Fluorocarbon high-density plasmas. II. Silicon dioxide and silicon etching using CF [sub 4] and CHF [sub 3] GS Oerhlein, Y Zhang, D Vender, O Joubert
J. Vac. Sci. Technol. A 12, 333, 1994
217 * 1994 Oxygen atom actinometry reinvestigated: Comparison with absolute measurements by resonance absorption at 130 nm JP Booth, O Joubert, J Pelletier, N Sadeghi
Journal of applied physics 69 (2), 618-626, 1991
155 1991 The etching of polymers in oxygen‐based plasmas: A parametric study O Joubert, J Pelletier, Y Arnal
Journal of applied physics 65 (12), 5096-5100, 1989
132 1989 New chamber walls conditioning and cleaning strategies to improve the stability of plasma processes G Cunge, B Pelissier, O Joubert, R Ramos, C Maurice
Plasma Sources Science and Technology 14 (3), 599, 2005
120 2005 Mechanisms of porous dielectric film modification induced by reducing and oxidizing ash plasmas N Posseme, T Chevolleau, T David, M Darnon, O Louveau, O Joubert
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2007
105 2007 Fluorocarbon high density plasma. VI. Reactive ion etching lag model for contact hole silicon dioxide etching in an electron cyclotron resonance plasma O Joubert, GS Oehrlein, M Surendra
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 12 (3 …, 1994
100 1994 Ion flux composition in G Cunge, RL Inglebert, O Joubert, L Vallier, N Sadeghi
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2002
98 2002 Mechanisms involved in HBr and Ar cure plasma treatments applied to 193 nm photoresists E Pargon, K Menguelti, M Martin, A Bazin, O Chaix-Pluchery, C Sourd, ...
Journal of applied physics 105 (9), 2009
95 2009 Fluorocarbon high density plasma. V. Influence of aspect ratio on the etch rate of silicon dioxide in an electron cyclotron resonance plasma O Joubert, GS Oehrlein, Y Zhang
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 12 (3 …, 1994
94 1994 Influence of pattern density in nanoimprint lithography C Gourgon, C Perret, G Micouin, F Lazzarino, JH Tortai, O Joubert, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2003
86 2003 Etching mechanisms of low-k SiOCH and selectivity to SiCH and N Posseme, T Chevolleau, O Joubert, L Vallier, P Mangiagalli
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2003
80 2003 Cleaning aluminum fluoride coatings from plasma reactor walls in SiCl4/Cl2 plasmas R Ramos, G Cunge, B Pelissier, O Joubert
Plasma Sources Science and Technology 16 (4), 711, 2007
79 2007 Polysilicon gate etching in high density plasmas. V. Comparison between quantitative chemical analysis of photoresist and oxide masked polysilicon gates etched in HBr/Cl2/O2 … FH Bell, O Joubert
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1997
79 1997 Reducing damage to Si substrates during gate etching processes by synchronous plasma pulsing C Petit-Etienne, M Darnon, L Vallier, E Pargon, G Cunge, F Boulard, ...
Journal of Vacuum Science & Technology B 28 (5), 926-934, 2010
78 2010 Microstructure and electrical characterizations of yttrium oxide and yttrium silicate thin films deposited by pulsed liquid-injection plasma-enhanced metal-organic chemical … C Durand, C Dubourdieu, C Vallée, V Loup, M Bonvalot, O Joubert, ...
Journal of applied physics 96 (3), 1719-1729, 2004
75 2004 Impact of chemistry on profile control of resist masked silicon gates etched in high density halogen-based plasmas X Detter, R Palla, I Thomas-Boutherin, E Pargon, G Cunge, O Joubert, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2003
72 2003 Effects of ion bombardment and chemical reaction on wafer temperature during plasma etching A Durandet, O Joubert, J Pelletier, M Pichot
Journal of applied physics 67 (8), 3862-3866, 1990
72 1990 Etching mechanisms of HfO2, SiO2, and poly-Si substrates in BCl3 plasmas E Sungauer, E Pargon, X Mellhaoui, R Ramos, G Cunge, L Vallier, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2007
71 2007 X-ray photoelectron spectroscopy investigation of sidewall passivation films formed during gate etch processes L Desvoivres, L Vallier, O Joubert
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2001
71 2001 Etching of porous SiOCH materials in fluorocarbon-based plasmas N Posseme, T Chevolleau, O Joubert, L Vallier, N Rochat
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2004
64 2004 
Raphael Ramosresearcher, CEA LITEN (Grenoble)Email verificata su cea.fr
