Eight-band calculations of strained InAs/GaAs quantum dots compared with one-, four-, and six-band approximations C Pryor
Physical Review B 57 (12), 7190, 1998
644 1998 Comparison of two methods for describing the strain profiles in quantum dots C Pryor, J Kim, LW Wang, AJ Williamson, A Zunger
Journal of Applied Physics 83 (5), 2548-2554, 1998
569 1998 Predicted band structures of III-V semiconductors in the wurtzite phase A De, CE Pryor
Physical Review B—Condensed Matter and Materials Physics 81 (15), 155210, 2010
466 2010 Optical studies of individual InAs quantum dots in GaAs: few-particle effects L Landin, MS Miller, ME Pistol, CE Pryor, L Samuelson
Science 280 (5361), 262-264, 1998
407 1998 Landé CE Pryor, ME Flatté
Physical review letters 96 (2), 026804, 2006
275 2006 Electronic structure of strained I n P/G a 0.51 In 0.49 P quantum dots C Pryor, ME Pistol, L Samuelson
Physical Review B 56 (16), 10404, 1997
260 1997 Band-edge diagrams for strained III–V semiconductor quantum wells, wires, and dots CE Pryor, ME Pistol
Physical Review B—Condensed Matter and Materials Physics 72 (20), 205311, 2005
163 2005 Serpentine superlattice quantum-wire arrays of (Al, Ga) As grown on vicinal GaAs substrates MS Miller, H Weman, CE Pryor, M Krishnamurthy, PM Petroff, H Kroemer, ...
Physical review letters 68 (23), 3464, 1992
162 1992 Excited states of individual quantum dots studied by photoluminescence spectroscopy D Hessman, P Castrillo, ME Pistol, C Pryor, L Samuelson
Applied physics letters 69 (6), 749-751, 1996
159 1996 Direct measure of strain and electronic structure in GaAs/GaP core− shell nanowires M Montazeri, M Fickenscher, LM Smith, HE Jackson, J Yarrison-Rice, ...
Nano letters 10 (3), 880-886, 2010
132 2010 Band structure of core-shell semiconductor nanowires ME Pistol, CE Pryor
Physical Review B—Condensed Matter and Materials Physics 78 (11), 115319, 2008
129 2008 Geometry and material parameter dependence of InAs/GaAs quantum dot electronic structure C Pryor
Physical Review B 60 (4), 2869, 1999
126 1999 Quantum wires formed from coupled InAs/GaAs strained quantum dots C Pryor
Physical review letters 80 (16), 3579, 1998
109 1998 Calculations of the electronic structure of strained InAs quantum dots in InP M Holm, ME Pistol, C Pryor
Journal of applied physics 92 (2), 932-936, 2002
102 2002 Growth, structural, and optical properties of self-assembled (In, Ga) As quantum posts on GaAs J He, HJ Krenner, C Pryor, JP Zhang, Y Wu, DG Allen, CM Morris, ...
Nano letters 7 (3), 802-806, 2007
95 2007 Electronic structure and optical properties of Si, Ge and diamond in the lonsdaleite phase A De, CE Pryor
Journal of Physics: Condensed Matter 26 (4), 045801, 2014
94 2014 Optical investigations of individual InAs quantum dots: Level splittings of exciton complexes L Landin, ME Pistol, C Pryor, M Persson, L Samuelson, M Miller
Physical Review B 60 (24), 16640, 1999
84 1999 Accuracy of circular polarization as a measure of spin polarization in quantum dot qubits CE Pryor, ME Flatté
Physical review letters 91 (25), 257901, 2003
78 2003 J Van Bree, AY Silov, PM Koenraad, ME Flatté, CE Pryor
Physical Review B—Condensed Matter and Materials Physics 85 (16), 165323, 2012
76 2012 Electrical and optical properties of self-assembled InAs quantum dots in InP studied by space-charge spectroscopy and photoluminescence H Pettersson, C Pryor, L Landin, ME Pistol, N Carlsson, W Seifert, ...
Physical Review B 61 (7), 4795, 2000
75 2000 
Mats-Erik PistolProfessor in Physics, Lund UniversityEmail verificata su ftf.lth.se
