| Wide bandgap semiconductor-based integrated circuits S Yuvaraja, V Khandelwal, X Tang, X Li Chip 2 (4), 100072, 2023 | 49 | 2023 |
| A self-powered and broadband UV PIN photodiode employing a NiOx layer and a β-Ga2O3 heterojunction JMT Vasquez, A Ashai, Y Lu, V Khandelwal, M Rajbhar, M Kumar, X Li, ... Journal of Physics D: Applied Physics 56 (6), 065104, 2023 | 23 | 2023 |
| A machine learning study on superlattice electron blocking layer design for AlGaN deep ultraviolet light-emitting diodes using the stacked XGBoost/LightGBM algorithm R Lin, Z Liu, P Han, R Lin, Y Lu, H Cao, X Tang, C Wang, V Khandelwal, ... Journal of Materials Chemistry C 10 (46), 17602-17610, 2022 | 20 | 2022 |
| Origin of interfacial charges of Al2O3/Si and Al2O3/GaN heterogeneous heterostructures C Wang, F AlQatari, V Khandelwal, R Lin, X Li Applied Surface Science 608, 155099, 2023 | 17 | 2023 |
| Band alignment of orthorhombic Ga2O3 with GaN and AlN semiconductors S Krishna, Y Lu, CH Liao, V Khandelwal, X Li Applied Surface Science 599, 153901, 2022 | 17 | 2022 |
| Ti3C2Tx MXene van der Waals Gate Contact for GaN High Electron Mobility Transistors C Wang, X Xu, S Tyagi, PC Rout, U Schwingenschlögl, B Sarkar, ... Advanced Materials 35 (22), 2211738, 2023 | 15 | 2023 |
| Monolithic β-Ga2O3 NMOS IC based on heteroepitaxial E-mode MOSFETs V Khandelwal, S Yuvaraja, GIM García, C Wang, Y Lu, F AlQatari, X Li Applied Physics Letters 122 (14), 2023 | 14 | 2023 |
| β-Ga2O3 Pseudo-CMOS Monolithic Inverters D Chettri, G Mainali, C Amruth, V Khandelwal, S Yuvaraja, N Xiao, X Tang, ... IEEE Transactions on Electron Devices 70 (10), 5051-5056, 2023 | 8 | 2023 |
| Enhancement-mode Ambipolar Thin-film Transistors and CMOS Logic Circuits using Bilayer Ga2O3/NiO Semiconductors Y Saravanan, K Vishal, K Shibin, L Yi, L Zhiyuan, K Mritunjay, T Xiao, ... | 7* | |
| Demonstration of β-Ga2O3 nonvolatile flash memory for oxide electronics V Khandelwal, M Rajbhar, GIM Garcia, T Tang, B Sarkar, X Li Japanese Journal of Applied Physics, 2023 | 3 | 2023 |
| In Situ Growth of (−201) Fiber‐Textured β‐Ga2O3 Semiconductor Tape for Flexible Thin‐Film Transistor X Tang, Y Zhao, KH Li, C Liu, H Faber, W Babatain, CH Liao, S Yuvaraja, ... Advanced Electronic Materials 11 (1), 2400046, 2025 | 2 | 2025 |
| Pseudo-source gated beta-gallium oxide MOSFET G Mainali, D Chettri, V Khandelwal, M Kumar, GIM García, Z Liu, N Xiao, ... Applied Physics Letters 125 (14), 2024 | 1 | 2024 |
| Integration of low-thermal-budget In2O3 NMOS inverter and GaN HEMT for power electronics M Kumar, S Yuvaraja, N Xiao, MK Rajbhar, G Mainali, V Khandelwal, ... Applied Physics Letters 124 (11), 2024 | 1 | 2024 |
| κ/β‐Ga2O3 Type‐II Phase Heterojunction Y Lu, PA Miranda Cortez, X Tang, Z Liu, V Khandelwal, S Krishna, X Li Advanced Materials, 2406902, 2025 | | 2025 |
| Band alignment characterizations of grafted GaAs/(2¯ 01) Ga2O3 heterojunction via x-ray photoelectron spectroscopy Y Lu, J Zhou, V Khandelwal, C Adamo, P Marshall, J Gong, Y Liu, TK Ng, ... Journal of Applied Physics 136 (24), 2024 | | 2024 |
| Demonstration of normally OFF beta-gallium oxide monolithic bidirectional switch for AC switching applications D Chettri, G Mainali, JH Salcedo, M Kumar, V Khandelwal, S Yuvaraja, ... Applied Physics Letters 125 (20), 2024 | | 2024 |
| High-temperature operation of Al2O3/Ga2O3 bi-layer gate stack GaN MOS-HEMT up to 450° C with suppressed gate leakage M Kumar, V Khandelwal, S Yuvaraja, D Chettri, H Cao, G Mainali, X Tang, ... Japanese Journal of Applied Physics 63 (10), 100905, 2024 | | 2024 |
| Optimization of Growth Temperature and V/III Ratio toward High-Quality Si-Doped Aluminum Nitride Thin Films on Sapphire H Cao, M Nong, X Tang, C Liao, GI Maciel Garcia, V Khandelwal, Y Wu, ... Crystal Growth & Design 24 (19), 7871-7877, 2024 | | 2024 |
| Field management in NiO x/β-Ga2O3 merged-PIN Schottky diodes: simulation studies and experimental validation JMT Vasquez, A Mukherjee, S Singh, V Khandelwal, S Yuvaraja, ... Journal of Physics D: Applied Physics 57 (44), 445105, 2024 | | 2024 |
| Passivated indium oxide thin-film transistors with high field-effect mobility (128.3 cm2 V− 1 s− 1) and low thermal budget (200° C) N Xiao, V Khandelwal, S Yuvaraja, D Chettri, G Mainali, Z Liu, ... Journal of Physics D: Applied Physics 57 (44), 445104, 2024 | | 2024 |
Xiaohang LiAssociate Professor, Advanced Semiconductor Lab, ECE, CEMSEכתובת אימייל מאומתת בדומיין kaust.edu.sa
