High-quality sandwiched black phosphorus heterostructure and its quantum oscillations X Chen, Y Wu, Z Wu, Y Han, S Xu, L Wang, W Ye, T Han, Y He, Y Cai, ...
Nature communications 6 (1), 7315, 2015
588 2015 Néel-type skyrmion in WTe2 /Fe3 GeTe2 van der Waals heterostructure Y Wu, S Zhang, J Zhang, W Wang, YL Zhu, J Hu, G Yin, K Wong, C Fang, ...
Nature communications 11 (1), 3860, 2020
333 2020 Ubiquitous superconducting diode effect in superconductor thin films Y Hou, F Nichele, H Chi, A Lodesani, Y Wu, MF Ritter, DZ Haxell, ...
Physical Review Letters 131 (2), 027001, 2023
163 2023 Universal low-temperature Ohmic contacts for quantum transport in transition metal dichalcogenides S Xu, Z Wu, H Lu, Y Han, G Long, X Chen, T Han, W Ye, Y Wu, J Lin, ...
2D Materials 3 (2), 021007, 2016
135 2016 Even–odd layer-dependent magnetotransport of high-mobility Q-valley electrons in transition metal disulfides Z Wu, S Xu, H Lu, A Khamoshi, GB Liu, T Han, Y Wu, J Lin, G Long, Y He, ...
Nature communications 7 (1), 12955, 2016
115 2016 Exchange-biasing topological charges by antiferromagnetism QL He, G Yin, AJ Grutter, L Pan, X Che, G Yu, DA Gilbert, SM Disseler, ...
Nature communications 9 (1), 2767, 2018
88 2018 A van der Waals Interface Hosting Two Groups of Magnetic Skyrmions Y Wu, B Francisco, W Wang, Y Zhang, C Wan, X Han, H Chi, Y Hou, ...
Advanced Materials, 202110583, 2022
86 2022 van der Waals Epitaxial Growth of Atomically Thin Bi2 Se3 and Thickness-Dependent Topological Phase Transition S Xu, Y Han, X Chen, Z Wu, L Wang, T Han, W Ye, H Lu, G Long, Y Wu, ...
Nano letters 15 (4), 2645-2651, 2015
72 2015 Odd-Integer Quantum Hall States and Giant Spin Susceptibility in S Xu, J Shen, G Long, Z Wu, Z Bao, CC Liu, X Xiao, T Han, J Lin, Y Wu, ...
Physical Review Letters 118 (6), 067702, 2017
62 2017 Large exchange splitting in monolayer graphene magnetized by an antiferromagnet Y Wu, G Yin, L Pan, AJ Grutter, Q Pan, A Lee, DA Gilbert, JA Borchers, ...
Nature Electronics 3 (10), 604-611, 2020
54 2020 Observation of quantum anomalous Hall effect and exchange interaction in topological insulator/antiferromagnet heterostructure L Pan, A Grutter, P Zhang, X Che, T Nozaki, A Stern, M Street, B Zhang, ...
Advanced Materials 32 (34), 2001460, 2020
41 2020 Manipulating exchange bias in a van der Waals ferromagnet Y Wu, W Wang, L Pan, KL Wang
Advanced Materials 34 (12), 2105266, 2022
35 2022 Termination switching of antiferromagnetic proximity effect in topological insulator CY Yang, L Pan, AJ Grutter, H Wang, X Che, QL He, Y Wu, DA Gilbert, ...
Science Advances 6 (33), eaaz8463, 2020
34 2020 Detection of interlayer interaction in few-layer graphene Z Wu, Y Han, J Lin, W Zhu, M He, S Xu, X Chen, H Lu, W Ye, T Han, Y Wu, ...
Physical Review B 92 (7), 075408, 2015
31 2015 A fast transfer-free synthesis of high-quality monolayer graphene on insulating substrates by a simple rapid thermal treatment Z Wu, Y Guo, Y Guo, R Huang, S Xu, J Song, H Lu, Z Lin, Y Han, H Li, ...
Nanoscale 8 (5), 2594-2600, 2016
26 2016 Negative Compressibility in Graphene-terminated Black Phosphorus Heterostructures Y Wu, X Chen, Z Wu, S Xu, T Han, J Lin, S Brian, Y Cai, Y He, C Cheng, ...
Physical Review B 93 (3), 035455, 2016
22 2016 Efficient Spin‐Orbit Torque Switching of Perpendicular Magnetization using Topological Insulators with High Thermal Tolerance Q Pan, Y Liu, H Wu, P Zhang, H Huang, C Eckberg, X Che, Y Wu, B Dai, ...
Advanced Electronic Materials 8 (9), 2200003, 2022
20 2022 Probing the electronic states and impurity effects in black phosphorus vertical heterostructures X Chen, L Wang, Y Wu, H Gao, Y Wu, G Qin, Z Wu, Y Han, S Xu, T Han, ...
2D Materials 3 (1), 015012, 2016
19 2016 2D Magnetic heterostructures: spintronics and quantum future B Zhang, P Lu, R Tabrizian, PXL Feng, Y Wu
npj Spintronics 2 (1), 6, 2024
18 2024 Induced Ising spin-orbit interaction in metallic thin films on monolayer Y Wu, JJ He, T Han, S Xu, Z Wu, J Lin, T Zhang, Y He, N Wang
Physical Review B 99 (12), 121406, 2019
18 2019 
Ning WangHong Kong University of Science and TechnologyEmail verificata su ust.hk