| Physical origin of the resistance drift exponent in amorphous phase change materials M Boniardi, D Ielmini Applied Physics Letters 98 (24), 2011 | 160 | 2011 |
| Statistics of resistance drift due to structural relaxation in phase-change memory arrays M Boniardi, D Ielmini, S Lavizzari, AL Lacaita, A Redaelli, A Pirovano IEEE Transactions on Electron Devices 57 (10), 2690-2696, 2010 | 116 | 2010 |
| A physics-based model of electrical conduction decrease with time in amorphous Ge2Sb2Te5 M Boniardi, A Redaelli, A Pirovano, I Tortorelli, D Ielmini, F Pellizzer Journal of Applied Physics 105 (8), 2009 | 101 | 2009 |
| Bipolar switching in chalcogenide phase change memory N Ciocchini, M Laudato, M Boniardi, E Varesi, P Fantini, AL Lacaita, ... Scientific reports 6 (1), 29162, 2016 | 83 | 2016 |
| Optimization metrics for phase change memory (PCM) cell architectures M Boniardi, A Redaelli, C Cupeta, F Pellizzer, L Crespi, G D'Arrigo, ... 2014 IEEE International Electron Devices Meeting, 29.1. 1-29.1. 4, 2014 | 69 | 2014 |
| Evidence for Thermal‐Based Transition in Super‐Lattice Phase Change Memory M Boniardi, JE Boschker, J Momand, BJ Kooi, A Redaelli, R Calarco physica status solidi (RRL) - Rapid Research Letters, 2019 | 64 | 2019 |
| Common signature of many-body thermal excitation in structural relaxation and crystallization of chalcogenide glasses D Ielmini, M Boniardi Applied Physics Letters 94 (9), 2009 | 55 | 2009 |
| Unified mechanisms for structural relaxation and crystallization in phase-change memory devices D Ielmini, M Boniardi, AL Lacaita, A Redaelli, A Pirovano Microelectronic Engineering 86 (7-9), 1942-1945, 2009 | 52 | 2009 |
| Thermally optimized phase change memory cells and methods of fabricating the same M Boniardi, A Redaelli US Patent 9,153,777, 2015 | 40 | 2015 |
| Impact of Ge–Sb–Te compound engineering on the set operation performance in phase-change memories M Boniardi, D Ielmini, I Tortorelli, A Redaelli, A Pirovano, M Allegra, ... Solid-state electronics 58 (1), 11-16, 2011 | 35 | 2011 |
| Interface Engineering for Thermal Disturb Immune Phase Change Memory Technology A Redaelli, M Boniardi, A Ghetti, U Russo, C Cupeta, S Lavizzari, ... 2013 IEEE International Electron Devices Meeting (IEDM), 30.4. 1-30.4. 4, 2013 | 30 | 2013 |
| Modeling of atomic migration phenomena in phase change memory devices L Crespi, A Lacaita, M Boniardi, E Varesi, A Ghetti, A Redaelli, G D'Arrigo 2015 IEEE International Memory Workshop (IMW), 1-4, 2015 | 26 | 2015 |
| Electrical conductivity discontinuity at melt in phase change memory L Crespi, A Ghetti, M Boniardi, AL Lacaita IEEE electron device letters 35 (7), 747-749, 2014 | 26 | 2014 |
| Statistical and scaling behavior of structural relaxation effects in phase-change memory (PCM) devices M Boniardi, D Ielmini, S Lavizzari, AL Lacaita, A Redaelli, A Pirovano 2009 IEEE International Reliability Physics Symposium, 122-127, 2009 | 26 | 2009 |
| Internal temperature extraction in phase-change memory cells during the reset operation M Boniardi, A Redaelli, I Tortorelli, F Pellizzer, A Pirovano IEEE electron device letters 33 (4), 594-596, 2012 | 25 | 2012 |
| Electrical performance of phase change memory cells with Ge3Sb2Te6 deposited by molecular beam epitaxy JE Boschker, M Boniardi, A Redaelli, H Riechert, R Calarco Applied Physics Letters 106 (2), 2015 | 23 | 2015 |
| Memory arrays and methods of forming memory arrays M Boniardi, A Redaelli US Patent 9,312,481, 2016 | 18 | 2016 |
| Phase Change Memory: Device scaling and challenges for material engineering in the GeSbTe compound system M Boniardi, A Redaelli Microelectronic Engineering 137, 1-4, 2015 | 16 | 2015 |
| Electrical and thermal behavior of Tellurium poor GeSbTe compounds for phase change memory M Boniardi, A Redaelli, I Tortorelli, S Lavizzari, A Pirovano, F Pellizzer, ... 2012 4th IEEE International Memory Workshop, 1-3, 2012 | 15 | 2012 |
| Impact of material composition on the write performance of phase-change memory devices M Boniardi, D Ielmini, AL Lacaita, A Redaelli, A Pirovano, I Tortorelli, ... 2010 IEEE International Memory Workshop, 1-4, 2010 | 14 | 2010 |
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