| Fabrication of InAs composite channel high electron mobility transistors by utilizing Ne-based atomic layer etching TW Kim, JI Song, JH Jang, DH Kim, SD Park, JW Bae, GY Yeom Applied physics letters 91 (10), 2007 | 846 | 2007 |
| Advanced gate technologies for state-of-the-art fT in AlGaN/GaN HEMTs JW Chung, TW Kim, T Palacios 2010 International Electron Devices Meeting, 30.2. 1-30.2. 4, 2010 | 74 | 2010 |
| Characterization of Al Incorporation into HfO2 Dielectric by Atomic Layer Deposition MM Rahman, JG Kim, DH Kim, TW Kim Micromachines 10 (6), 361, 2019 | 69 | 2019 |
| InGaAs MOSFETs for CMOS: Recent advances in process technology JA Del Alamo, D Antoniadis, A Guo, DH Kim, TW Kim, J Lin, W Lu, A Vardi, ... 2013 IEEE International Electron Devices Meeting, 2.1. 1-2.1. 4, 2013 | 61 | 2013 |
| Quantum capacitance in scaled down III–V FETs D Jin, D Kim, T Kim, JA Del Alamo 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 56 | 2009 |
| Positive bias instability and recovery in InGaAs channel nMOSFETs S Deora, G Bersuker, WY Loh, D Veksler, K Matthews, TW Kim, RTP Lee, ... IEEE Transactions on Device and Materials Reliability 13 (4), 507-514, 2013 | 54 | 2013 |
| Lg= 25 nm InGaAs/InAlAs high-electron mobility transistors with both fT and fmax in excess of 700 GHz HB Jo, DY Yun, JM Baek, JH Lee, TW Kim, DH Kim, T Tsutsumi, ... Applied Physics Express 12 (5), 054006, 2019 | 53 | 2019 |
| A self-aligned InGaAs quantum-well metal–oxide–semiconductor field-effect transistor fabricated through a lift-off-free front-end process J Lin, TW Kim, DA Antoniadis, JA del Alamo Applied Physics Express 5 (6), 064002, 2012 | 49 | 2012 |
| Sub-100 nm InGaAs quantum-well (QW) tri-gate MOSFETs with Al2O3/HfO2 (EOT < 1 nm) for low-power logic applications TW Kim, DH Kim, DH Koh, HM Kwon, RH Baek, D Veksler, C Huffman, ... 2013 IEEE International Electron Devices Meeting, 16.3. 1-16.3. 4, 2013 | 42 | 2013 |
| 60 nm self-aligned-gate InGaAs HEMTs with record high-frequency characteristics TW Kim, DH Kim, JA Del Alamo 2010 International Electron Devices Meeting, 30.7. 1-30.7. 4, 2010 | 42 | 2010 |
| ETB-QW InAs MOSFET with scaled body for improved electrostatics TW Kim, DH Kim, DH Koh, RJW Hill, RTP Lee, MH Wong, T Cunningham, ... 2012 International Electron Devices Meeting, 32.3. 1-32.3. 4, 2012 | 40 | 2012 |
| nm InAlAs/InGaAs High-Electron- Mobility Transistors With a g m_max of 3 S/mm and of 559 GHz HB Jo, JM Baek, DY Yun, SW Son, JH Lee, TW Kim, DH Kim, T Tsutsumi, ... IEEE Electron Device Letters 39 (11), 1640-1643, 2018 | 38 | 2018 |
| L -nm Trigate Quantum-Well In0.53Ga0.47As Metal–Oxide–Semiconductor Field-Effect Transistors With Al2O3/HfO2 Gate-Stack TW Kim, DH Koh, CS Shin, WK Park, T Orzali, C Hobbs, WP Maszara, ... IEEE Electron Device Letters 36 (3), 223-225, 2015 | 36 | 2015 |
| InAs quantum-well MOSFET (Lg = 100 nm) with record high gm, fT and fmax TW Kim, RJW Hill, CD Young, D Veksler, L Morassi, S Oktybrshky, J Oh, ... 2012 Symposium on VLSI Technology (VLSIT), 179-180, 2012 | 36 | 2012 |
| Lg= 60 nm recessed In0. 7Ga0. 3As metal-oxide-semiconductor field-effect transistors with Al2O3 insulator DH Kim, JA del Alamo, DA Antoniadis, J Li, JM Kuo, P Pinsukanjana, ... Applied Physics Letters 101 (22), 2012 | 33 | 2012 |
| Logic characteristics of 40 nm thin-channel InAs HEMTs TW Kim, DH Kim, JA Del Alamo 2010 22nd International Conference on Indium Phosphide and Related Materials …, 2010 | 32 | 2010 |
| Impact of the source-to-drain spacing on the DC and RF characteristics of InGaAs/InAlAs high-electron mobility transistors DY Yun, HB Jo, SW Son, JM Baek, JH Lee, TW Kim, DH Kim, T Tsutsumi, ... IEEE Electron Device Letters 39 (12), 1844-1847, 2018 | 30 | 2018 |
| Evaluation of the anti-obesity activity of Platycodon grandiflorum root and Curcuma longa root fermented with Aspergillus oryzae YH Kang, KK Kim, TW Kim, CS Yang, M Choe Korean Journal of Food Science and Technology 47 (1), 111-118, 2015 | 30 | 2015 |
| High-performance III–V devices for future logic applications DH Kim, TW Kim, RH Baek, PD Kirsch, W Maszara, JA Del Alamo, ... 2014 IEEE International Electron Devices Meeting, 25.2. 1-25.2. 4, 2014 | 30 | 2014 |
| Antioxidant and whitening effects of Agrimonia pilosa Ledeb water extract TH Kim, JM Kim, JM Baek, TW Kim, DJ Kim, JH Park, M Choe Korean Journal of Medicinal Crop Science 19 (3), 177-184, 2011 | 30 | 2011 |
Dae-Hyun KIMAssociate Professor, College of IT Engineering, School of Electronics Engineering, Semiconductorכתובת אימייל מאומתת בדומיין ee.knu.ac.kr