| Redefining the speed limit of phase change memory revealed by time-resolved steep threshold-switching dynamics of AgInSbTe devices KD Shukla, N Saxena, S Durai, A Manivannan Scientific Reports 6 (1), 37868, 2016 | 39 | 2016 |
| Impact of thermal boundary resistance on the performance and scaling of phase-change memory device S Durai, S Raj, A Manivannan IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 2019 | 24 | 2019 |
| Multilevel Switching in Phase‐Change Photonic Memory Devices MS Arjunan, S Durai, A Manivannan physica status solidi (RRL)–Rapid Research Letters 15 (11), 2100291, 2021 | 12 | 2021 |
| Realization of 4-Bit Multilevel Optical Switching in Ge2Sb2Te5 and Ag5In5Sb60Te30 Phase-Change Materials Enabled in the Visible Region MS Arjunan, S Durai, A Mondal, KNVD Adarsh, A Manivannan ACS Applied Electronic Materials 2 (12), 3977-3986, 2020 | 10 | 2020 |
| Impact of crystallization process in multilevel optical switching in Ge2Sb2Te5 and Ag5In5Sb60Te30 phase-change materials MS Arjunan, A Mondal, S Durai, KV Adarsh, A Manivannan Journal of Physics D: Applied Physics 53 (49), 495303, 2020 | 10 | 2020 |
| An extremely fast, energy-efficient RESET process in Ge2Sb2Te5 phase change memory device revealed by the choice of electrode materials and interface effects S Durai, S Raj, A Manivannan Semiconductor Science and Technology 35 (1), 015022, 2019 | 5 | 2019 |
| Impact of process-induced variability on the performance and scaling of Ge2Sb2Te5 Phase-change memory device S Durai, S Raj, A Manivannan Semiconductor Science and Technology 35 (3), 035031, 2020 | 4 | 2020 |
| The impact of process variations on input impedance and mitigation using a circuit technique in FinFET-based LNA D Suresh, KK Nagarajan, R Srinivasan Journal of Semiconductors 36 (4), 045002, 2015 | 4 | 2015 |
| Impact of process-induced variability on multi-bit phase change memory devices S Kumari, S Durai, A Manivannan Microelectronics Journal 130, 105638, 2022 | 2 | 2022 |
| Impact of process-induced ellipticity on the RESET process of cylindrical phase change memory devices S Durai, KCC Devi, S Raj, A Manivannan Physica Scripta 97 (12), 125005, 2022 | 1 | 2022 |
| Mitigation of process variation in MOSFET-based narrowband LNA D Suresh, NV Kumar, KK Nagarajan, R Srinivasan International Conference on Information Communication and Embedded Systems …, 2014 | | 2014 |
| Impact of Eccentricity on the Performance of Nanotube Phase‐Change Memory Devices AK Singh, S Durai, S Raj, A Manivannan physica status solidi (RRL)–Rapid Research Letters, 2400424, 0 | | |
