| Nanowire transistors without junctions JP Colinge, CW Lee, A Afzalian, ND Akhavan, R Yan, I Ferain, P Razavi, ... Nature nanotechnology 5 (3), 225-229, 2010 | 2895 | 2010 |
| Junctionless multigate field-effect transistor CW Lee, A Afzalian, ND Akhavan, R Yan, I Ferain, JP Colinge Applied Physics Letters 94 (5), 2009 | 1367 | 2009 |
| Performance estimation of junctionless multigate transistors CW Lee, I Ferain, A Afzalian, R Yan, ND Akhavan, P Razavi, JP Colinge Solid-State Electronics 54 (2), 97-103, 2010 | 649 | 2010 |
| High-temperature performance of silicon junctionless MOSFETs CW Lee, A Borne, I Ferain, A Afzalian, R Yan, ND Akhavan, P Razavi, ... IEEE transactions on electron devices 57 (3), 620-625, 2010 | 448 | 2010 |
| SOI gated resistor: CMOS without junctions JP Colinge, CW Lee, A Afzalian, N Dehdashti, R Yan, I Ferain, P Razavi, ... 2009 IEEE International SOI Conference, 1-2, 2009 | 189 | 2009 |
| Physical modeling and design of thin-film SOI lateral PIN photodiodes A Afzalian, D Flandre IEEE Transactions on Electron Devices 52 (6), 1116-1122, 2005 | 96 | 2005 |
| Ab initio perspective of ultra-scaled CMOS from 2D-material fundamentals to dynamically doped transistors A Afzalian npj 2D Materials and Applications 5 (1), 5, 2021 | 61 | 2021 |
| Vertical gate-all-around nanowire GaSb-InAs core-shell n-type tunnel FETs T Vasen, P Ramvall, A Afzalian, G Doornbos, M Holland, C Thelander, ... Scientific reports 9 (1), 202, 2019 | 55 | 2019 |
| Wafer-scale integration of double gated WS2-transistors in 300mm Si CMOS fab I Asselberghs, Q Smets, T Schram, B Groven, D Verreck, A Afzalian, ... 2020 IEEE International Electron Devices Meeting (IEDM), 40.2. 1-40.2. 4, 2020 | 53 | 2020 |
| Signal-to-noise ratio optimization for detecting bacteria with interdigitated microelectrodes N Couniot, D Flandre, LA Francis, A Afzalian Sensors and Actuators B: Chemical 189, 43-51, 2013 | 53 | 2013 |
| Introducing 2D-FETs in device scaling roadmap using DTCO Z Ahmed, A Afzalian, T Schram, D Jang, D Verreck, Q Smets, ... 2020 IEEE International Electron Devices Meeting (IEDM), 22.5. 1-22.5. 4, 2020 | 49 | 2020 |
| Ge CMOS gate stack and contact development for vertically stacked lateral nanowire FETs MJH Van Dal, G Vellianitis, G Doornbos, B Duriez, MC Holland, T Vasen, ... 2018 IEEE International Electron Devices Meeting (IEDM), 21.1. 1-21.1. 4, 2018 | 47 | 2018 |
| Capacitive biosensing of bacterial cells: Analytical model and numerical simulations N Couniot, A Afzalian, N Van Overstraeten-Schlögel, LA Francis, ... Sensors and Actuators B: Chemical 211, 428-438, 2015 | 46 | 2015 |
| Sensitivity of trigate MOSFETs to random dopant induced threshold voltage fluctuations R Yan, D Lynch, T Cayron, D Lederer, A Afzalian, CW Lee, N Dehdashti, ... Solid-State Electronics 52 (12), 1872-1876, 2008 | 42 | 2008 |
| Advanced DFT–NEGF transport techniques for novel 2-D material and device exploration including HfS 2/WSe 2 van der waals heterojunction TFET and WTe 2/WS 2 metal/semiconductor … A Afzalian, E Akhoundi, G Gaddemane, R Duflou, M Houssa IEEE Transactions on Electron Devices 68 (11), 5372-5379, 2021 | 40 | 2021 |
| A new F (ast)-CMS NEGF algorithm for efficient 3D simulations of switching characteristics enhancement in constricted tunnel barrier silicon nanowire MuGFETs A Afzalian, ND Akhavan, CW Lee, R Yan, I Ferain, P Razavi, JP Colinge Journal of Computational Electronics 8, 287-306, 2009 | 40 | 2009 |
| Control of interlayer physics in 2H transition metal dichalcogenides KC Wang, TK Stanev, D Valencia, J Charles, A Henning, VK Sangwan, ... Journal of applied physics 122 (22), 2017 | 38 | 2017 |
| Ultra-scaled Z-RAM cell S Okhonin, M Nagoga, CW Lee, JP Colinge, A Afzalian, R Yan, ... 2008 IEEE International SOI Conference, 157-158, 2008 | 37 | 2008 |
| Computationally efficient self-consistent born approximation treatments of phonon scattering for coupled-mode space non-equilibrium Green’s function A Afzalian Journal of Applied Physics 110 (9), 2011 | 35 | 2011 |
| Ge n-channel FinFET with optimized gate stack and contacts MJH Van Dal, B Duriez, G Vellianitis, G Doornbos, R Oxland, M Holland, ... 2014 IEEE International Electron Devices Meeting, 9.5. 1-9.5. 4, 2014 | 34 | 2014 |
