עקוב אחר
Mingtao Hu
Mingtao Hu
כתובת אימייל מאומתת בדומיין umich.edu
כותרת
צוטט על ידי
צוטט על ידי
שנה
Dawn of nitride ferroelectric semiconductors: from materials to devices
P Wang, D Wang, S Mondal, M Hu, J Liu, Z Mi
Semiconductor Science and Technology 38 (4), 043002, 2023
642023
Thickness scaling down to 5 nm of ferroelectric ScAlN on CMOS compatible molybdenum grown by molecular beam epitaxy
D Wang, P Wang, S Mondal, M Hu, D Wang, Y Wu, T Ma, Z Mi
Applied Physics Letters 122 (5), 2023
542023
Ultrathin Nitride Ferroic Memory with Large ON/OFF Ratios for Analog In‐Memory Computing
D Wang, P Wang, S Mondal, M Hu, Y Wu, T Ma, Z Mi
Advanced Materials 35 (20), 2210628, 2023
492023
Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT
D Wang, P Wang, M He, J Liu, S Mondal, M Hu, D Wang, Y Wu, T Ma, Z Mi
Applied Physics Letters 122 (9), 2023
482023
Ferroelectric YAlN grown by molecular beam epitaxy
D Wang, S Mondal, J Liu, M Hu, P Wang, S Yang, D Wang, Y Xiao, Y Wu, ...
Applied Physics Letters 123 (3), 2023
382023
Impact of dislocation density on the ferroelectric properties of ScAlN grown by molecular beam epitaxy
D Wang, P Wang, S Mondal, Y Xiao, M Hu, Z Mi
Applied Physics Letters 121 (4), 2022
352022
Ferroelectric Nitride Heterostructures on CMOS Compatible Molybdenum for Synaptic Memristors
P Wang, D Wang, S Mondal, M Hu, Y Wu, T Ma, Z Mi
ACS Applied Materials & Interfaces 15 (14), 18022-18031, 2023
272023
Reconfigurable self-powered deep UV photodetectors based on ultrawide bandgap ferroelectric ScAlN
S Mondal, D Wang, P Wang, Y Wu, M Hu, Y Xiao, S Mohanty, T Ma, ...
APL Materials 10 (12), 2022
172022
On the surface oxidation and band alignment of ferroelectric Sc0. 18Al0. 82N/GaN heterostructures
D Wang, D Wang, P Zhou, M Hu, J Liu, S Mondal, T Ma, P Wang, Z Mi
Applied Surface Science 628, 157337, 2023
162023
Band alignment and charge carrier transport properties of YAlN/III-nitride heterostructures
D Wang, S Mondal, P Kezer, M Hu, J Liu, Y Wu, P Zhou, T Ma, P Wang, ...
Applied Surface Science 637, 157893, 2023
102023
Controlled ferroelectric switching in ultrawide bandgap AlN/ScAlN multilayers
D Wang, P Wang, S Mondal, J Liu, M Hu, M He, S Nam, W Peng, S Yang, ...
Applied Physics Letters 123 (10), 2023
92023
ScAlN-Based ITO Channel Ferroelectric Field-Effect Transistors With Large Memory Window
S Mondal, D Wang, M Hu, J Liu, M He, P Wang, Z Mi
IEEE Transactions on Electron Devices 70 (9), 4618-4621, 2023
92023
Tunable bandgap and Si-doping in N-polar AlGaN on C-face 4H-SiC via molecular beam epitaxy
S Mondal, D Wang, AFM Anhar Uddin Bhuiyan, M Hu, M Reddeppa, ...
Applied Physics Letters 123 (18), 2023
72023
Heteroepitaxy of N-polar AlN on C-face 4H-SiC: Structural and optical properties
M Hu, P Wang, D Wang, Y Wu, S Mondal, D Wang, E Ahmadi, T Ma, Z Mi
APL Materials 11 (12), 2023
52023
Electric-Field-Induced Domain Walls in Wurtzite Ferroelectrics
D Wang, D Wang, M Molla, Y Liu, S Yang, M Hu, J Liu, Y Wu, T Ma, ...
arXiv preprint arXiv:2312.08645, 2023
12023
Fully Epitaxial, Reconfigurable Ferroelectric ScAlN/AlGaN/GaN HEMTs
D Wang, P Wang, M He, J Liu, S Mondal, M Hu, D Wang, Y Wu, T Ma, Z Mi
2023 Device Research Conference (DRC), 1-2, 2023
12023
Van der Waals quantum dots on layered hexagonal boron nitride
Y Wu, Y Xiao, Y Zhao, Y Shen, K Sun, B Wang, P Wang, D Wang, P Zhou, ...
Proceedings of the National Academy of Sciences 122 (9), e2417859122, 2025
2025
Nanoscale Engineering of Wurtzite Ferroelectrics: Unveiling Phase Transition and Ferroelectric Switching in ScAlN Nanowires
D Wang, P Wang, S Mondal, M Hu, Y Wu, D Wang, K Sun, Z Mi
ACS Applied Nano Materials 7 (23), 26756-26764, 2024
2024
Three-dimensional module with integrated passive components
Guobiao Zhang, Hongyu Yu, Yuejin Guo, Shengming Zhou, Guoxing Zhang ...
US Patent 11217542 B2, 2022
2022
Multi-Bit-Per-Cell Three-Dimensional Resistive Random Access Memory
Guobiao Zhang, Yida Li, Xiaodong Xiang, Hongyu Yu, Yuejin Guo, Shengming ...
US Patent 11170,863 B2, 2021
2021
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מאמרים 1–20