| Role of substrate temperature on MoO3 thin films by the JNS pyrolysis technique for P–N junction diode application M Balaji, J Chandrasekaran, M Raja Materials Science in Semiconductor Processing 43, 104-113, 2016 | 126 | 2016 |
| Impact of annealing treatment on structural and dc electrical properties of spin coated tungsten trioxide thin films for Si/WO3/Ag junction diode M Raja, J Chandrasekaran, M Balaji, B Janarthanan Materials Science in Semiconductor Processing 56, 145-154, 2016 | 65 | 2016 |
| Impact of Zr content on multiphase zirconium–tungsten oxide (Zr–WO x) films and its MIS structure of Cu/Zr–WO x/p-Si Schottky barrier diodes R Marnadu, J Chandrasekaran, M Raja, M Balaji, V Balasubramani Journal of Materials Science: Materials in Electronics 29 (4), 2618-2627, 2018 | 56 | 2018 |
| Influence of metal work function and incorporation of Sr atom on WO3 thin films for MIS and MIM structured SBDs R Marnadu, J Chandrasekaran, M Raja, M Balaji, S Maruthamuthu, ... Superlattices and Microstructures 119, 134-149, 2018 | 55 | 2018 |
| Structural, optical and electrical properties of Ru doped MoO3 thin films and its P–N diode application by JNS pyrolysis technique M Balaji, J Chandrasekaran, M Raja, S Rajesh Journal of Materials Science: Materials in Electronics 27, 11646-11658, 2016 | 51 | 2016 |
| Optimization and characterization of CuO thin films for P–N junction diode application by JNSP technique P Venkateswari, P Thirunavukkarasu, M Ramamurthy, M Balaji, ... Optik 140, 476-484, 2017 | 47 | 2017 |
| Characterization of jet nebulizer sprayed CdO thin films for solar cell application M Ramamurthy, M Balaji, P Thirunavukkarasu Optik 127 (8), 3809-3819, 2016 | 38 | 2016 |
| Investigation of microstructural, optical and dc electrical properties of spin coated Al: WO3 thin films for n-Al: WO3/p-Si heterojunction diodes M Raja, J Chandrasekaran, M Balaji, P Kathirvel Optik 145, 169-180, 2017 | 32 | 2017 |
| Investigation on microstructural and opto-electrical properties of Zr-doped SnO2 thin films for Al/Zr: SnO2/p-Si Schottky barrier diode application K Ravikumar, S Agilan, M Raja, R Marnadu, T Alshahrani, M Shkir, ... Physica B: Condensed Matter 599, 412452, 2020 | 26 | 2020 |
| Evaluation of microstructural and electrical properties of WO3-x thin films for p-Si/n-WO3-x/Ag junction diodes M Raja, J Chandrasekaran, M Balaji Optik 127 (22), 11009-11019, 2016 | 25 | 2016 |
| Growth and characterization of jet nebulizer spray deposited n-type WO3 thin films for junction diode application K Shanmugasundaram, P Thirunavukkarasu, M Ramamurthy, M Balaji, ... Oriental Journal of Chemistry 33 (5), 2484, 2017 | 22 | 2017 |
| Fabrication of ON/OFF switching response based on n-Ni-doped MoO3/p-Si junction diodes using Ni-MoO3 thin films as n-type layer prepared by JNS pyrolysis … M Balaji, J Chandrasekaran, M Raja, R Marnadu, M Ramamurthy, M Shkir Applied Physics A 126, 1-14, 2020 | 21 | 2020 |
| Impact of Cu concentration on the properties of spray coated Cu-MoO3 thin films: evaluation of n-CuMoO3/p-Si junction diodes by JV, Norde and Cheung’s methods M Balaji, J Chandrasekaran, M Raja, R Marnadu Materials Research Express 6 (10), 106404, 2019 | 17 | 2019 |
| The Structural, Optical and Electrical Properties of Spin Coated WO 3 Thin Films Using Organic Acids M Raja, J Chandrasekaran, M Balaji silicon 9, 201-210, 2017 | 15 | 2017 |
| Morphological and optical evolution of different organic acids used MoO3 thin films by spin coating method M Balaji, J Chandrasekaran, M Raja Optik 127 (15), 6015-6027, 2016 | 14 | 2016 |
| Influence of metal (M = Cd, In, and Sn) dopants on the properties of spin-coated WO3 thin films and fabrication of temperature-dependent heterojunction diodes M Raja, J Chandrasekaran, M Balaji, P Kathirvel, R Marnadu Journal of Sol-Gel Science and Technology 93, 495-505, 2020 | 13 | 2020 |
| Characterization of WMoO3 Thin Films and its n-WMoO3/p-Si Junction Diodes Via JNS Pyrolysis Technique M Balaji, J Chandrasekaran, M Raja Zeitschrift für Physikalische Chemie 231 (5), 1017-1037, 2017 | 13 | 2017 |
| Effects of change of oxygen vacancy on hysteresis voltage and stability under time-temperature dependence positive bias stress in amorphous SZTO transistors B Murugan, SY Lee Microelectronic Engineering 253, 111678, 2022 | 12 | 2022 |
| Two-dimensional materials based on negative differential transconductance and negative differential resistance for the application of multi-valued logic circuit: a review B Murugan, SY Lee Carbon Letters 33 (1), 59-76, 2023 | 8 | 2023 |
| Structure, morphology and opto-nonlinear behaviors of Nd: PbI2/FTO thin film system for optoelectronics ZR Khan, M Shkir, A Khan, SM Mariappan, M Balaji, MR Sheikh, S AlFaify Solid State Sciences 103, 106192, 2020 | 8 | 2020 |