| The role of traps in the photocurrent generation mechanism in thin InSe photodetectors Q Zhao, W Wang, F Carrascoso-Plana, W Jie, T Wang, ... Materials horizons 7 (1), 252-262, 2020 | 218 | 2020 |
| Thickness-induced structural phase transformation of layered gallium telluride Q Zhao, T Wang, Y Miao, F Ma, Y Xie, X Ma, Y Gu, J Li, J He, B Chen, S Xi, ... Physical Chemistry Chemical Physics 18 (28), 18719-18726, 2016 | 103 | 2016 |
| Microwatts continuous-wave pumped second harmonic generation in few-and mono-layer GaSe XT Gan, CY Zhao, SQ Hu, T Wang, Y Song, J Li, QH Zhao, WQ Jie, ... Light: Science & Applications 7 (1), 17126-17126, 2018 | 101 | 2018 |
| InSe: a two-dimensional semiconductor with superior flexibility Q Zhao, R Frisenda, T Wang, A Castellanos-Gomez Nanoscale 11 (20), 9845-9850, 2019 | 93 | 2019 |
| Toward air stability of thin GaSe devices: avoiding environmental and laser‐induced degradation by encapsulation Q Zhao, R Frisenda, P Gant, D Perez de Lara, C Munuera, ... Advanced Functional Materials 28 (47), 1805304, 2018 | 69 | 2018 |
| InSe Schottky diodes based on van der Waals contacts Q Zhao, W Jie, T Wang, A Castellanos‐Gomez, R Frisenda Advanced Functional Materials 30 (24), 2001307, 2020 | 68 | 2020 |
| An inexpensive system for the deterministic transfer of 2D materials Q Zhao, T Wang, YK Ryu, R Frisenda, A Castellanos-Gomez Journal of Physics: Materials 3 (1), 016001, 2020 | 59 | 2020 |
| Gate‐Switchable Photovoltaic Effect in BP/MoTe2 van der Waals Heterojunctions for Self‐Driven Logic Optoelectronics S Hu, J Xu, Q Zhao, X Luo, X Zhang, T Wang, W Jie, Y Cheng, R Frisenda, ... Advanced Optical Materials 9 (5), 2001802, 2021 | 40 | 2021 |
| High-quality GaSe single crystal grown by the Bridgman method T Wang, J Li, Q Zhao, Z Yin, Y Zhang, B Chen, Y Xie, W Jie Materials 11 (2), 186, 2018 | 33 | 2018 |
| A system for the deterministic transfer of 2D materials under inert environmental conditions P Gant, F Carrascoso, Q Zhao, YK Ryu, M Seitz, F Prins, R Frisenda, ... 2D Materials 7 (2), 025034, 2020 | 32 | 2020 |
| Giant piezoresistive effect and strong bandgap tunability in ultrathin InSe upon biaxial strain Q Zhao, T Wang, R Frisenda, A Castellanos‐Gomez Advanced Science 7 (20), 2001645, 2020 | 28 | 2020 |
| Passivation of layered gallium telluride by double encapsulation with graphene E Mercado, Y Zhou, Y Xie, Q Zhao, H Cai, B Chen, W Jie, S Tongay, ... ACS omega 4 (19), 18002-18010, 2019 | 26 | 2019 |
| Reconfigurable InSe electronics with van der Waals integration S Hu, X Luo, J Xu, Q Zhao, Y Cheng, T Wang, W Jie, ... Advanced Electronic Materials 8 (5), 2101176, 2022 | 25 | 2022 |
| Multiple Optical Frequency Conversions in Few‐Layer GaSe Assisted by a Photonic Crystal Cavity L Fang, Q Yuan, H Fang, X Gan, J Li, T Wang, Q Zhao, W Jie, J Zhao Advanced Optical Materials 6 (22), 1800698, 2018 | 22 | 2018 |
| Thickness identification of thin InSe by optical microscopy methods Q Zhao, S Puebla, W Zhang, T Wang, R Frisenda, A Castellanos-Gomez Advanced Photonics Research 1 (2), 2000025, 2020 | 21 | 2020 |
| Integrating van der Waals materials on paper substrates for electrical and optical applications W Zhang, Q Zhao, C Munuera, M Lee, E Flores, JEF Rodrigues, JR Ares, ... Applied Materials Today 23, 101012, 2021 | 20 | 2021 |
| ε-InSe single crystals grown by a horizontal gradient freeze method M Sun, W Wang, Q Zhao, X Gan, Y Sun, W Jie, T Wang CrystEngComm 22 (45), 7864-7869, 2020 | 20 | 2020 |
| Unusual deformation and fracture in gallium telluride multilayers Y Zhou, S Zhou, P Ying, Q Zhao, Y Xie, M Gong, P Jiang, H Cai, B Chen, ... The journal of physical chemistry letters 13 (17), 3831-3839, 2022 | 14 | 2022 |
| Lattice vibration of layered GaTe single crystals T Wang, Q Zhao, Y Miao, F Ma, Y Xie, W Jie Crystals 8 (2), 74, 2018 | 13 | 2018 |
| A system to test 2D optoelectronic devices in high vacuum Q Zhao, F Carrascoso, P Gant, T Wang, R Frisenda, ... Journal of Physics: Materials 3 (3), 036001, 2020 | 11 | 2020 |
Tao WangNorthwestern Polytechnical UniversityEmail verificata su nwpu.edu.cn
