| Lna design with cmos soi process-l. 4db nf k/ka band lna C Li, O El-Aassar, A Kumar, M Boenke, GM Rebeiz 2018 IEEE/MTT-S International Microwave Symposium-IMS, 1484-1486, 2018 | 66 | 2018 |
| A DC-to-108-GHz CMOS SOI distributed power amplifier and modulator driver leveraging multi-drive complementary stacked cells O El-Aassar, GM Rebeiz IEEE Journal of Solid-State Circuits 54 (12), 3437-3451, 2019 | 61 | 2019 |
| Design of low-power sub-2.4 dB mean NF 5G LNAs using forward body bias in 22 nm FDSOI O El-Aassar, GM Rebeiz IEEE Transactions on Microwave Theory and Techniques 68 (10), 4445-4454, 2020 | 43 | 2020 |
| Octave-tuning dual-core folded VCO leveraging a triple-mode switch-less tertiary magnetic loop O El-Aassar, GM Rebeiz IEEE Journal of Solid-State Circuits 56 (5), 1475-1486, 2021 | 38 | 2021 |
| A cascaded multi-drive stacked-SOI distributed power amplifier with 23.5 dBm peak output power and over 4.5-THz GBW O El-Aassar, GM Rebeiz IEEE Transactions on Microwave Theory and Techniques 68 (7), 3111-3119, 2020 | 38 | 2020 |
| A 120-GHz bandwidth CMOS distributed power amplifier with multi-drive intra-stack coupling O El-Aassar, GM Rebeiz IEEE Microwave and Wireless Components Letters 30 (8), 782-785, 2020 | 31 | 2020 |
| 26.5 A 0.1-to-0.2 V transformer-based switched-mode folded DCO in 22nm FDSOI with active step-down impedance achieving 197dBc/Hz peak FoM and 40MHz/V frequency pushing O El-Aassar, GM Rebeiz 2019 IEEE International Solid-State Circuits Conference-(ISSCC), 416-418, 2019 | 30 | 2019 |
| A compact pMOS stacked-SOI distributed power amplifier with over 100-GHz bandwidth and up to 22-dBm saturated output power O El-Aassar, GM Rebeiz IEEE Solid-State Circuits Letters 2 (2), 9-12, 2019 | 23 | 2019 |
| A 350mV Complementary 4-5 GHz VCO based on a 4-Port Transformer Resonator with 195.8 dBc/Hz Peak FOM in 22nm FDSOI O El-Aassar, GM Rebeiz 2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 159-162, 2019 | 19 | 2019 |
| 4.7 A Compact DC-to-108GHz Stacked-SOI Distributed PA/Driver Using Multi-Drive Inter-Stack Coupling, Achieving 1.525THz GBW, 20.8dBm Peak P1dB, and … O El-Aassar, GM Rebeiz 2019 IEEE International Solid-State Circuits Conference-(ISSCC), 86-88, 2019 | 17 | 2019 |
| A Dual-Core 8-17 GHz LC VCO with Enhanced Tuning Switch-less Tertiary Winding and 208.8 dBc/Hz Peak FoMT in 22nm FDSOI O El-Aassar, GM Rebeiz 2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 247-250, 2020 | 16 | 2020 |
| A 16 path all-passive harmonic rejection mixer with watt-level in-band IIP3 in 45-nm CMOS SOI O El-Aassar, K Kibaroglu, GM Rebeiz IEEE Microwave and Wireless Components Letters 30 (8), 790-793, 2020 | 13 | 2020 |
| A stacked-complementary 5 GHz oscillator with even-only differential harmonic shaping achieving− 150 dBc/Hz phase noise at 10-MHz offset using body-biased thin-oxide 22-nm FDSOI O El-Aassar, GM Rebeiz IEEE Solid-State Circuits Letters 3, 98-101, 2020 | 7 | 2020 |
| 5g mm-wave spdt switch imdn investigation C Li, O Elaassar, N Satish, A Kumar, N Cahoon, G Rebeiz 2019 IEEE MTT-S International Microwave Conference on Hardware and Systems …, 2019 | 6 | 2019 |
| Loss mechanisms and optimum design methodology for efficient mm-Waves class-E PAs O El-Aassar, M El-Nozahi, HF Ragai IEEE Transactions on Circuits and Systems I: Regular Papers 63 (6), 773-784, 2016 | 6 | 2016 |
| A 5 GHz 0.5 V Hybrid Class-B/F−1 CMOS Oscillator With −147 dBc/Hz Phase Noise at 10 MHz Offset Using Body-Biased 22 nm FDSOI O El-Aassar, GM Rebeiz IEEE Microwave and Wireless Components Letters 30 (10), 973-976, 2020 | 5 | 2020 |
| A CMOS LC-based frequency reference with±40ppm stability from− 40° C to 105° C D Gaied, M Khairy, M Atef, A Ahmed, M Shadoufa, A Hassanein, ... 2015 Joint Conference of the IEEE International Frequency Control Symposium …, 2015 | 5 | 2015 |
| Loss mechanisms and switching performance analysis for efficient mm-waves class-E PAs O El-Aassar, M El-Nozahi, HF Ragai 2015 IEEE International Symposium on Circuits and Systems (ISCAS), 1694-1697, 2015 | 2 | 2015 |
| Apparatus and method to determine impedance and/or admittance in a wireless device BS Asuri, C Mishra, OE El-Aassar US Patent 11,609,253, 2023 | 1 | 2023 |
| Power detector A Bellaouar, A Balasubramaniyan, GS Sahota, M Hassan, J Garcia, ... US Patent 12,146,902, 2024 | | 2024 |
Mohamed El-NozahiAin Shams University, EgyptEmail verificata su eng.asu.edu.eg