| Steep switching characteristics of single-gated feedback field-effect transistors M Kim, Y Kim, D Lim, S Woo, K Cho, S Kim Nanotechnology 28 (5), 055205, 2016 | 63 | 2016 |
| Static random access memory characteristics of single-gated feedback field-effect transistors J Cho, D Lim, S Woo, K Cho, S Kim IEEE Transactions on Electron Devices 66 (1), 413-419, 2018 | 42 | 2018 |
| Implementation and characterization of an integrate-and-fire neuron circuit using a silicon nanowire feedback field-effect transistor S Woo, J Cho, D Lim, YS Park, K Cho, S Kim IEEE Transactions on Electron Devices 67 (7), 2995-3000, 2020 | 26 | 2020 |
| Covered source–channel tunnel field-effect transistors with trench gate structures S Woo, S Kim IEEE Transactions on Nanotechnology 18, 114-118, 2018 | 22 | 2018 |
| Integrate-and-fire neuron circuit without external bias voltages YS Park, S Woo, D Lim, K Cho, S Kim Frontiers in neuroscience 15, 644604, 2021 | 21 | 2021 |
| Nonvolatile and volatile memory characteristics of a silicon nanowire feedback field-effect transistor with a nitride charge-storage layer H Kang, J Cho, Y Kim, D Lim, S Woo, K Cho, S Kim IEEE Transactions on Electron Devices 66 (8), 3342-3348, 2019 | 21 | 2019 |
| Transposable 3T-SRAM synaptic array using independent double-gate feedback field-effect transistors S Woo, J Cho, D Lim, K Cho, S Kim IEEE Transactions on Electron Devices 66 (11), 4753-4758, 2019 | 19 | 2019 |
| Logic semiconductor device S Kim, K Cho, KIM Minsuk, Y Kim, S Woo, D Lim US Patent 10,483,284, 2019 | 17 | 2019 |
| Switchable‐memory operation of silicon nanowire transistor Y Kim, J Cho, D Lim, S Woo, K Cho, S Kim Advanced Electronic Materials 4 (12), 1800429, 2018 | 16 | 2018 |
| Electrical characteristics of amorphous indium‐tin‐gallium‐zinc‐oxide TFTs under positive gate bias stress D Kim, K Cho, S Woo, S Kim Electronics Letters 56 (2), 102-104, 2020 | 12 | 2020 |
| Device design of single-gated feedback field-effect transistors to achieve latch-up behaviors with high current gains S Woo, S Kim Current Applied Physics 20 (10), 1156-1162, 2020 | 11 | 2020 |
| Logic and memory functions of an inverter comprising reconfigurable double gated feedback field effect transistors J Jeon, S Woo, K Cho, S Kim Scientific reports 12 (1), 12534, 2022 | 9 | 2022 |
| Neural oscillation of single silicon nanowire neuron device with no external bias voltage S Woo, S Kim Scientific Reports, 2022 | 9 | 2022 |
| Performance of ring oscillators composed of gate-all-around FETs with varying numbers of nanowire channels using TCAD simulation S Kim, M Kim, S Woo, H Kang, S Kim Current Applied Physics 18 (3), 340-344, 2018 | 9 | 2018 |
| Impact ionization and tunneling operations in charge-plasma dopingless device M Kim, Y Kim, D Lim, S Woo, K Im, J Cho, H Kang, S Kim Superlattices and Microstructures 111, 796-805, 2017 | 9 | 2017 |
| Solution for Model Parameter Optimization and Prediction of Next-Generation Device DC Characteristics G Gil, S Park, S Woo IEEE Transactions on Electron Devices, 2022 | 6 | 2022 |
| Prediction of Device Characteristics of Feedback Field-Effect Transistors Using TCAD-Augmented Machine Learning S Woo, J Jeon, S Kim Micromachines, 2023 | 5 | 2023 |
| A SPICE model of silicon tunneling field-effect transistors S Woo, M Kim, S Kim Microelectronic Engineering 191, 66-71, 2018 | 4 | 2018 |
| Electrical characteristics of gate-all-around MOSFET ring oscillators using TCAD simulation S Kim, M Kim, S Woo, H Kang, S Kim 2018 International Symposium on VLSI Technology, Systems and Application …, 2018 | 4 | 2018 |
| Suppression of threshold voltage variability in MOSFETs by adjustment of ion implantation parameters JH Park, T Chang, M Kim, S Woo, S Kim Superlattices and Microstructures 113, 169-177, 2018 | 4 | 2018 |
Doohyeok LimAssistant Professor, Department of Electronic Engineering, Kyonggi Universityכתובת אימייל מאומתת בדומיין kyonggi.ac.kr
