Redox-Based Resistive Switching Memories-Nanoionic Mechanisms, Prospects, and Challenges. R Waser, R Dittmann, G Staikov, K Szot
Advanced Materials (Deerfield Beach, Fla.) 21 (25-26), 2632-2663, 2009
5676 2009 2022 roadmap on neuromorphic computing and engineering DV Christensen, R Dittmann, B Linares-Barranco, A Sebastian, ...
Neuromorphic Computing and Engineering 2 (2), 022501, 2022
502 2022 Coexistence of filamentary and homogeneous resistive switching in Fe-doped SrTiO3 thin-film memristive devices R Muenstermann, T Menke, R Dittmann, R Waser
Adv. Mater 22 (43), 4819-4822, 2010
418 2010 In situ observation of filamentary conducting channels in an asymmetric Ta2 O5 −x /TaO2−x bilayer structureGS Park, YB Kim, SY Park, XS Li, S Heo, MJ Lee, M Chang, JH Kwon, ...
Nature communications 4 (1), 2382, 2013
405 2013 Origin of the ultra‐nonlinear switching kinetics in oxide‐based resistive switches S Menzel, M Waters, A Marchewka, U Böttger, R Dittmann, R Waser
Advanced Functional Materials 21 (23), 4487-4492, 2011
396 2011 Towards oxide electronics: a roadmap M Coll, J Fontcuberta, M Althammer, M Bibes, H Boschker, A Calleja, ...
Applied surface science 482, 1-93, 2019
328 2019 Impact of defect distribution on resistive switching characteristics of Sr2 TiO4 thin films K Shibuya, R Dittmann, S Mi, R Waser
Advanced materials 22 (3), 411-414, 2010
269 2010 Anomalous resistance hysteresis in oxide ReRAM: Oxygen evolution and reincorporation revealed by in situ TEM D Cooper, C Baeumer, N Bernier, A Marchewka, C La Torre, ...
Advanced materials 29 (23), 1700212, 2017
211 2017 Nanoscale resistive switching in SrTiO3 thin films K Szot, R Dittmann, W Speier, R Waser
physica status solidi (RRL)–Rapid Research Letters 1 (2), R86-R88, 2007
211 2007 Identification of DJ Keeble, S Wicklein, R Dittmann, L Ravelli, RA Mackie, W Egger
Physical review letters 105 (22), 226102, 2010
203 2010 Resistive switching and data reliability of epitaxial (Ba, Sr) TiO3 thin films R Oligschlaeger, R Waser, R Meyer, S Karthäuser, R Dittmann
Applied Physics Letters 88 (4), 2006
183 2006 Staikov and Szot Kristof 2009 R Waser, R Dittmann
Adv. Mater 21, 2632, 0
160 Do dislocations act as atomic autobahns for oxygen in the perovskite oxide SrTiO 3? V Metlenko, AHH Ramadan, F Gunkel, H Du, H Schraknepper, ...
Nanoscale 6 (21), 12864-12876, 2014
158 2014 Spectromicroscopic insights for rational design of redox-based memristive devices C Baeumer, C Schmitz, AHH Ramadan, H Du, K Skaja, V Feyer, P Müller, ...
Nature communications 6 (1), 8610, 2015
151 2015 Improved endurance behavior of resistive switching in (Ba, Sr) TiO3 thin films with W top electrode W Shen, R Dittmann, U Breuer, R Waser
Applied physics letters 93 (22), 2008
145 2008 Pulsed laser ablation of complex oxides: The role of congruent ablation and preferential scattering for the film stoichiometry S Wicklein, A Sambri, S Amoruso, X Wang, R Bruzzese, A Koehl, ...
Applied physics letters 101 (13), 2012
144 2012 Tuning electrochemically driven surface transformation in atomically flat LaNiO3 thin films for enhanced water electrolysis C Baeumer, J Li, Q Lu, AYL Liang, L Jin, HP Martins, T Duchoň, M Glöß, ...
Nature materials 20 (5), 674-682, 2021
140 2021 Nanoionic memristive phenomena in metal oxides: the valence change mechanism R Dittmann, S Menzel, R Waser
Advances in Physics 70 (2), 155-349, 2021
133 2021 Separation of bulk and interface contributions to electroforming and resistive switching behavior of epitaxial Fe-doped SrTiO3 T Menke, P Meuffels, R Dittmann, K Szot, R Waser
Journal of applied physics 105 (6), 2009
127 2009 Subfilamentary networks cause cycle-to-cycle variability in memristive devices C Baeumer, R Valenta, C Schmitz, A Locatelli, TO Mentes, SP Rogers, ...
ACS nano 11 (7), 6921-6929, 2017
124 2017 