| A comprehensive review of ZnO materials and devices Ü Özgür, YI Alivov, C Liu, A Teke, MA Reshchikov, S Doğan, V Avrutin, ... Journal of applied physics 98 (4), 2005 | 13443 | 2005 |
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| Comparison of the transport properties of high quality AlGaN/AlN/GaN and AlInN/AlN/GaN two-dimensional electron gas heterostructures R Tülek, A Ilgaz, S Gökden, A Teke, MK Öztürk, M Kasap, S Özçelik, ... Journal of Applied Physics 105 (1), 2009 | 122 | 2009 |
| GaN epitaxy on thermally treated c-plane bulk ZnO substrates with O and Zn faces X Gu, MA Reshchikov, A Teke, D Johnstone, H Morkoç, B Nemeth, ... Applied physics letters 84 (13), 2268-2270, 2004 | 102 | 2004 |
| The effect of AlN interlayer thicknesses on scattering processes in lattice-matched AlInN/GaN two-dimensional electron gas heterostructures A Teke, S Gökden, R Tülek, JH Leach, Q Fan, J Xie, Ü Özgür, H Morkoç, ... New Journal of Physics 11 (6), 063031, 2009 | 93 | 2009 |
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| Mobility limiting scattering mechanisms in nitride-based two-dimensional heterostructures with the InGaN channel S Gökden, R Tülek, A Teke, JH Leach, Q Fan, J Xie, Ü Özgür, H Morkoç, ... Semiconductor science and technology 25 (4), 045024, 2010 | 41 | 2010 |
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| GaN/AlGaN back-illuminated multiple-quantum-well Schottky barrier ultraviolet photodetectors A Teke, S Dogan, F Yun, MA Reshchikov, H Le, XQ Liu, H Morkoc, ... Solid-State Electronics 47 (8), 1401-1408, 2003 | 36 | 2003 |
| Tunable wavelength hot electron light emitter N Balkan, A Teke, R Gupta, A Straw, JH Wolter, W Van Der Vleuten Applied physics letters 67 (7), 935-937, 1995 | 24 | 1995 |
| Synthesis and optical characterization of novel carbazole Schiff bases B Çiçek, Ü Çalışır, M Tavaslı, R Tülek, A Teke Journal of Molecular Structure 1153, 42-47, 2018 | 20 | 2018 |
| The electrical, optical, and structural properties of GaN epitaxial layers grown on Si (111) substrate with SiNx interlayers E Arslan, Ö Duygulu, AA Kaya, A Teke, S Özçelik, E Ozbay Superlattices and Microstructures 46 (6), 846-857, 2009 | 18 | 2009 |
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| In-plane photovoltage and photoluminescence studies in sequentially grown GaInNAs and GaInAs quantum wells S Mazzucato, N Balkan, A Teke, A Erol, RJ Potter, MC Arikan, X Marie, ... Journal of applied physics 93 (5), 2440-2448, 2003 | 15 | 2003 |
| Active region dimensionality and quantum efficiencies of InGaN LEDs from temperature dependent photoluminescence transients N Can, S Okur, M Monavarian, F Zhang, V Avrutin, H Morkoç, A Teke, ... Gallium Nitride Materials and Devices X 9363, 346-355, 2015 | 13 | 2015 |
