science and EngineeringEmail verificata su sunypoly.edu
Jacek JasinskiConn Center for Renewable Energy Research, University of LouisvilleEmail verificata su louisville.edu
Mykhailo VorobiovCollege of Willaim & MaryEmail verificata su wm.edu
Oleksandr AndrieievVirginia Commonwealth UniversityEmail verificata su vcu.edu
Bruce WesselsNorthwestern UniversityEmail verificata su northwestern.edu
Andrey BakinProf. Dr., Technische Universität BraunschweigEmail verificata su tu-bs.de
Andreas WaagTechnische Universität BraunschweigEmail verificata su tu-braunschweig.de
Yong-Tae MoonLG ElectronicsEmail verificata su lge.com
Vincent MeyersSandia National LaboratoriesEmail verificata su sandia.gov
Gyuchul YiSeoul National University OR POSTECHEmail verificata su snu.ac.kr
M Zafar IqbalComsats Institute of Information Technology, Islamabad, PakistanEmail verificata su comsats.edu.pk
Michal BockowskiInstitute of High Pressure Physics PASEmail verificata su unipress.waw.pl
Emma RoccoSUNY Polytechnic Institute CNSEEmail verificata su sunypoly.edu

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Michael A Reshchikov

Professor of Physics, Virginia Commonwealth University

Email verificata su vcu.edu - Home page

Semiconductor physics Photoluminescence GaN defects


Titolo Ordina per citazioni Ordina per anno Ordina per titolo	Citata da Citata da	Anno
A comprehensive review of ZnO materials and devices Ü Özgür, YI Alivov, C Liu, A Teke, MA Reshchikov, S Doğan, V Avrutin, ... Journal of applied physics 98 (4), 2005	13746*	2005
Luminescence properties of defects in GaN MA Reshchikov, H Morkoç Journal of applied physics 97 (6), 2005	2248	2005
Behavior of 2.8-and 3.2-eV photoluminescence bands in Mg-doped GaN at different temperatures and excitation densities MA Reshchikov, GC Yi, BW Wessels Physical Review B 59 (20), 13176, 1999	296	1999
Yellow luminescence of gallium nitride generated by carbon defect complexes DO Demchenko, IC Diallo, MA Reshchikov Physical review letters 110 (8), 087404, 2013	257	2013
Analysis of the temperature and excitation intensity dependencies of photoluminescence in undoped GaN films MA Reshchikov, RY Korotkov Physical Review B 64 (11), 115205, 2001	236	2001
Dislocation density in GaN determined by photoelectrochemical and hot-wet etching P Visconti, KM Jones, MA Reshchikov, R Cingolani, H Morkoç, RJ Molnar Applied Physics Letters 77 (22), 3532-3534, 2000	217	2000
Luminescence properties of defects in ZnO MA Reshchikov, H Morkoc, B Nemeth, J Nause, J Xie, B Hertog, ... Physica B: Condensed Matter 401, 358-361, 2007	215	2007
Carbon defects as sources of the green and yellow luminescence bands in undoped GaN MA Reshchikov, DO Demchenko, A Usikov, H Helava, Y Makarov Physical Review B 90 (23), 235203, 2014	213	2014
Energy band bowing parameter in AlxGa1− xN alloys F Yun, MA Reshchikov, L He, T King, H Morkoç, SW Novak, L Wei Journal of applied physics 92 (8), 4837-4839, 2002	209	2002
Green luminescence in Mg-doped GaN MA Reshchikov, DO Demchenko, JD McNamara, S Fernández-Garrido, ... Physical Review B 90 (3), 035207, 2014	162	2014
Photoluminescence band near 2.9 eV in undoped GaN epitaxial layers MA Reshchikov, F Shahedipour, RY Korotkov, BW Wessels, MP Ulmer Journal of Applied Physics 87 (7), 3351-3354, 2000	144	2000
Measurement and analysis of photoluminescence in GaN MA Reshchikov Journal of applied physics 129 (12), 2021	133	2021
Surface photovoltage in undoped n-type GaN MA Reshchikov, M Foussekis, AA Baski Journal of Applied Physics 107 (11), 2010	132	2010
Tunable and abrupt thermal quenching of photoluminescence in high-resistivity Zn-doped GaN MA Reshchikov, AA Kvasov, MF Bishop, T McMullen, A Usikov, ... Physical Review B—Condensed Matter and Materials Physics 84 (7), 075212, 2011	120	2011
Temperature dependence of defect-related photoluminescence in III-V and II-VI semiconductors MA Reshchikov Journal of Applied Physics 115 (1), 2014	118	2014
Dependence of GaN polarity on the parameters of the buffer layer grown by molecular beam epitaxy D Huang, P Visconti, KM Jones, MA Reshchikov, F Yun, AA Baski, T King, ... Applied Physics Letters 78 (26), 4145-4147, 2001	115	2001
Two charge states of the acceptor in GaN: Evidence from photoluminescence MA Reshchikov, M Vorobiov, DO Demchenko, Ü Özgür, H Morkoç, ... Physical Review B 98 (12), 125207, 2018	110	2018
Yellow and green luminescence in a freestanding GaN template MA Reshchikov, H Morkoç, SS Park, KY Lee Applied Physics Letters 78 (20), 3041-3043, 2001	102	2001
Two charge states of dominant acceptor in unintentionally doped GaN: Evidence from photoluminescence study MA Reshchikov, H Morkoç, SS Park, KY Lee Applied Physics Letters 81 (26), 4970-4972, 2002	100	2002
GaN epitaxy on thermally treated c-plane bulk ZnO substrates with O and Zn faces X Gu, MA Reshchikov, A Teke, D Johnstone, H Morkoc, B Nemeth, ... Applied physics letters 84 (13), 2268-2270, 2004	99	2004

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