| 22FFL: A high performance and ultra low power FinFET technology for mobile and RF applications B Sell, B Bigwood, S Cha, Z Chen, P Dhage, P Fan, M Giraud-Carrier, ... 2017 IEEE International Electron Devices Meeting (IEDM), 29.4. 1-29.4. 4, 2017 | 89 | 2017 |
| Observation of ultraviolet emission and effect of surface states on the luminescence from tin oxide nanowires A Kar, MA Stroscio, M Dutta, J Kumari, M Meyyappan Applied Physics Letters 94 (10), 2009 | 81 | 2009 |
| Growth and properties of tin oxide nanowires and the effect of annealing conditions A Kar, MA Stroscio, M Dutta, J Kumari, M Meyyappan Semiconductor science and technology 25 (2), 024012, 2010 | 65 | 2010 |
| Applications of colloidal quantum dots K Sun, M Vasudev, HS Jung, J Yang, A Kar, Y Li, K Reinhardt, P Snee, ... Microelectronics Journal 40 (3), 644-649, 2009 | 62 | 2009 |
| Rapid thermal annealing effects on tin oxide nanowires prepared by vapor–liquid–solid technique A Kar, J Yang, M Dutta, MA Stroscio, J Kumari, M Meyyappan Nanotechnology 20 (6), 065704, 2009 | 59 | 2009 |
| Tailoring the surface properties and carrier dynamics in SnO2 nanowires A Kar, MA Stroscio, M Meyyappan, DJ Gosztola, GP Wiederrecht, M Dutta Nanotechnology 22 (28), 285709, 2011 | 50 | 2011 |
| Intrinsic electronic switching time in ultrathin epitaxial vanadium dioxide thin film A Kar, N Shukla, E Freeman, H Paik, H Liu, R Engel-Herbert, ... Applied Physics Letters 102 (7), 2013 | 43 | 2013 |
| Evidence of compositional inhomogeneity in InxGa1− xN alloys using ultraviolet and visible Raman spectroscopy. A Kar, D Alexson, M Dutta, M Stroscio Journal of Applied Physics 104 (7), 2008 | 35 | 2008 |
| Investigation of nucleation mechanism and tapering observed in ZnO nanowire growth by carbothermal reduction technique A Kar, KB Low, M Oye, MA Stroscio, M Dutta, A Nicholls, M Meyyappan Nanoscale Res Lett 6, 1-9, 2011 | 30 | 2011 |
| Probing ultrafast carrier dynamics in silicon nanowires A Kar, PC Upadhya, SA Dayeh, ST Picraux, AJ Taylor, RP Prasankumar IEEE Journal of Selected Topics in Quantum Electronics 17 (4), 889-895, 2010 | 29 | 2010 |
| Characterization and modeling of metal-insulator transition (MIT) based tunnel junctions E Freeman, A Kar, N Shukla, R Misra, R Engel-Herbert, D Schlom, ... 70th Device Research Conference, 243-244, 2012 | 20 | 2012 |
| The influence of radial heterostructuring on carrier dynamics in gallium nitride nanowires A Kar, Q Li, PC Upadhya, M Ah Seo, J Wright, TS Luk, GT Wang, ... Applied Physics Letters 101 (14), 2012 | 13 | 2012 |
| Preliminary investigation on the modification of electronic properties in surface passivated SnO2 nanowires with Schottky contacts on being exposed to 137Cs γ-radiation A Kar, R Ahern, N Gopalsami, AC Raptis, MA Stroscio, M Dutta Journal of Applied Physics 111 (8), 2012 | 7 | 2012 |
| ESD diode solution for nanoribbon architectures N Nidhi, R Ramaswamy, WM Hafez, HY Chang, T Chang, B Fallahazad, ... US Patent 11,996,403, 2024 | 5 | 2024 |
| Electronic properties of Y‐junctions in SnO2 nanowires A Kar, MA Stroscio, M Dutta, M Meyyappan physica status solidi (b) 248 (12), 2848-2852, 2011 | 5 | 2011 |
| 70th Device Research Conference E Freeman, A Kar, N Shukla, R Misra, R Engel-Herbert, D Schlom, ... University Park, USA, 2012 | 4 | 2012 |
| Ground state energy in a spherical gaas-(al, ga) as quantum dot with parabolic confinement A Kar, C Bose Indian Journal of Physics 80, 357-360, 2006 | 3 | 2006 |
| Gate-all-around integrated circuit structures including varactors KAR Ayan, S Morarka, C Nieva-lozano, K Kolluru, B Guha, CH Lin, ... US Patent 11,417,781, 2022 | 2 | 2022 |
| FinFET based capacitors and resistors and related apparatuses, systems, and methods KAR Ayan, K Phoa, JS Sandford, J Wan, AA Ahsan, LR Paulson, B Sell US Patent 11,393,934, 2022 | 2 | 2022 |
| Integrated circuit structures including backside vias NA Thomson, KC Kolluru, AC Faust, FP O'mahony, KAR Ayan, R Ma US Patent App. 16/728,111, 2021 | 2 | 2021 |