The Physics of Semiconductors MJ Caldas, J Dabrowski, A Fazzio, M Scheffler
Singapore: World Scientific, 1990
892 1990 Theoretical Evidence for an Optically Inducible Structural Transition of the Isolated As Antisite in GaAs: Identification and Explanation of EL 2? J Dabrowski, M Scheffler
Physical review letters 60 (21), 2183, 1988
338 1988 Silicon surfaces and formation of interfaces: basic science in the industrial world J Dabrowski, HJ Mussig
World Scientific, 2000
321 2000 A graphene-based hot electron transistor S Vaziri, G Lupina, C Henkel, AD Smith, M Östling, J Dabrowski, ...
Nano letters 13 (4), 1435-1439, 2013
284 2013 Self-consistent study of the electronic and structural properties of the clean Si(001)(2 × 1) surface J. Dabrowski, M. Scheffler
Applied Surface Science 56, 15, 1992
284 1992 Atomic structure of clean Si (113) surfaces: Theory and experiment J Dabrowski, HJ Müssig, G Wolff
Physical review letters 73 (12), 1660, 1994
250 1994 Isolated arsenic-antisite defect in GaAs and the properties of EL2 J. Dabrowski, M. Scheffler
Physical Review B 40, 10391, 1989
211 1989 Vertical Graphene Base Transistor W Mehr, J Dabrowski, G Lippert, YH Xie, MC Lemme, M Ostling, G Lupina
Electron Device Letters 33, 691, 2012
188 * 2012 Pulse-induced low-power resistive switching in HfO2 metal-insulator-metal diodes for nonvolatile memory applications C Walczyk, C Wenger, R Sohal, M Lukosius, A Fox, J Dąbrowski, ...
Journal of Applied Physics 105 (11), 2009
140 2009 Photoemission and ab initio theoretical study of interface and film formation during epitaxial growth and annealing of praseodymium oxide on Si(001) A Fissel, J Dabrowski, HJ Osten
Journal of applied physics 91 (11), 8986-8991, 2002
131 2002 Parameter-free calculations of total energies, interatomic forces and vibrational entropies of defects in semiconductors M Scheffler, J Dabrowski
Philosophical Magazine A 58 (1), 107-121, 1988
126 1988 Energy and width of J Dabrowski, J Rożynek
Physical Review C 23 (4), 1706, 1981
103 1981 Titanium-added praseodymium silicate high-k layers on Si (001) T Schroeder, G Lupina, J Dabrowski, A Mane, C Wenger, G Lippert, ...
Applied Physics Letters 87 (2), 2005
87 2005 Direct graphene growth on insulator G Lippert, J Dabrowski, M Lemme, C Marcus, O Seifarth, G Lupina
physica status solidi (b) 248 (11), 2619-2622, 2011
84 2011 Isospin dependence of the single-particle potential of the J Dabrowski
Physical Review C 60 (2), 025205, 1999
83 1999 Graphene grown on Ge (001) from atomic source G Lippert, J Dąbrowski, T Schroeder, MA Schubert, Y Yamamoto, F Herziger, J ...
Carbon 75 (104-112), 2014
80 2014 Mechanism of dopant segregation to J Dabrowski, HJ Müssig, V Zavodinsky, R Baierle, MJ Caldas
Physical Review B 65 (24), 245305, 2002
80 2002 Metal-free CVD graphene synthesis on 200 mm Ge/Si (001) substrates M Lukosius, J Dabrowski, J Kitzmann, O Fursenko, F Akhtar, M Lisker, ...
ACS applied materials & interfaces 8 (49), 33786-33793, 2016
75 2016 Anion-antisite-like defects in III-V compounds MJ Caldas, J Dabrowski, A Fazzio, M Scheffler
Physical review letters 65 (16), 2046, 1990
73 1990 Calculation of the surface stress anisotropy for the buckled Si(001)(1×2) and p (2×2) surfaces J Dabrowski, E Pehlke, M Scheffler
Physical Review B 49 (7), 4790, 1994
72 1994 