| Charge scattering and mobility in atomically thin semiconductors N Ma, D Jena Physical Review X 4 (1), 011043, 2014 | 521 | 2014 |
| Intrinsic electron mobility limits in β-Ga2O3 N Ma, N Tanen, A Verma, Z Guo, T Luo, HG Xing, D Jena Applied Physics Letters 109 (21), 2016 | 420 | 2016 |
| Esaki diodes in van der Waals heterojunctions with broken-gap energy band alignment R Yan, S Fathipour, Y Han, B Song, S Xiao, M Li, N Ma, V Protasenko, ... Nano letters 15 (9), 5791-5798, 2015 | 388 | 2015 |
| Exfoliated multilayer MoTe2 field-effect transistors S Fathipour, N Ma, WS Hwang, V Protasenko, S Vishwanath, HG Xing, ... Applied Physics Letters 105 (19), 2014 | 209 | 2014 |
| Carrier statistics and quantum capacitance effects on mobility extraction in two-dimensional crystal semiconductor field-effect transistors N Ma, D Jena 2D Materials 2 (1), 015003, 2015 | 119 | 2015 |
| High-electron-mobility InN layers grown by boundary-temperature-controlled epitaxy X Wang, S Liu, N Ma, L Feng, G Chen, F Xu, N Tang, S Huang, KJ Chen, ... Applied Physics Express 5 (1), 015502, 2012 | 118 | 2012 |
| Interband tunneling in two-dimensional crystal semiconductors N Ma, D Jena Applied Physics Letters 102 (13), 2013 | 65 | 2013 |
| Hole mobility in wurtzite InN N Ma, XQ Wang, ST Liu, G Chen, JH Pan, L Feng, FJ Xu, N Tang, B Shen Applied Physics Letters 98 (19), 2011 | 39 | 2011 |
| Anomalous Hall mobility kink observed in Mg-doped InN: Demonstration of p-type conduction N Ma, XQ Wang, FJ Xu, N Tang, B Shen, Y Ishitani, A Yoshikawa Applied Physics Letters 97 (22), 2010 | 27 | 2010 |
| Temperature dependence of the specific resistance in Ti/Al/Ni/Au Ohmic contacts on (NH4) 2Sx treated n-type GaN F Lin, B Shen, S Huang, FJ Xu, L Lu, J Song, FH Mei, N Ma, ZX Qin, ... Journal of Applied Physics 105 (9), 2009 | 17 | 2009 |
| Current-controlled negative differential resistance effect induced by Gunn-type instability in n-type GaN epilayers N Ma, B Shen, FJ Xu, LW Lu, ZH Feng, ZG Zhang, SB Dun, CP Wen, ... Applied Physics Letters 96 (24), 2010 | 14 | 2010 |
| Deep donor state in InN: Temperature-dependent electron transport in the electron accumulation layers and its influence on Hall-effect measurements N Ma, XQ Wang, ST Liu, L Feng, G Chen, FJ Xu, N Tang, LW Lu, B Shen Applied Physics Letters 99 (18), 2011 | 13 | 2011 |
| Ionic liquid gated electric-double-layer transistors based on Mg-doped InN epitaxial films ZY Chen, HT Yuan, XQ Wang, N Ma, YW Zhang, H Shimotani, ZX Qin, ... Applied Physics Letters 103 (25), 2013 | 10 | 2013 |
| The leakage current mechanisms in the Schottky diode with a thin Al layer insertion between Al0. 245Ga0. 755N/GaN heterostructure and Ni/Au Schottky contact L Fang, W Tao, S Bo, H Sen, L Fang, M Nan, X Fu-Jun, W Peng, ... Chinese Physics B 18 (4), 1614, 2009 | 10* | 2009 |
| Boundary-enhanced momentum relaxation of longitudinal optical phonons in GaN N Ma, B Shen, LW Lu, FJ Xu, L Guo, XQ Wang, F Lin, ZH Feng, SB Dun, ... Applied Physics Letters 100 (5), 2012 | 7 | 2012 |
| Thermal annealing behaviour of Al/Ni/Au multilayer on n-GaN Schottky contacts L Fang, W Tao, S Bo, H Sen, L Fang, M Nan, X Fu-Jun, W Peng, ... Chinese Physics B 18 (4), 1618, 2009 | 7 | 2009 |
| Identification and elimination of inductively coupled plasma-induced defects in AlxGa1-xN/GaN heterostructures L Fang, S Bo, L Li-Wu, L Xin-Yu, W Ke, X Fu-Jun, W Yan, M Nan, H Jun Chinese Physics B 20 (7), 077303, 2011 | 6 | 2011 |
| Ni diffusion and its influence on electrical properties of AlxGa1− xN∕ GaN heterostructures S Huang, B Shen, F Lin, N Ma, FJ Xu, ZL Miao, J Song, L Lu, F Liu, ... Applied Physics Letters 93 (17), 2008 | 5 | 2008 |
| Electron transport in 2D crystal semiconductors and their device applications D Jena, M Li, N Ma, WS Hwang, D Esseni, A Seabaugh, HG Xing 2014 Silicon Nanoelectronics Workshop (SNW), 1-2, 2014 | 4 | 2014 |
| Performance comparison of Pt/Au and Ni/Au Schottky contacts on AlxGa1− x N/GaN heterostructures at high temperatures F Lin, B Shen, LW Lu, N Ma, FJ Xu, ZL Miao, J Song, XY Liu, K Wei, ... Chinese Physics B 19 (12), 127304, 2010 | 3 | 2010 |
Debdeep JenaCornell UniversityEmail verificata su cornell.edu