The role of charge trapping in MoS2/SiO2 and MoS2/hBN field-effect transistors YY Illarionov, G Rzepa, M Waltl, T Knobloch, A Grill, MM Furchi, T Mueller, ...
2D Materials 3 (3), 035004, 2016
241 2016 Physical model of low-temperature to cryogenic threshold voltage in MOSFETs A Beckers, F Jazaeri, A Grill, S Narasimhamoorthy, B Parvais, C Enz
IEEE Journal of the Electron Devices Society 8, 780-788, 2020
100 2020 Characterization of Single Defects in Ultrascaled MoS2 B Stampfer, F Zhang, YY Illarionov, T Knobloch, P Wu, M Waltl, A Grill, ...
ACS nano 12 (6), 5368-5375, 2018
78 2018 Reliability and variability of advanced CMOS devices at cryogenic temperatures A Grill, E Bury, J Michl, S Tyaginov, D Linten, T Grasser, B Parvais, ...
2020 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2020
47 2020 Efficient physical defect model applied to PBTI in high-κ stacks G Rzepa, J Franco, A Subirats, M Jech, A Chasin, A Grill, M Waltl, ...
2017 IEEE International Reliability Physics Symposium (IRPS), XT-11.1-XT-11.6, 2017
34 2017 Hot-carrier degradation in FinFETs: Modeling, peculiarities, and impact of device topology A Makarov, SE Tyaginov, B Kaczer, M Jech, A Chasin, A Grill, G Hellings, ...
2017 IEEE International Electron Devices Meeting (IEDM), 13.1. 1-13.1. 4, 2017
32 2017 Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full {V G , V D } Bias Space: Implications and Peculiarities M Jech, G Rott, H Reisinger, S Tyaginov, G Rzepa, A Grill, D Jabs, ...
IEEE Transactions on Electron Devices 67 (8), 3315-3322, 2020
30 2020 Superior NBTI in High- M Waltl, G Rzepa, A Grill, W Goes, J Franco, B Kaczer, L Witters, J Mitard, ...
IEEE Transactions on Electron Devices 64 (5), 2092-2098, 2017
30 2017 Multiplexed superconducting qubit control at millikelvin temperatures with a low-power cryo-CMOS multiplexer R Acharya, S Brebels, A Grill, J Verjauw, T Ivanov, DP Lozano, D Wan, ...
Nature Electronics 6 (11), 900-909, 2023
29 2023 Understanding the excess 1/f noise in MOSFETs at cryogenic temperatures R Asanovski, A Grill, J Franco, P Palestri, A Beckers, B Kaczer, L Selmi
IEEE Transactions on Electron Devices 70 (4), 2135-2141, 2023
29 2023 Impact of mixed negative bias temperature instability and hot carrier stress on MOSFET characteristics—Part II: Theory M Jech, B Ullmann, G Rzepa, S Tyaginov, A Grill, M Waltl, D Jabs, ...
IEEE Transactions on Electron Devices 66 (1), 241-248, 2018
28 2018 Millikelvin temperature cryo-CMOS multiplexer for scalable quantum device characterisation A Potočnik, S Brebels, J Verjauw, R Acharya, A Grill, D Wan, M Mongillo, ...
Quantum Science and Technology 7 (1), 015004, 2021
25 2021 Characterization of interface defects with distributed activation energies in GaN-based MIS-HEMTs R Stradiotto, G Pobegen, C Ostermaier, M Waltl, A Grill, T Grasser
IEEE Transactions on Electron Devices 64 (3), 1045-1052, 2017
17 2017 Cryo-computing for infrastructure applications: A technology-to-microarchitecture co-optimization study D Prasad, M Vangala, M Bhargava, A Beckers, A Grill, D Tierno, ...
2022 International Electron Devices Meeting (IEDM), 23.5. 1-23.5. 4, 2022
16 2022 Evidence of tunneling driven random telegraph noise in cryo-CMOS J Michl, A Grill, B Stampfer, D Waldhoer, C Schleich, T Knobloch, ...
2021 IEEE International Electron Devices Meeting (IEDM), 31.3. 1-31.3. 4, 2021
16 2021 Hot-electron-induced punch-through (HEIP) effect in p-MOSFET enhanced by mechanical stress K Lee, B Kaczer, A Kruv, M Gonzalez, R Degraeve, S Tyaginov, A Grill, ...
IEEE Electron Device Letters 42 (10), 1424-1427, 2021
15 2021 Superior NBTI in high-k SiGe transistors–part II: Theory M Waltl, G Rzepa, A Grill, W Goes, J Franco, B Kaczer, L Witters, J Mitard, ...
IEEE Transactions on Electron Devices 64 (5), 2099-2105, 2017
15 2017 The impact of mixed negative bias temperature instability and hot carrier stress on single oxide defects B Ullmann, M Jech, S Tyaginov, M Waltl, Y Illarionov, A Grill, ...
2017 IEEE International Reliability Physics Symposium (IRPS), XT-10.1-XT-10.6, 2017
15 2017 Comphy v3. 0—A compact-physics framework for modeling charge trapping related reliability phenomena in MOS devices D Waldhoer, C Schleich, J Michl, A Grill, D Claes, A Karl, T Knobloch, ...
Microelectronics Reliability 146, 115004, 2023
14 2023 A compact physics analytical model for hot-carrier degradation S Tyaginov, A Grill, M Vandemaele, T Grasser, G Hellings, A Makarov, ...
2020 IEEE International Reliability Physics Symposium (IRPS), 1-7, 2020
14 2020 
Tibor GrasserProfessor at TU Wien, Head of Institute for Microelectronics, Fellow IEEEEmail verificata su iue.tuwien.ac.at