| Characterization of ultra-thin oxides using electrical CV and IV measurements JR Hauser, K Ahmed AIP Conference Proceedings 449 (1), 235-239, 1998 | 478 | 1998 |
| Characterization of two‐dimensional dopant profiles: Status and review AC Diebold, MR Kump, JJ Kopanski, DG Seiler Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1996 | 119 | 1996 |
| Overview of scatterometry applications in high volume silicon manufacturing C Raymond AIP Conference Proceedings 788 (1), 394-402, 2005 | 117 | 2005 |
| Temperature dependence of the energy gap of InSb using nonlinear optical techniques CL Littler, DG Seiler Applied Physics Letters 46 (10), 986-988, 1985 | 115 | 1985 |
| Multicarrier characterization method for extracting mobilities and carrier densities of semiconductors from variable magnetic field measurements JS Kim, DG Seiler, WF Tseng Journal of applied physics 73 (12), 8324-8335, 1993 | 110 | 1993 |
| COCOS (corona oxide characterization of semiconductor) non-contact metrology for gate dielectrics M Wilson, J Lagowski, L Jastrzebski, A Savtchouk, V Faifer AIP Conference Proceedings 550 (1), 220-225, 2001 | 102 | 2001 |
| Novel Techniques for data retention and Leff measurements in two bit MicroFlash® Memory Cells Y Roizin, A Yankelevich, Y Netzer AIP Conference Proceedings 550 (1), 181-185, 2001 | 100 | 2001 |
| Inversion-asymmetry splitting of the conduction band in InSb DG Seiler, BD Bajaj, AE Stephens Physical Review B 16 (6), 2822, 1977 | 94 | 1977 |
| An introduction to the helium ion microscope J Notte, B Ward, N Economou, R Hill, R Percival, L Farkas, S McVey AIP Conference proceedings 931 (1), 489-496, 2007 | 91 | 2007 |
| Wafer inspection technology challenges for ULSI manufacturing S Stokowski, M Vaez-Iravani AIP conference proceedings, 405-418, 1998 | 89 | 1998 |
| Nonlinear oscillations and chaos in n-InSb DG Seiler, CL Littler, RJ Justice, PW Milonni Physics Letters A 108 (9), 462-464, 1985 | 79 | 1985 |
| Intrinsic carrier concentration of narrow‐gap mercury cadmium telluride based on the nonlinear temperature dependence of the band gap JR Lowney, DG Seiler, CL Littler, IT Yoon Journal of applied physics 71 (3), 1253-1258, 1992 | 76 | 1992 |
| Temperature and composition dependence of the energy gap of Hg1−xCdxTe by two‐photon magnetoabsorption techniques DG Seiler, JR Lowney, CL Littler, MR Loloee Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 8 (2 …, 1990 | 75 | 1990 |
| Molecular beam epitaxy growth and structure of self-assembled Bi2Se3/Bi2MnSe4 multilayer heterostructures JA Hagmann, X Li, S Chowdhury, SN Dong, S Rouvimov, ... New Journal of Physics 19 (8), 085002, 2017 | 73 | 2017 |
| Metrology and Diagnostic Techniques for Nanoelectronics Z Ma, DG Seiler Jenny Stanford Publishing, 2017 | 71 | 2017 |
| Band structure of HgSe: Band parameter determinations from effective-mass data, and concentration dependence and anisotropy of beating effects in the Shubnikov-de Haas oscillations DG Seiler, RR Galazka, WM Becker Physical Review B 3 (12), 4274, 1971 | 62 | 1971 |
| Optical properties of semiconductors PM Amirtharaj, DG Seiler Handbook of optics 2, 36.1-36.96, 1995 | 61 | 1995 |
| Optical topography measurement of patterned wafers X Colonna de Lega, P De Groot AIP conference proceedings 788 (1), 432-436, 2005 | 58 | 2005 |
| Characterization of molecular‐beam epitaxially grown HgTe films by Shubnikov–de Haas measurements RJ Justice, DG Seiler, W Zawadzki, RJ Koestner, MW Goodwin, MA Kinch Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 6 (4 …, 1988 | 58 | 1988 |
| Inversion-asymmetry splitting of the conduction band in GaSb from Shubnikov-de Haas measurements DG Seiler, WM Becker, LM Roth Physical Review B 1 (2), 764, 1970 | 58 | 1970 |
