Segui
Hui Guo (郭辉)
Titolo
Citata da
Citata da
Anno
Epitaxial growth and physical properties of 2D materials beyond graphene: from monatomic materials to binary compounds
G Li, YY Zhang, H Guo, L Huang, H Lu, X Lin, YL Wang, S Du, HJ Gao
Chemical Society Reviews 47 (16), 6073-6100, 2018
1292018
Moiré superlattice-level stick-slip instability originated from geometrically corrugated graphene on a strongly interacting substrate
R Shi, L Gao, H Lu, Q Li, TB Ma, H Guo, S Du, XQ Feng, S Zhang, Y Liu, ...
2D Materials 4 (2), 025079, 2017
422017
Sizable band gap in epitaxial bilayer graphene induced by silicene intercalation
H Guo, R Zhang, H Li, X Wang, H Lu, K Qian, G Li, L Huang, X Lin, ...
Nano Letters 20 (4), 2674-2680, 2020
352020
Fabrication of millimeter‐scale, single‐crystal one‐third‐hydrogenated graphene with anisotropic electronic properties
H Chen, DL Bao, D Wang, Y Que, W Xiao, G Qian, H Guo, J Sun, ...
Advanced Materials 30 (32), 1801838, 2018
342018
Modeling atomic-scale electrical contact quality across two-dimensional interfaces
A Song, R Shi, H Lu, L Gao, Q Li, H Guo, Y Liu, J Zhang, Y Ma, X Tang, ...
Nano Letters 19 (6), 3654-3662, 2019
282019
Titanium-based kagome superconductor CsTi_3Bi_5 and topological states
H Yang, Z Zhao, XW Yi, J Liu, JY You, Y Zhang, H Guo, X Lin, C Shen, ...
arXiv preprint arXiv:2209.03840, 2022
272022
Structure and distortion of lead fluoride nanocrystals in rare earth doped oxyfluoride glass ceramics
J Ge, L Zhao, H Guo, Z Lan, L Chang, Y Li, H Yu
Physical Chemistry Chemical Physics 15 (40), 17281-17286, 2013
232013
Bidirectional Photoresponse in a Mixed-Dimensional MoS2/Ge Heterostructure and Its Optic-Neural Synaptic Behavior for Colored Pattern Recognition
Y Zhang, B Wang, Z Han, X Shi, N Zhang, T Miao, D Lin, Z Jiang, M Liu, ...
ACS Photonics 10 (5), 1575-1582, 2023
222023
Experimental Realization of Atomic Monolayer Si9C15
ZY Gao, W Xu, Y Gao, R Guzman, H Guo, X Wang, Q Zheng, Z Zhu, ...
Advanced Materials 34 (35), 2204779, 2022
222022
Insulating SiO2 under Centimeter-Scale, Single-Crystal Graphene Enables Electronic-Device Fabrication
H Guo, X Wang, L Huang, X Jin, Z Yang, Z Zhou, H Hu, YY Zhang, H Lu, ...
Nano Letters 20 (12), 8584-8591, 2020
222020
Distribution of Nd3+ ions in oxyfluoride glass ceramics
H Yu, H Guo, M Zhang, Y Liu, M Liu, L Zhao
Nanoscale research letters 7, 1-7, 2012
172012
Doping concentration induced phase transition in Eu3+-doped β-PbF2 nano-particles
H Guo, H Yu, X Zhang, L Chang, Z Lan, Y Li, L Zhao
Optics Express 21 (21), 24742-24752, 2013
152013
Centimeter-scale, single-crystalline, AB-stacked bilayer graphene on insulating substrates
H Guo, X Wang, H Lu, L Bao, H Peng, K Qian, J Ma, G Li, L Huang, X Lin, ...
2D Materials 6 (4), 045044, 2019
142019
Room‐Temperature Antisymmetric Magnetoresistance in van der Waals Ferromagnet Fe3GaTe2 Nanosheets
G Hu, H Guo, S Lv, L Li, Y Wang, Y Han, L Pan, Y Xie, W Yu, K Zhu, Q Qi, ...
Advanced Materials, 2403154, 2024
122024
Low-temperature growth of large-scale, single-crystalline graphene on Ir (111)
H Guo, H Chen, Y Que, Q Zheng, YY Zhang, LH Bao, L Huang, YL Wang, ...
Chinese Physics B 28 (5), 056107, 2019
112019
Ultrafast Non‐Volatile Floating‐Gate Memory Based on All‐2D Materials
H Wang, H Guo, R Guzman, N JiaziLa, K Wu, A Wang, X Liu, L Liu, L Wu, ...
Advanced Materials, 2311652, 2024
102024
Simulating tactile and visual multisensory behaviour in humans based on an MoS2 field effect transistor
J You, L Wang, Y Zhang, D Lin, B Wang, Z Han, N Zhang, T Miao, M Liu, ...
Nano Research 16 (5), 7405-7412, 2023
102023
Fabrication of large-scale graphene/2D-germanium heterostructure by intercalation
H Guo, X Wang, DL Bao, HL Lu, YY Zhang, G Li, YL Wang, SX Du, ...
Chinese Physics B 28 (7), 078103, 2019
92019
Programmable WSe2/Ge Heterojunction Field‐Effect Transistor with Visible‐Infrared Wavelength‐Distinguishing Detection Capability
M Yang, L Wang, Y Lu, B Wang, N Zhang, M Liu, H Guo, D Lin, J Zhang, ...
Advanced Electronic Materials 9 (2), 2200924, 2023
82023
Visible–infrared dual-band detection with a polarization sensitivity based on GeSe/Ge heterojunction field effect transistor
Y Lu, B Wang, M Yang, Q Zhang, Z Jiang, T Miao, N Zhang, J Zhang, ...
Applied Physics Letters 123 (2), 2023
72023
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