| Coexistence of grain‐boundaries‐assisted bipolar and threshold resistive switching in multilayer hexagonal boron nitride C Pan, Y Ji, N Xiao, F Hui, K Tang, Y Guo, X Xie, FM Puglisi, L Larcher, ... Advanced functional materials 27 (10), 1604811, 2017 | 343 | 2017 |
| Resistive Random Access Memory Cells with a Bilayer TiO2/SiOX Insulating Stack for Simultaneous Filamentary and Distributed Resistive Switching N Xiao, MA Villena, B Yuan, S Chen, B Wang, M Eliáš, Y Shi, F Hui, X Jing, ... Advanced Functional Materials 27 (33), 1700384, 2017 | 84 | 2017 |
| 2D h-BN based RRAM devices FM Puglisi, L Larcher, C Pan, N Xiao, Y Shi, F Hui, M Lanza 2016 IEEE International Electron Devices Meeting (IEDM), 34.8. 1-34.8. 4, 2016 | 75 | 2016 |
| Model for multi-filamentary conduction in graphene/hexagonal-boron-nitride/graphene based resistive switching devices C Pan, E Miranda, MA Villena, N Xiao, X Jing, X Xie, T Wu, F Hui, Y Shi, ... 2D Materials 4 (2), 025099, 2017 | 65 | 2017 |
| Ultrasensitive Flexible κ-Phase Ga2O3 Solar-Blind Photodetector Y Lu, S Krishna, X Tang, W Babatain, M Ben Hassine, CH Liao, N Xiao, ... ACS Applied Materials & Interfaces 14 (30), 34844-34854, 2022 | 36 | 2022 |
| High-resolution characterization of hexagonal boron nitride coatings exposed to aqueous and air oxidative environments L Jiang, N Xiao, B Wang, E Grustan-Gutierrez, X Jing, P Babor, M Kolíbal, ... Nano Research 10, 2046-2055, 2017 | 31 | 2017 |
| Flexible self-powered DUV photodetectors with high responsivity utilizing Ga2O3/NiO heterostructure on buffered Hastelloy substrates X Tang, Y Lu, R Lin, CH Liao, Y Zhao, KH Li, N Xiao, H Cao, W Babatain, ... Applied Physics Letters 122 (12), 2023 | 30 | 2023 |
| Chemical solution deposition of epitaxial indium-and aluminum-doped Ga2O3 thin films on sapphire with tunable bandgaps X Tang, KH Li, CH Liao, JMT Vasquez, C Wang, N Xiao, X Li Journal of the European Ceramic Society 42 (1), 175-180, 2022 | 30 | 2022 |
| Effect of the AlN strain compensation layer on InGaN quantum well red-light-emitting diodes beyond epitaxy Z Liu, M Nong, Y Lu, H Cao, S Yuvaraja, N Xiao, Z Alnakhli, ... Optics Letters 47 (23), 6229-6232, 2022 | 15 | 2022 |
| Transferable Ga2O3 Membrane for Vertical and Flexible Electronics via One-Step Exfoliation Y Lu, S Krishna, CH Liao, Z Yang, M Kumar, Z Liu, X Tang, N Xiao, ... ACS Applied Materials & Interfaces 14 (42), 47922-47930, 2022 | 15 | 2022 |
| Epitaxial growth of β-Ga 2 O 3 (− 201) thin film on four-fold symmetry CeO 2 (001) substrate for heterogeneous integrations X Tang, KH Li, CH Liao, D Zheng, C Liu, R Lin, N Xiao, S Krishna, ... Journal of Materials Chemistry C 9 (44), 15868-15876, 2021 | 14 | 2021 |
| Experimental observation and mitigation of dielectric screening in hexagonal boron nitride based resistive switching devices B Wang, N Xiao, C Pan, Y Shi, F Hui, X Jing, K Zhu, B Guo, MA Villena, ... Crystal Research and Technology 53 (4), 1800006, 2018 | 13 | 2018 |
| Three-dimensional integrated metal-oxide transistors S Yuvaraja, H Faber, M Kumar, N Xiao, GI Maciel García, X Tang, ... Nature Electronics 7 (9), 768-776, 2024 | 11 | 2024 |
| Etching-free pixel definition in InGaN green micro-LEDs Z Liu, Y Lu, H Cao, GI Maciel Garcia, T Liu, X Tang, N Xiao, ... Light: Science & Applications 13 (1), 117, 2024 | 9 | 2024 |
| β-Ga2O3 Pseudo-CMOS Monolithic Inverters D Chettri, G Mainali, C Amruth, V Khandelwal, S Yuvaraja, N Xiao, X Tang, ... IEEE Transactions on Electron Devices 70 (10), 5051-5056, 2023 | 8 | 2023 |
| The influence of annealing atmosphere on sputtered indium oxide thin-film transistors N Xiao, S Yuvaraja, D Chettri, Z Liu, Y Lu, C Liao, X Tang, X Li Journal of Physics D: Applied Physics 56 (42), 425102, 2023 | 8 | 2023 |
| Equivalent circuit model for the electron transport in 2D resistive switching material systems E Miranda, J Suñé, C Pan, M Villena, N Xiao, M Lanza 2017 47th European Solid-State Device Research Conference (ESSDERC), 86-89, 2017 | 7 | 2017 |
| Significant improvement of n-contact performance and wall plug efficiency of AlGaN-based deep ultraviolet light-emitting diodes by atomic layer etching Z Liu, T Liu, H Cao, Z Jiang, N Xiao, GIM Garcia, Y Lu, X Tang, X Li Optics Letters 49 (16), 4533-4536, 2024 | 3 | 2024 |
| Monolithic n‐type metal–oxide–semiconductor inverter integrated circuits based on wide and ultrawide bandgap semiconductors D Chettri, G Mainali, N Xiao, X Tang, X Li physica status solidi (b) 261 (7), 2300493, 2024 | 3 | 2024 |
| Pseudo-source gated beta-gallium oxide MOSFET G Mainali, D Chettri, V Khandelwal, M Kumar, GIM García, Z Liu, N Xiao, ... Applied Physics Letters 125 (14), 2024 | 1 | 2024 |