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Ahtisham Pampori
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ASM GaN: Industry standard model for GaN RF and power devices—Part 1: DC, CV, and RF model
S Khandelwal, YS Chauhan, TA Fjeldly, S Ghosh, A Pampori, D Mahajan, ...
IEEE Transactions on Electron Devices 66 (1), 80-86, 2018
1472018
A new small-signal parameter extraction technique for large gate-periphery GaN HEMTs
SA Ahsan, S Ghosh, S Khandelwal, YS Chauhan
IEEE Microwave and Wireless Components Letters 27 (10), 918-920, 2017
282017
Electrical characterization and modeling of GaN HEMTs at cryogenic temperatures
MS Nazir, P Kushwaha, A Pampori, SA Ahsan, YS Chauhan
IEEE Transactions on Electron Devices 69 (11), 6016-6022, 2022
202022
Modeling of bias-dependent effective velocity and its impact on saturation transconductance in AlGaN/GaN HEMTs
AUH Pampori, SA Ahsan, R Dangi, U Goyal, SK Tomar, M Mishra, ...
IEEE Transactions on Electron Devices 68 (7), 3302-3307, 2021
142021
Modeling the Impact of Dynamic Fin-Width on the IV, CV and RF Characteristics of GaN Fin–HEMTs
AUH Pampori, SA Ahsan, YS Chauhan
IEEE Transactions on Electron Devices 69 (5), 2275-2281, 2022
112022
Modeling and analysis of double channel GaN HEMTs using a physics-based analytical model
RR Malik, MA Mir, Z Bhat, A Pampori, YS Chauhan, SA Ahsan
IEEE Journal of the Electron Devices Society 9, 789-797, 2021
82021
A low noise power amplifier MMIC to mitigate co-site interference in 5G front end modules
N Bajpai, A Pampori, P Maity, M Shah, A Das, YS Chauhan
IEEE Access 9, 124900-124909, 2021
72021
Physics-based compact modeling of MSM-2DEG GaN-based varactors for THz applications
AUH Pampori, SA Ahsan, S Ghosh, S Khandelwal, YS Chauhan
2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM …, 2018
72018
S-band gan based power amplifier with symmetric matching network
M Zaid, A Pampori, R Dangi, YS Chauhan
2022 IEEE 9th Uttar Pradesh Section International Conference on Electrical …, 2022
52022
16 watt s-band gan based power amplifier using replicating stages
M Zaid, A Pampori, YS Chauhan
2022 IEEE 9th Uttar Pradesh Section International Conference on Electrical …, 2022
52022
A width-scalable SPICE compact model for GaN HEMTs including self-heating effect
R Dangi, A Pampori, P Kushwaha, E Yadav, S Sinha, YS Chauhan
2022 Device Research Conference (DRC), 1-2, 2022
52022
A Large-Signal SPICE Model for a Dual-Gate GaN RF Switch With off-State Harmonic Control
A Pampori, MS Nazir, R Dangi, ML Chou, GY Lee, YS Chauhan
IEEE Transactions on Electron Devices, 2023
42023
A comprehensive rf characterization and modeling methodology for the 5nm technology node finfets
SS Parihar, A Pampori, P Dwivedi, J Huang, W Wang, K Imura, C Hu, ...
IEEE Journal of the Electron Devices Society, 2023
42023
GaN-based wide-band high-efficiency power amplifier with multi harmonic resonance
M Zaid, A Pampori, MS Nazir, YS Chauhan
Microelectronics Journal 145, 106129, 2024
32024
Charge-based flicker noise modeling of GaN HEMTs down to cryogenic temperatures
MS Nazir, A Pampori, R Dangi, SA Ahsan, YS Chauhan
IEEE Electron Device Letters 44 (9), 1416-1419, 2023
32023
Characterization and modeling of drain lag using a modified RC network in the ASM-HEMT framework
MS Nazir, A Pampori, R Dangi, P Kushwaha, E Yadav, S Sinha, ...
Solid-State Electronics 199, 108490, 2023
32023
GaN low noise amplifier MMIC with LPF and HPF noise matching
M Zaid, P Kumari, MS Nazir, A Pampori, U Goyal, M Mishra, YS Chauhan
Microelectronic Engineering 291, 112199, 2024
22024
Optimizing Low Noise Amplifiers: A Two-Stage Approach for Improved Noise Figure and Stability
M Zaid, P Kumari, A Pampori, MS Nazir, U Goyal, M Mishra, YS Chauhan
IEEE Access, 2024
22024
A width-scalable spice model of gan-hemts for X-band RF applications
MH Ansari, R Dangi, A Pampori, P Kushwaha, E Yadav, S Sinha, ...
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2023
22023
A Novel Neural Network-based Transistor Compact Model Including Self-Heating
CT Tung, A Pampori, CK Dabhi, S Salahuddin, C Hu
IEEE Electron Device Letters, 2024
12024
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