Vibrational spectra of alumina-and silica-supported vanadia revisited: An experimental and theoretical model catalyst study N Magg, B Immaraporn, JB Giorgi, T Schroeder, M Bäumer, J Döbler, ...
Journal of Catalysis 226 (1), 88-100, 2004
317 2004 Impact of Temperature on the Resistive Switching Behavior of Embedded C Walczyk, D Walczyk, T Schroeder, T Bertaud, M Sowinska, M Lukosius, ...
IEEE transactions on electron devices 58 (9), 3124-3131, 2011
297 2011 Ultra‐sensitive graphene‐plasmonic hybrid platform for label‐free detection P Wang, O Liang, W Zhang, T Schroeder, YH Xie
Advanced Materials 25 (35), 4918-4924, 2013
246 2013 Model for the Resistive Switching Effect in EA Miranda, C Walczyk, C Wenger, T Schroeder
IEEE Electron Device Letters 31 (6), 609-611, 2010
219 2010 Towards forming-free resistive switching in oxygen engineered HfO2− x SU Sharath, T Bertaud, J Kurian, E Hildebrandt, C Walczyk, P Calka, ...
Applied physics letters 104 (6), 2014
198 2014 Label-free SERS selective detection of dopamine and serotonin using graphene-Au nanopyramid heterostructure P Wang, M Xia, O Liang, K Sun, AF Cipriano, T Schroeder, H Liu, YH Xie
Analytical chemistry 87 (20), 10255-10261, 2015
192 2015 EPITAXIAL GROWTH OF SiO2 ON Mo(112) T Schroeder, M Adelt, B Richter, M Naschitzki, M Bäumer, HJ Freund
Surface Review and Letters 7 (01n02), 7-14, 2000
172 2000 Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device A Di Bartolomeo, F Giubileo, G Luongo, L Iemmo, N Martucciello, G Niu, ...
2D Materials 4 (1), 015024, 2016
168 2016 Hybrid graphene/silicon Schottky photodiode with intrinsic gating effect A Di Bartolomeo, G Luongo, F Giubileo, N Funicello, G Niu, T Schroeder, ...
2D Materials 4 (2), 025075, 2017
149 2017 Pulse-induced low-power resistive switching in HfO2 metal-insulator-metal diodes for nonvolatile memory applications C Walczyk, C Wenger, R Sohal, M Lukosius, A Fox, J Dąbrowski, ...
Journal of Applied Physics 105 (11), 2009
140 2009 Formation of a faceted MoO2 epilayer on Mo (1 1 2) studied by XPS, UPS and STM T Schroeder, J Zegenhagen, N Magg, B Immaraporn, HJ Freund
Surface science 552 (1-3), 85-97, 2004
135 2004 Imaging of strain and lattice orientation by quick scanning X-ray microscopy combined with three-dimensional reciprocal space mapping GA Chahine, MI Richard, RA Homs-Regojo, TN Tran-Caliste, D Carbone, ...
Journal of Applied Crystallography 47 (2), 762-769, 2014
134 2014 Control of Switching Modes and Conductance Quantization in Oxygen Engineered HfOx SU Sharath, S Vogel, L Molina‐Luna, E Hildebrandt, C Wenger, J Kurian, ...
Advanced Functional Materials 27 (32), 1700432, 2017
127 2017 Study of CO adsorption on crystalline-silica-supported palladium particles JB Giorgi, T Schroeder, M Bäumer, HJ Freund
Surface science 498 (1-2), L71-L77, 2002
127 2002 Tensile Ge microstructures for lasing fabricated by means of a silicon complementary metal-oxide-semiconductor process G Capellini, C Reich, S Guha, Y Yamamoto, M Lisker, M Virgilio, A Ghrib, ...
Optics express 22 (1), 399-410, 2014
124 2014 Field emission from single and few-layer graphene flakes S Santandrea, F Giubileo, V Grossi, S Santucci, M Passacantando, ...
Applied Physics Letters 98 (16), 2011
122 2011 Strain analysis in SiN/Ge microstructures obtained via Si-complementary metal oxide semiconductor compatible approach G Capellini, G Kozlowski, Y Yamamoto, M Lisker, C Wenger, G Niu, ...
Journal of Applied Physics 113 (1), 2013
118 2013 Hard x-ray photoelectron spectroscopy study of the electroforming in Ti/HfO2-based resistive switching structures M Sowinska, T Bertaud, D Walczyk, S Thiess, MA Schubert, M Lukosius, ...
Applied Physics Letters 100 (23), 2012
118 2012 Controlled oxygen vacancy induced p-type conductivity in HfO2− x thin films E Hildebrandt, J Kurian, MM Müller, T Schroeder, HJ Kleebe, L Alff
Applied Physics Letters 99 (11), 2011
118 2011 Model catalyst studies on vanadia particles deposited onto a thin-film alumina support. 1. Structural characterization N Magg, JB Giorgi, T Schroeder, M Bäumer, HJ Freund
The journal of physical chemistry b 106 (34), 8756-8761, 2002
118 2002 
Christian WengerIHP GmbH - Leibniz institute for innovative microelectronicsEmail verificata su ihp-microelectronics.com