| Light output performance of red AlGaInP-based light emitting diodes with different chip geometries and structures JT Oh, SY Lee, YT Moon, JH Moon, S Park, KY Hong, KY Song, C Oh, ... Optics express 26 (9), 11194-11200, 2018 | 189 | 2018 |
| Optimization of (112¯ 0) a-plane GaN growth by MOCVD on (11¯ 02) r-plane sapphire X Ni, Y Fu, YT Moon, N Biyikli, H Morkoc Journal of Crystal Growth 290 (1), 166-170, 2006 | 178 | 2006 |
| Effects of thermal and hydrogen treatment on indium segregation in InGaN/GaN multiple quantum wells YT Moon, DJ Kim, KM Song, CJ Choi, SH Han, TY Seong, SJ Park Journal of Applied Physics 89 (11), 6514-6518, 2001 | 116 | 2001 |
| Temperature dependence of photoluminescence of InGaN films containing In-rich quantum dots YT Moon, DJ Kim, JS Park, JT Oh, JM Lee, YW Ok, H Kim, SJ Park Applied Physics Letters 79 (5), 599-601, 2001 | 97 | 2001 |
| Study of SiNx and SiO2 passivation of GaN surfaces SA Chevtchenko, MA Reshchikov, Q Fan, X Ni, YT Moon, AA Baski, ... Journal of applied physics 101 (11), 2007 | 82 | 2007 |
| Efficacy of single and double SiNx interlayers on defect reduction in GaN overlayers grown by organometallic vapor-phase epitaxy F Yun, YT Moon, Y Fu, K Zhu, Ü Ozgür, H Morkoç, CK Inoki, TS Kuan, ... Journal of applied physics 98 (12), 2005 | 79 | 2005 |
| GaN resistive hydrogen gas sensors F Yun, S Chevtchenko, YT Moon, H Morkoç, TJ Fawcett, JT Wolan Applied Physics Letters 87 (7), 2005 | 77 | 2005 |
| Structural analysis of ferromagnetic Mn-doped ZnO thin films deposited by radio frequency magnetron sputtering C Liu, F Yun, B Xiao, SJ Cho, YT Moon, H Morkoç, M Abouzaid, ... Journal of applied physics 97 (12), 2005 | 75 | 2005 |
| Enhancement of phase separation in the InGaN layer for self-assembled In-rich quantum dots IK Park, MK Kwon, SH Baek, YW Ok, TY Seong, SJ Park, YS Kim, ... Applied Physics Letters 87 (6), 2005 | 72 | 2005 |
| Light extraction enhancement of AlGaN-based vertical type deep-ultraviolet light-emitting-diodes by using highly reflective ITO/Al electrode and surface roughening YJ Sung, MS Kim, H Kim, S Choi, YH Kim, MH Jung, RJ Choi, YT Moon, ... Optics express 27 (21), 29930-29937, 2019 | 66 | 2019 |
| Effectiveness of TiN porous templates on the reduction of threading dislocations in GaN overgrowth by organometallic vapor-phase epitaxy Y Fu, YT Moon, F Yun, Ü Özgür, JQ Xie, S Doğan, H Morkoç, CK Inoki, ... Applied Physics Letters 86 (4), 2005 | 62 | 2005 |
| Light-extraction efficiency control in AlGaN-based deep-ultraviolet flip-chip light-emitting diodes: a comparison to InGaN-based visible flip-chip light-emitting diodes KH Lee, HJ Park, SH Kim, M Asadirad, YT Moon, JS Kwak, JH Ryou Optics express 23 (16), 20340-20349, 2015 | 61 | 2015 |
| Stroke filter for text localization in video images Q Liu, C Jung, S Kim, Y Moon, J Kim 2006 International Conference on Image Processing, 1473-1476, 2006 | 53 | 2006 |
| Fabrication and current-voltage characterization of a ferroelectric lead zirconate titanate/AlGaN∕ GaN field effect transistor YS Kang, Q Fan, B Xiao, YI Alivov, J Xie, N Onojima, SJ Cho, YT Moon, ... Applied physics letters 88 (12), 2006 | 52 | 2006 |
| ‘Pop-in’phenomenon during nanoindentation in epitaxial GaN thin films on c-plane sapphire substrates R Navamathavan, YT Moon, GS Kim, TG Lee, JH Hahn, SJ Park Materials chemistry and physics 99 (2-3), 410-413, 2006 | 48 | 2006 |
| Effect of growth pressure on indium incorporation during the growth of InGaN by MOCVD DJ Kim, YT Moon, KM Song, IH Lee, SJ Park Journal of electronic materials 30, 99-102, 2001 | 48 | 2001 |
| Effect of barrier thickness on the interface and optical properties of InGaN/GaN multiple quantum wells DJ Kim, YT Moon, KM Song, SJ Park Japanese Journal of Applied Physics 40 (5R), 3085, 2001 | 47 | 2001 |
| Light emission enhancement in blue InGaAlN/InGaN quantum well structures SH Park, YT Moon, DS Han, J Seo Park, MS Oh, D Ahn Applied Physics Letters 99 (18), 2011 | 46 | 2011 |
| Effect of n+-GaN subcontact layer on 4H–SiC high-power photoconductive switch K Zhu, S Doğan, YT Moon, J Leach, F Yun, D Johnstone, H Morkoç, G Li, ... Applied Physics Letters 86 (26), 2005 | 46 | 2005 |
| Dislocation density reduction in GaN using porous SiN interlayers A Sagar, RM Feenstra, CK Inoki, TS Kuan, Y Fu, YT Moon, F Yun, ... physica status solidi (a) 202 (5), 722-726, 2005 | 45 | 2005 |